TIP 42 Series PNP POWER TRANSISTORS |... COMPLEMENTARY TO THE TIP41 SERIES -6 AMP, 65 WATTS The TIP42 Series power transistors are designed for use in an general purpose amplifier and switching applications. coueetoR Features: BASE 65W at 25C case temperature e 6A continuous collector current CASESTYLETO-220AB e 10A ak Cc lector current DIMENSIONS ARE IN INCHES AND (MILLIMETERS) pe :404(10.26) Te -190(4,83) 086(1.39) Minimum fT of 3 MHz at 10V, 0.5A _ Ty Th tars Customer-specified selections available 1D + Fez case y TEMPERATURE J | f BFE OINT + .355(9.02) Taeeeyo \ 82516 -25) 2201860 TERM. 4 500(12.7)MIN. TERM.2 Baer ia TERM3 , se age (tee [termi | Term.2 | Term3 | aa | [ro-220-aB| Base | COLLECTOR | EMITTER | COLLECTOR | maximum ratings (Tc = 25C) (unless otherwise noted) RATING SYMBOL TIP42 TIP42A TIP42B TIP42C UNITS Collector-Emitter Voltage VcEO -40 -60 -80 ~100 Volts Collector-Base Voltage VcoBo -80 -100 -120 -140 Volts Emitter Base Voltage VEBO -5 5 -5 6 Volts Collector Current Continuous lo 6 -6 6 -6 A Peak Icom -10 -10 -10 -10 Base Current Continuous Ip -3 -3 3 -3 A Total Power Dissipation @ Ta = 25C Pp 2 2 2 2 Watts @ To = 26C 65 65 65 65 Operating and Storage Junction Temperature Range Ty, Tsta | -65 to +150 | -65to+150 | -65 to +150 | -65 to +150 C thermal characteristics Thermal Resistance, Junction to Case Resc 1.92 1.92 1.92 1.92 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 250 250 250 250 C 791electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Collector-Emitter Breakdown Voltage TIP42 VcEO -40 _ - Volts (Ic = 30mA) TIP42A ~60 TIP42B -80 _ TIP42C ~100 _ Collector Cutoff Current IcCEO (VcE = -30V) TIP42, TIP42A _ _ -0.7 mA (VCE = -60V) TIP42B, TIP42C _ _ -0.7 Collector Cutoff Current IcES (Voce = -80V) TIP42 _ _ -0.4 mA (VcE = -100V) TIP42A _ _ ~0.4 (VcE = -120V) TIP42B _ _ -0.4 (VCE = -140V) TIP42C ~0.4 Emitter Cutoff Current (Vep = -SV, Io = 0) l'EBO _ _ -1 mA second breakdown | Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 3 | on characteristics DC Current Gain hee (Ic = -.3A, Vog = -4V) 30 _ - (Ic = -3A, Voce = -4V) 15 _ 75 Collector-Emitter Saturation Voltage VcE(sat) (Ic = -6A, IB = -.6A) _ _ -1.5 Vv Base-Emitter Voltage VBE (Ig = -BA, Voce = -4V) eo | - 2 v switching characteristics Turn-on Time Ri = 50, Ic = -6A ton 0.4 us Ig1 = Iga = 0.6A Turn-off Time Vee(oft) = 4V toff _ 0.7 _ INPUT atk MONITOR OouTPUT 1NS14 1N914 MONITOR Rapi * 102 1NO14 RL 52 NOTES: A. B. c D. E Vea1 168 V ADJUST FOR Von * -14V AT INPUT MONITOR TEST CIRCUIT Vgen is a 30-V pulse into a 50 2 termination. The Vgen waveform is supplied by a generator with the following characteristics: t; < 15 ns, t< 15ns, Zour = 502, tw = 20ys, duty cycle < 2%. . Waveforms are monitored on an oscilloscope with the following characteristics: t, < 15ns, Rin 2 10 MQ, Cin < 11.5 pF. Resistors must be noninductive types. . The d-c power supplies may require additional bypassing in order to minimize ringing. FIGURE 1. RESISTIVE-LOAD SWITCHING 792 weur AY pon MONITOR t Von * 14 --4+ 90% ! { ouTeuT 90% 1 MONITOR 10% VOLTAGE WAVEFORMSSTATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT Vce*-4V Te = 25C See Notes 5 and 6 8 & = eo 2 hgE~Static Forward Current Trensfer Ratio 1 ~0.01 -0.04 -0.1 -0.4 -1 4 -10 iCollector CurrentA FIGURE2, TYPICAL CHARACTERISTICS FORWARD-BIAS SAFE OPERATING AREA 100 tw* us,d= = tw = 1ms,d=0.1 = 10% tw = 10 ms, d= 0.1 = 10% D.C, See Note - e tc Collector Current A ah 0.01 1.0 10 100 1k Vee Collector-Emitter Voltage V FIGURE 3 MAXIMUM SAFE OPERATING AREA NOTE 7: This combination of maximum voltage and current may be achieved only when switching from seturation to cutoff with a clamped inductive-loed. DISSIPATION DERATING CURVE 888 8 3B = o PyMaximum Continuous Device Dissipation-wW 0 2 50 75 #86100) 6125 = 150 TeCase TemperatureC FIGURE 4 THERMAL INFORMATION 793