SPW35N60C3
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=100 °C
Pulsed drain current1) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=17.3 A, VDD=50 V 1500 mJ
Avalanche energy, repetitive tAR
1),2) EAR ID=34.6 A, VDD=50 V
Avalanche current, repetitive tAR
1) IAR A
Drain source voltage slope dv/dtID=34.6 A,
VDS=480 V, Tj=125 °C V/ns
Gate source voltage VGS static V
VGS AC (f>1 Hz)
Power dissipation Ptot TC=25 °C W
Operating and storage temperature Tj,Tstg °C
±20
±30
313
-55 ... 150
1.5
34.6
50
Value
34.6
21.9
103.8
VDS @Tj,max 650 V
RDS(on),max 0.1 Ω
ID 34.6 A
Product Summary
Type Package Ordering Code Marking
SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3
PG-TO247
Rev. 2.5 Page 1 2008-02-11
Reverse diode dv/dt dv/dt 15 V/ns
6)
Please note the new package dimensions arccording to PCN 2009-134-A