PD - 9.1104B IRF7205 HEXFET(R) Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V RDS(on) = 0.070 ID = -4.6A T o p View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units -4.6 -3.7 -15 2.5 0.020 20 -3.0 -55 to + 150 A W W/C V V/nS C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient http://store.iiic.cc/ Min. Typ. --- --- Max. Units 50 C/W 8/25/97 IRF7205 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS Qg Q gs Q gd t d(on) tr t d(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance IGSS Min. -30 --- --- --- -1.0 --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.024 --- V/C Reference to 25C, ID = -1mA --- 0.070 VGS = -10V, I D = -4.6A --- 0.130 VGS = -4.5V, ID = -2.0A --- -3.0 V VDS = VGS, I D = -250A 6.6 --- S V DS = -15V, ID = -4.6A --- -1.0 VDS = -24V, VGS = 0V A --- -5.0 VDS = -15V, VGS = 0V, TJ = 70 C --- -100 VGS = -20V nA --- 100 VGS = 20V 27 40 I D = -4.6A 5.2 --- nC VDS = -15V 7.5 --- VGS = -10V 14 30 VDD = -15V 21 60 I D = -1.0A ns 97 150 R G = 6.0 71 100 RD = 10 D --- 2.5 --- nH LS Internal Source Inductance --- 4.0 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 870 720 220 --- --- --- pF Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = -10V = 1.0MHz G S Source-Drain Ratings and Characteristics IS ISM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- -2.5 showing the A G integral reverse --- --- -15 p-n junction diode. S --- --- -1.2 V TJ = 25C, IS = -1.25A, VGS = 0V --- 70 100 ns TJ = 25C, IF = -4.6A --- 100 180 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ISD -4.6A, di/dt 90A/s, VDD V(BR)DSS , TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. http://store.iiic.cc/ IRF7205 http://store.iiic.cc/ C, IRF7205 12 http://store.iiic.cc/ IRF7205 V DS VGS RD D.U.T. RG + VDD -10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit tr td(on) t d(off) tf VGS 10% 90% VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 PDM 0.02 1 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient http://store.iiic.cc/ 100 IRF7205 Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F -10V QGS QGD D.U.T. +VDS VGS VG -3mA IG Charge ID Current Sampling Resistors Fig 12a. Basic Gate Charge Waveform http://store.iiic.cc/ Fig 12b. Gate Charge Test Circuit IRF7205 Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test RG VGS * + - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13.For P-Channel HEXFETS http://store.iiic.cc/ [ ISD ] IRF7205 Package Outline SO8 Outline INCHES DIM D -B- 5 8 7 6 5 1 2 3 4 e 6X 0.25 (.010) M A M MIN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e K x 45 e1 e1 A -C- 0.10 (.004) L 8X A1 B 8X 0.25 (.010) MAX 5 H E -A- 6 C 8X .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC .2284 .2440 5.80 K .011 .019 0.28 0.48 L 0.16 .050 0.41 1.27 8 0 8 0 6.20 RECOMMENDED FOOTPRINT NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6 MAX H M C A S B S MILLIMETERS MIN 0.72 (.028 ) 8X 6.46 ( .255 ) 1.78 (.070) 8X MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X Part Marking Information SO8 E X A M P LE : TH IS IS A N IR F 7 101 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X F 7 101 T OP PART NUMBER http://store.iiic.cc/ W AFER LO T C O D E (LA S T 4 D IG IT S ) B O T TO M IRF7205 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T ER M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E ED D IR E C T IO N N O TE S: 1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R. 2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ). 3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 . 33 0. 00 (12 .99 2) M A X. 1 4. 40 ( .5 66 ) 1 2. 40 ( .4 88 ) N O T ES : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 http://store.iiic.cc/