OL DE gj 38?50481 0047195 1 T= 323-17 Hign-voitage Power Transistors File Number 1100 2N6420, 2N6421, 2N6422, 2N6423 3875081 G E SOLID STATE High-Voltage Medium-Power Silicon P-N-P Transistors For High-Speed Switching and Linear-Amplifier Applications Features: @ High voltage ratings: = Large safe-operating area Vceo(sus) = -175 V max. (2N6420) ~250 V max. (2N6421) -300 V max. (2N6422) -300 V max. (2N6423) tui TERMINAL DESIGNATIONS The RCA 2N6420, 2N6421, 2N6422, and 2N6423 are epitax- ial silicon p-n-p power transistors with high-voltage ratings E and fast switching speeds. Typical applications for these transistors include high-voltage operational amplifiers, switching regulators, converters, inverters, deflection stages and high-fidelity amplifiers. These types are suppliedin steel JEDEC TO-213AA hermet- ic packages. 8208-27516 c (FLANGE) JEDEC TO-213AA MAXIMUM RATINGS, Absolute-Maximum Values: 2N6420 2N6421 2N6422 2N6423 *Vcso -250 -375 ~550 -550 Vv *Vceo(sus) 175 -250 -300 -300 Vv Veso -6 Vv MMe ccc cece cece eee e eee e eee ee eet ene e sees So -2 A low -5 A MB cece cece reer cee e trent e teen wena tenet anes en neee -1 A Py ToS100C, VoeS50V oo e eee e reece cere e nee 20 Ww * Te 25C, Vee40V ... 35 Ww ToS 25C, Vee>d0V ... ____ SSS. Sere Fig. 1 Tox 25C, VeeMOV wo cece cece ee cece eens eens ee See Figs. 1 8B "Tato." Ta SSC to $200 PS Tk, At distances = 1/32 In. (0.8 mm) from case for 105 MAX 2.0... cece eee e eens 235 C *{n accordance with JEDEC registration date - 197 0737 D-04Neemeey ome rae mere 4 nin sen 3875081 GE SOLID STATE OL DEB aaysuas uo 3 7+ 33-19 High-Voltage Power Transistors 2N6420, 2N6421, 2N6422, 2N6423 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS CHARAC- | VOLTAGE CURRENT 2N6421 . TERISTIC] Vide Ade 2N6420 2neqz2 | 2N6423 [Units Vce | Vee le tg Min. | Max.|Min. | Max. | Min. |Max. * llcEO 150 - -10} - 5 - 5 * It EX 225 ; 1.5 - -1 - - _ 2N6421|340 | 1.5 - - - -1 _ - 2N6422|450 | 1.5 - - - -1 _ |mA ~450 | 1.5 - - = - - 2 * HICEX 225 | 1.5 - -3| - - - - Tc=150C |-300 | 1.5 = -|- 3{ | -6 * lego 6 0 - 5 - 0.5 4|-0.5 hee -10 0.18 40 - 40| 40} 10 -0.54 40 | 200} - - - - * 2 0,758 - _ - - 10 | 100 10 0.758 - - - - 30 | 150 * -2 1a - _ 8 80 - - * 10 18 10 - 25] 100 - - VBE -10 1a - 14] - -1.4 4|-1.4 0.758 |0.075 - - = - -1.8) * [VBe(sat) ial -o1 | |-14] [-14] - | - 0,75a |0.075 - - - _ _ -1 Voce (sat) jal-ois | | -s{ - [o7s| - | -] * WVcgolsus)b 0.054 0j-176| -} - | -300] - 2N6421 0.054 0 = |-250) - - - 2N6422 0.054 0 - {-300/ - - - Isib 100 -0.15 0.15) j-O157 A * thgel #=5MHz] 10 0.2 2 2{| - 3] - * | =1kHz | 30 -0.1 25 | 350 | - - - Cobo Vopr i0V 0 - 180 - 180 - 180 | pF {=1MHz * t 0.75 |0.075d _ _ _ ~ 0.5 -1 -O1d) - | - 3] - | - -0.75 |-0.075) _ _ - _ 6 * Ite 1 | -o1d| _~|- a} | |4 -0.75 j-0.075d| -|- - - 3 * tc tf 1 | -o1d| -|- 3] |- Fac TT [TAT T- 7 tie ty t-te) * in accordance with JEDEC registration data, "Voce = 200V, tp = 20 us Pulsed: pulse duration = 300 us, duty factor 2%. Sig, = ay CAUTION: The sustaining voltage Vega (sus) MUST NOT be measured on a curve tracer. 198 _ 0738 0-053875081 GE SOLID STATE Ob DEB 3875061 DOLLA? 5 VT rss-19 mugr-vonage Power Transistors 2N6420, 2N6421, 2N6422, 2N6423 PULSED I-A SINGLE NONREPETITIVE : PULSE a + x SE TEMPERATURE (Tc)#25C <' -0.1-}(CURVE MUST BE DERATED LINEARLY a 8] WITH INCREASE IN TEMPERATURE) % 6 Fk z Ww 4 xr > Oo 4 VoEo MAX.=-I75 V (2N6420) Vceo MAX. =- 250 V (2N642)) V, MAX. =- 300 V(2N6422,2N6423) t fl 2 4 6 at 2 4 681 2 48 S10 -100 =1000 COLLECTOR-TO-EMITTER VOLTAGE (Voe) V 92CM- 30343 Fig. 1 Maximum operating areas for all types. CASE TEMPERATURE (Tc)= {00C (CURVE MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) Ba AREA 00 NOT OERATE ThE SPECIFIED | | on j | Su VALUE MAX. sim tttte, | EE (CONTINUOUS) Vo, 49 8 % BR Oh awa age N Zzo NS egy ou gs % 35% Ne, cok NS eye \ #he 1 baa oo Wo we Vero MAX -175 V (2N6420) i[1 ges 1 Voeg MAX. = -250 a 2 r L Vogo MAX *-300V(2N6422, + E bo L ro or | 2 4 68! z 46a! 4 CASE TEMPERATURE (To)"C =" =100 1000 s2cs-968 COLLECTORTO-EMITTER VOLTAGE (Vogi-V 92cs- 30342 Fig. 2 -- Maximum operating areas for all types. Fig. 2 Derating curves for all types. . 199 0739 D-06: 3875081 GE soLip state OL DE 4875081 BOLLS 1, T-33-|9 I High-Voltage Power Transistors 2N6420, 2N6421, 2N6422, 2N6423 COLLECTOR-TO-EMITTER VOLTAGE (VcE)?-!0V e28C COLLECTOR - TO-EMITTER VOLTAGE }a-8V CASE TEMPERATURE G e & 2 5 Z z 2 4 = + g a g z 2 z 3 z 3 -10 -t 0.01 -Ol a COLLECTOR CURRENT (I IA 9205-15972 COLLECTOR CURRENT (Ich-A 92CS-19219 Fig. 4 Typical dc beta characteristics for all types. Fig. 5 Typical gain-bandwidth product for ail types. COLLECTOR- TO-EMITTER VOLTAGE { 1e-5 & f 2% i + F < & . ot a 4 2 6 2 2 2 &. w & = g 2 VOLTAGE I -18 -2 72.5 3 GASE-TO- EMITTER VOLTAGE (VgI-v 9208-19974 ot 15 2 COLLECTOR CURRENT (I}A Fig. 6 ~ Typical saturation-voltage characteristics Fig. 7 Typical transfer characteristics for all types. for all typas. PULSE DURATION 2 20 ys REPETITION RATE * 200 PULSES/a COLLECTOR SUPPLY VOLTAGE (Voghe-200V Tp," tpattc/Be0125 Le CASE TEMPERATURE PULSE DURATION F203 REPETITION RATE = 200 PULSES /e COLLECTOR SUPPLY VOLTAGE (Vocl#-200 V l Ta,*ieg*ic/8* 125 Ic CASE TEMPERATURE (Toke 25 C a wo STORAGE TIME (tg} no TURN-ON TIME ( oq} OR FALL TIME (1)pe 9 -O5 -I AS -2 COLLECTOR CURRENT [Ic)}A 9268-19287A0 COLLECTOR CURRENT (I}-A 92C5-1SS00R2 Fig. 8 Typical storage time characteristic for Fig. 9 - Typical turn-on time and fall-time all types. charactaristics for all types. 200 0740 D-0?17299 9 3875081 GE SOLID state OF DEB sarscas 40 I: T33)7 , tugn-voitage rower Transistors 2N6420, 2N6421, 2N6422, 2N6423 CLARE MODEL No, HGF 1004 0. > . OR EQUIVALENT DEVICE CHANNEL A To HEWLETT PACKARD OSCILLOSCOPE MODEL No 503 COLLECTOR CURRENT (Ig)A Oo = -175 1-300 -250 3 OR EQUIVALENT O 60 CHANNEL B COLLECTOR- TO-EMITTER He VOLTAGE (Vce)-V NOTE: SUSTAINING VOLTAGES Vero (as) ARE ACCEPTABLE WHEN TRACES FALL TO THE RIGHT AND ABOVE POINTS 390 a FOR TYPE 2N6420 POINTS "G" FOR TYPE 2N6421 aw AND POINTS "C" FOR TYPES 2N6422 AND 2N6423. 9268-30340 9208-30341 Fig. 10 Circuit used to measure sustaining Fig. 11 Oscifloscope display tor measurement voitage Voeg (sus) for all types. of sustaining voitages. Vapt+6V Vee#-200V INPUT? OUTPUT TO HEWLET T= PACKARO OSCILLOSCOPE MODEL No. 2144, 0R {TEKTRONIX MOOEL EQUIVALENT N ie . TIME EQUIVALENT) @ASE CURRENT PULSE (OpF g | Y pevice e jon CONDITION | - UNDER Z VCE (80) pe 90% INPUT FROM TEST 17, PULSE GENERATOR o8 (PULSE DURATIONS = = re 10% 20ps. REP, RATE+ Sw . ke = 200Hz) BU] 1 : SADJUST Rg FOR Te, AND Ro FOR Tc Se igo ' fr 1 Is oy PULSE. 4 [g, AND Ig MEASURED WITH TEKTRONIX CURRENT PROBE 48 | TURN | PEOI9 AND TYPE 134 AMPLIFER,OR EQUIVALENT 3 TURN, ON Te 8 g2cs-Is976 S2CS-ES77A3 Fig. 12 Circuit used to measure saturated switching Fig. 13 Phase relationship between input current t times for all types. and output voltage showing reference . points for specification of switching times. INPUT TIME O741 D-06 201