Data Sheet 1 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
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Data Sheet 2 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
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Data Sheet 3 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
Pin Definitions and Functions
Pin Symbol Function
1 GND Ground of chip
2 IN1
4 IN2
Input 1,2 activates channel 1,2 in case of logic
high signal
3 ST1
5 ST2
Diagnostic feedback 1 & 2 of channel 1,2
open drain, low on failure
6,12,
heat
slug
Vbb Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
7,9,11 NC Not Connected
8 OUT2
10 OUT1
Output 1,2 protected high-side power output
of channel 1 and 2. Design the wiring for the
max. short circuit current
Pin configuration
(top view)
GND 1• 12 Vbb
IN1 2 11 NC
ST1 3 10 OUT1
IN2 4 9 NC
ST2 5 8 OUT2
Vbb 6 7 NC
Vbb*
* heat slug
Data Sheet 4 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 6)
V
bb 43 V
Supply voltage for full short circuit protection
T
j,start =-40 ...+150°C
V
bb 36 V
Load current (Short-circuit current, see page 6)
I
L self-limited A
Load dump protection1)
V
LoadDump =
V
A +
V
s,
V
A = 13.5 V
R
I2)= 2 Ω,
t
d= 400 ms; IN = low or high,
each channel loaded with
R
L= 13.5 Ω,
V
Load dump3)60 V
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC)4)
T
a = 25°C:
(all channels active)
T
a = 85°C:
P
tot 3,05
1,59
W
Maximal switchable inductance, single pulse
Vbb = 12V,
T
j,start = 150°C4),see diagrams on page 10
I
L= 2.9 A,
E
AS = 84 mJ, 0 Ω one channel:
I
L= 5.7 A,
E
AS = 168 mJ, 0 Ω two parallel channels:
ZL14
7.6
mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
V
ESD 1.0
4.0
8.0
kV
Input voltage (DC) see internal circuit diagram page 9
V
IN -10 ... +16 V
Current through input pin (DC)
Pulsed current through input pin5)
Current through status pin (DC)
I
IN
I
INp
I
ST
±0.3
±5.0
±5.0
mA
1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2)
R
I = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
5) only for testing
Data Sheet 5 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
P
arameter an
d
C
on
di
t
i
ons
S
ym
b
o
l
V
a
l
ues
U
n
i
t
min typ max
Thermal resistance
junction - Case6) each channel:
R
thjC -- -- 5 K/W
junction – ambient6)
@ 6 cm2 cooling area one channel active:
all channels active:
R
thja --
--
--
--
45
40
--
--
--
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = -40...+150°C,
V
bb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 2 A
each channel,
T
j = 25°C:
T
j = 150°C:
two parallel channels,
T
j = 25°C:
see diagram, page 11
R
ON --
--
--
110
210
55
140
280
70
mΩ
Nominal load current one channel active:
two parallel channels active:
Device on PCB6),
T
a= 85°C,
T
j≤ 150°C
I
L(NOM) 1.8
3.4
2.4
3.9
-- A
Output current while GND disconnected or pulled up7);
Vbb = 32 V,
V
IN = 0,
see diagram page 9
I
L(GNDhigh) -- -- 2 mA
Turn-on time8)IN to 90%
V
OUT:
Turn-off time IN to 10%
V
OUT:
R
L =12Ω
t
on
t
off
--
--
100
100
250
270
µs
Slew rate on 8) 10 to 30%
V
OUT,
R
L=12Ω: d
V
/dton 0.2 -- 1.0 V/µs
Slew rate off 8) 70 to 40%
V
OUT,
R
L=12Ω: -d
V
/dtoff 0.2 -- 1.1 V/µs
6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
7) not subject to production test, specified by design
8) See timing diagram on page 12.
Data Sheet 6 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
P
arameter an
d
C
on
di
t
i
ons,
each of the four channels
S
ym
b
o
l
V
a
l
ues
U
n
i
t
at Tj = -40...+150°C,
V
bb = 12 V unless otherwise specified
min typ max
Operating Parameters
Operating voltage
V
bb(on)
5.5 -- 40 V
Undervoltage switch off
9
)
T
j
=-40°C...25°C
:
V
bb(u so)
-- -- 4.5 V
T
j
=125°C: -- -- 4.5
10)
Overvoltage protection
11)
I
bb
= 40 mA
V
bb(AZ)
41 47 52 V
Standby current
12
)
T
j
=-40°C...25°C
:
V
IN
=0;
see diagram page 11
T
j
=150°C:
I
bb(off)
--
--
4.5
--
8
12
µA
T
j
=125°C: -- -- 8
10)
Off-State output current (included in
I
bb(off)
)
V
IN
= 0; each channel
I
L(off)
-- 1 5 µA
Operating current
13)
,
V
IN
= 5V,
one channel on:
all channels on:
I
GND
--
--
0.5
1.0
0.9
1.7
mA
Protection Functions
14)
Current limit,
Vout = 0V
,
(see timing diagrams, page 12)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
I
L(lim)
--
--
5
--
9
--
14
--
--
A
Repetitive short circuit current limit,
T
j
=
T
jt
each channel
two channels
(see timing diagrams, page 12)
I
L(SCr)
--
--
6.5
6.5
--
--
A
Initial short circuit shutdown time
T
j,start
=25°C:
Vout = 0V (see timing diagrams on page 12)
t
off(SC)
-- 2 -- ms
Output clamp (inductive load switch off)
15)
at VON(CL) = Vbb - VOUT,
I
L= 40 mA
V
ON(CL)
41 47 52
V
Thermal overload trip temperature
T
jt
150 -- -- °C
Thermal hysteresis
∆
T
jt
-- 10 -- K
9) is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
10 not subject to production test, specified by design
11)Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also
V
ON(CL) in table of protection functions and
circuit diagram on page 9.
12) Measured with load; for the whole device; all channels off
13)Add
I
ST, if
I
ST > 0
14) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
15)If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
Data Sheet 7 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
Parameter and Conditions,
each of the four channels
Symbol Values Unit
at Tj = -40...+150°C,
V
bb = 12 V unless otherwise specified
min typ max
Reverse Battery
Reverse battery voltage
16
) -
V
bb
-- -- 32 V
Drain-source diode voltage
(Vout > Vbb)
I
L
= - 2.0 A,
T
j
= +150°C
-
V
ON
-- 600 -- mV
Diagnostic Characteristics
Open load detection voltage
V
OUT(OL)1
1.7 2.8 4.0 V
Input and Status Feedback
17)
Input resistance
(see circuit page 9)
R
I
2.5 4.0 6.0 kΩ
Input turn-on threshold voltage
V
IN(T+)
-- -- 2.5 V
Input turn-off threshold voltage
V
IN(T-)
1.0 -- -- V
Input threshold hysteresis ∆
V
IN(T)
-- 0.2 -- V
Status change after positive input slope
18)
with open load
t
d(STon)
-- 10 20 s
Status change after positive input slope
18)
with overload
t
d(STon)
30 -- -- s
Status change after negative input slope
with open load
t
d(SToff)
-- -- 500 s
Status change after negative input slope
18)
with overtemperature
t
d(SToff)
-- -- 20 s
Off state input current
V
IN
= 0.4 V:
I
IN(off)
5 -- 20 µA
On state input current
V
IN
= 5 V:
I
IN(on)
10 35 60 µA
Status output (open drain)
Zener limit voltage
I
ST
= +1.6 mA:
ST low voltage
I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
--
--
--
0.6
V
16) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and
circuit page 9).
17)If ground resistors RGND are used, add the voltage drop across these resistors.
18)
not subject to protection test, specified by design
Data Sheet 8 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
Truth Table
( each channel )
IN OUT ST
Normal operation L
H
L
H
H
H
Open load L
H
Z
H
L19)
H
Overtemperature L
H
L
L
H
L
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel (see truth
table). If switching channel 1 to 2 in parallel, the status outputs ST1 and ST2 have to be configured as a 'Wired
OR' function with a single pull-up resistor.
Terms
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967
967
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67
Leadframe (Vbb) is connected to pin 6,12
External RGND optional; single resistor RGND = 150 Ω for reverse battery protection up to the max.
operating voltage.
19) L, if potential at the Output exceeds the OpenLoad detection voltage
Data Sheet 9 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
Input circuit (ESD protection),
IN1 or IN2
,1
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,
5
(6'='
,
,
,
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
Status output,
ST1 or ST2
67
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9
56721
ESD-Zener diode: 6.1 V typ., max 0.3 mA; RST(ON) < 375 Ω
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
Inductive and overvoltage output clamp,
OUT1 or OUT2
9EE
287
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V
ON clamped to
V
ON(CL) = 47 V typ.
Overvolt. and reverse batt. protection
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,
5
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67
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9
V
Z1 = 6.1 V typ.,
V
Z2 = 47 V typ.,
R
GND = 150 Ω,
R
ST= 15 kΩ,
R
I= 3.5 kΩ typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
Open-load detection,
OUT1 or OUT2
OFF-state diagnostic condition:
Open Load, if
V
OUT > 3 V typ.; IN low
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*1'
Any kind of load. In case of IN= high is
V
OUT ≈
V
IN -
V
IN(T+).
Due to VGND > 0, no VST = low signal available.
Data Sheet 10 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
GND disconnect with GND pull up
352)(7
9
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67
287
*1'
EE
9EE 9*1'
9,1 967
Any kind of load. If VGND >
V
IN -
V
IN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
Vbb disconnect with energized inductive
load
352)(7
9
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9EE
KLJK
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 10) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
I
n
d
uct
i
ve
l
oa
d
sw
i
tc
h
-o
ff
energy
dissipation
352)(7
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(
(
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5
(/RD
5/
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^
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=
Energy stored in load inductance:
E
L = 1/2·L·I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL> 0 Ω:
E
AS=IL·L
2·RL
(Vbb +|V
OUT(CL)|) OQ(1+ IL·RL
|VOUT(CL)| )
Maximum allowable load inductance for
a single switch off (one channel)4)
/ I,/Tj,start = 150°C, Vbb = 12 V, RL=0Ω
ZL [mH]
I
L [A]
Data Sheet 11 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
Typ. on-state resistance
521 I9EE7M; IL= 2 A, IN = high
RON [mOhm]
7M &
&
&
V
bb [V]
Typ. standby current
,EERII I7M;Vbb = 9...34 V, IN1,2 = low
Ibb(off) [µA]
T
j [°C]
Data Sheet 12 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
Figure 1a: Vbb turn on:
,1
9
287
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67RSHQGUDLQ
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Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
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W
9287
,/
W
W
on
off
G9GWRQ
G9GWRII
Figure 2b: Switching a lamp:
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,
Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
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Heating up of the chip may require several milliseconds, depending
on external conditions
Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 to
channel 4
Data Sheet 13 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
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ST1 and ST2 have to be configured as a 'Wired OR' function
ST1/2 with a single pull-up resistor.
Figure 4a: Overtemperature:
Reset if
T
j <
T
jt
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W
9
7
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
Open load of channel 1; other channels normal
operation
287
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67
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Figure 6a: Status change after, turn on/off to
overtemperature
Overtemperature of channel 1; other channels normal
operation
67
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Data Sheet 14 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
Package Outlines
Figure 1 PG-DSO-12-9 (Plastic Dual Small Outline Package) (RoHS-compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
16
712
0.8
(1.55)
2.35
±0.1
0.1
±0.05 3)
2.6 MAX.
C
0.1
±0.3
10.3
(4.4)
4.2
±0.1
(1.8)
±0.1
1.6
ø0.8 x 0.1
-0.05
Depth
4)
+0.13
0.4
1
5 x 1=5
C
0.25
M
AB
±0.1
5.1
6.4
A
±0.1
7.5
B
±0.1
7.8
±0.1
(Heatslug)
0.25 B
(0.2)
0.7
±0.15
+0.075
0.25
-0.035
5˚
±3˚
8˚ 8˚
0.1 12x
1)
Seating Plane
+0.1
0
2)
Does not include plastic or metal protrusion of 0.15 max. per side
Stand OFF
Pin 1 Index Marking; Polish finish
Stand OUT
All package corners max. R 0.25
1)
2)
3)
4)
1)
C
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.Dimensions in mm
Data Sheet 15 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5210L
Revision History
Version Date Changes
V1.1 2007-05-29 Creation of the green datasheet.
First page :
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.
Edition 2007-05-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 5/29/07.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.