BC846A ... BC850C BC846A ... BC850C IC = 100 mA hFE = 180/290/520 Tjmax = 150C SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren VCEO = 30...65 V Ptot = 250 mW Version 2017-07-25 Typical Applications Signal processing, Switching, Amplification Commercial grade 1) +0.1 1.1 -0.2 2.9 0.1 3 1 1.30.1 Type Code Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Pb 1 Mechanische Daten 1) Mechanical Data ) 2 Taped and reeled 1.90.1 3000 / 7" Weight approx. 1=B 2=E Besonderheiten Universell anwendbar Drei Stromverstarkungsklassen Konform zu RoHS, REACH, Konfliktmineralien 1) RoHS EE WE 2.4 0.2 0.4 +0.1 -0.05 Typische Anwendungen Signalverarbeitung, Schalten, Verstarken Standardausfuhrung 1) EL V SOT-23 (TO-236) 3=C Dimensions - Mae [mm] Gegurtet auf Rolle 0.01 g Gewicht ca. Case material UL 94V-0 Gehausematerial Solder & assembly conditions 260C/10s Lot- und Einbaubedingungen MSL = 1 Type Code BC846A = 1A BC846B = 1B BC846C = 1C Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren BC847A = 1E BC847B = 1F BC847C = 1G BC848A = 1E BC848B = 1F BC848C = 1G BC850A = 1E BC850B = 1F BC850C = 1G BC849A = 1E BC849B = 1F BC849C = 1G BC856 ... BC860 Maximum ratings 2) Grenzwerte 2) BC846 BC847 BC850 BC848 BC849 Collector-Emitter-voltage - Kollektor-Emitter-Spannung B open VCEO 65 V 45 V 45 V 30 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 80 V 50 V 50 V 30 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO Power dissipation - Verlustleistung 6V 5V Ptot 250 mW ) IC 100 mA Peak Collector current - Kollektor-Spitzenstrom ICM 200 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Collector current - Kollektorstrom 1 2 3 DC 3 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches TA = 25C, unless otherwise specified - TA = 25C, wenn nicht anders angegeben Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BC846A ... BC850C Characteristics Kennwerte Tj = 25C Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 5 V, IC = 10 A Group A Group B Group C hFE - - - 90 150 270 - - - VCE = 5 V, IC = 2 mA Group A Group B Group C hFE 110 200 420 180 290 520 220 450 800 VCEsat - - 90 mV 200 mV 250 mV 600 mV VBEsat - - 700 mV 900 mV - - VBE 580 mV - 660 mV - 700 mV 720 mV ICBO - - - - 15 nA 5 A IEBO - - 100 nA fT - 300 MHz - CCBO - 3.5 pF 6 pF CEBO - 9 pF - Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 30 V, (E open) VCE = 30 V, Tj = 125C, (E open) Emitter-Base cutoff current VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Thermal resistance junction to ambient Warmewiderstand Sperrschicht - Umgebung RthA < 420 K/W 2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 2 2 Tested with pulses tp = 300 s, duty cycle 2% Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG