MS2441
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DESCRIPTION: DESCRIPTION:
The MS2441 is a silicon NPN power transistor designed
for high peak power and low duty cycles applications such as
DME and IFF. The MS2441 utilizes internal input/output
impedance matching, resulting in improved broadband
performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 22 A
PDISS Power Dissipation 1458 W
TJ Junction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C) Junction-case Thermal Resistance 0.12 °°C/W
FeaturesFeatures
• DESIGNED FOR HIGH POWER PULSED IFF AND DME
APPLICATIONS
• 400 W (min.) DME 1025 – 1150 MHz
• 1025 – 1150 MHz
• 50 VOLTS
• POUT = 400 WATTS
• GP = 6.5 dB MINIMUM
• 20:1 VSWR CAPABILITY
• INPUT/OUTPUT MATCHING
• COMMON BASE CONFIGURATION
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS