HEXFET® Power MOSFET
PD - 91480B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
9/12/02
SO-8
VDSS = 30V
RDS(on) = 0.029Ω
IRF7313
Description
Symbol Maximum Units
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS ± 20
TA = 25°C 6.5
TA = 70°C 5.2
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction) IS2.5
TA = 25°C 2.0
TA = 70°C 1.3
Single Pulse Avalanche Energy EAS 82 mJ
Avalanche Current IAR 4.0 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt dv/dt 5.8 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-AmbientRθJA 62.5 °C/W
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
ID
PD
V
W
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
lGeneration V Technology
lUltra Low On-Resistance
lDual N-Channel MOSFET
lSurface Mount
lFully Avalanche Rated
IRF7313
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 0.78 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V
trr Reverse Recovery Time 45 68 ns TJ = 25°C, IF = 1.7A
Qrr Reverse RecoveryCharge 58 87 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
30
2.5
A
S
D
G
Surface mounted on FR-4 board, t ≤ 10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 10mH
RG = 25Ω, IAS = 4.0A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆T
JBreakdown Voltage Temp. Coefficient 0.022 V/°C Reference to 25°C, ID = 1mA
0.023 0.029 VGS = 10V, ID = 5.8A
0.032 0.046 VGS = 4.5V, ID = 4.7A
VGS(th) Gate Threshold Voltage 1.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 14 S VDS = 15V, ID = 5.8A
1.0 VDS = 24V, VGS = 0V
25 VDS = 24V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage 100 VGS = 20V
Gate-to-Source Reverse Leakage -100 VGS = -20V
QgTotal Gate Charge 22 33 ID = 5.8A
Qgs Gate-to-Source Charge 2.6 3.9 nC VDS = 15V
Qgd Gate-to-Drain ("Miller") Charge 6.4 9.6 VGS = 10V, See Fig. 10
td(on) Turn-On Delay Time 8.1 12 VDD = 15V
trRise Time 8.9 13 ID = 1.0A
td(off) Turn-Off Delay Time 26 39 RG = 6.0Ω
tfFall Time 17 26 RD = 15Ω
Ciss Input Capacitance 650 VGS = 0V
Coss Output Capacitance 320 pF VDS = 25V
Crss Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
IRF7313
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 3.5 4.0 4.5 5.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
VDS
IRF7313
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
5.8A
0
40
80
120
160
200
25 50 75 100 125 150
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 1.8A
3.2A
BOTTOM 4.0A
D
0.020
0.024
0.028
0.032
0.036
0.040
0 10203040
A
I , Drain Current (A)
D
V = 10V
GS
V = 4.5V
GS
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0 3 6 9 12 15
A
GS
V , Gate-to-Source Voltage (V)
I = 5.8A
D
ID
IRF7313
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
0
300
600
900
1200
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
010 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D5.8A
V = 15V
DS
IRF7313
Package Outline
SO8 Outline
SO8
Part Marking Information
EXAMPLE : THIS IS AN IRF7101
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
WAFER
LOT CODE
(LAST 4 DIGITS)
XXXX
BOTTOM
PART NUMBER
TOP
INTERNATIONAL
RECTIFIER
LOGO
F7101
312
K x 45°
C
8X
L
8X
θ
H
0.25 (.010) M A M
A
0.10 (.004)
B 8X
0.25 (.010) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.070)
8X
6.46 ( .255 )
1.27 ( .050 )
3X
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ
0° 8° 0° 8°
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
5
6
A1
e1
IRF7313
SO8
Dimensions are shown in millimeters (inches)
Tape & Reel Information
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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http://www.irf.com/ Data and specifications subject to change without notice. 9/02
