FQD7P06 / FQU7P06
Rev. A2. May 2001©2001 Fairchild Semiconductor Corporation
Elerical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.6mH, IAS = -5.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -7.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit ions Min Typ Max Unit s
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-60 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = -250 µA, Referenced to 25°C -- -0.07 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = -60 V, VGS = 0 V -- -- -1 µA
VDS = -48 V, TC = 125°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA
On Characteri st ics
VGS(th) Gate Threshold Volt age VDS = VGS, ID = -250 µA-2.0 -- -4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = -10 V, ID = -2.7 A -- 0.36 0.451 Ω
gFS Forward Transconductance VDS = -30 V, ID = -2.7 A -- 3.8 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 225 295 pF
Coss Output Capacitance -- 110 145 pF
Crss Reverse Transfer Capacitance -- 25 3 2 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -30 V, ID = -3.5 A,
RG = 25 Ω
-- 7 25 ns
trTurn-On Rise Time -- 50 110 ns
td(off) Turn-Off De l a y Time -- 7 .5 25 ns
tfTurn -Off Fa ll Time -- 2 5 60 ns
QgTotal Gate Ch arge VDS = -48 V, ID = -7.0 A,
VGS = -10 V
-- 6.3 8.2 nC
Qgs Gate-Source Charge -- 1.6 -- nC
Qgd Gate-Drain Charge -- 3.1 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- -5.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -21.6 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = -5.4 A -- -- -4.0 V
trr Reverse Recovery Time VGS = 0 V, I S = -7.0 A,
dIF / dt = 100 A/µs
-- 77 -- ns
Qrr Reverse Recovery Charge -- 0.23 -- µC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)