RECTRON FM5821A SEMICONDUCTOR -W-S-V50 TECHNICAL SPECIFICATION SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE 30 Volts CURRENT 3.0 Amperes FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram DO-214AC MECHANICAL DATA * Epoxy: Device has UL flammability classification 94V-O 0.067 (1.70) 0.051 (1.29) 0.110 (2.79) 0.086 (2.18) 0.180(4.57) 0.160(4.06) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. 0.012 (0.305) 0.006 (0.152) 0.091 (2.31) 0.067 (1.70) 0.059 (1.50) 0.035 (0.89) Single phase, half wave, 60 Hz, resistive or inductive load. 0.008 (0.203) 0.004 (0.102) 0.209 (5.31) 0.185 (4.70) For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25oC unless otherwise noted) SYMBOL FM5821A-W-S-V50 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 30 Volts Maximum RMS Voltage VRMS 21 Volts Maximum DC Blocking Voltage RMS forward current Repetitive peak reverse current tp=2us F=1kHZ square Non repetitive peak reverse current tp=100us square Maximum Average Forward Rectified Current at Derating Lead Temperature VDC IF(RMS) IRRM IRSM 30 10 1 1 Volts A A A IO 3.0 Amps I FSM 80 Amps CJ 200 pF TJ -55 to + 150 0 C Storage Temperature Range T STG -55 to + 150 0 C Repetitive peak avalanche power tp=1us Tj=25 0C Critical rate of rise of reverse voltage PARM 1500 dv/dt 10000 Typical Thermal Resistance R JL RATINGS Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating Temperature Range 30 W 0 V/us C/W ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 2.0A DC SYMBOL @T J = 25 o C @T J = 125 o C o @T J = 25 C Maximum Instantaneous Forward Voltage at 4.0A DC Maximum Average Reverse Current at Rated DC Blocking Voltage o FM5821A-W-S-V50 UNITS .45 VF .375 Volts .53 VF @T J = 125 C .51 @T J = 25 o C 0.2 mAmps 15 mAmps 10 uAmps @T J = 100 o C IR @V R = 12V NOTES : 1. Thermal Resistance (Junction to Ambient). 2. Measured at 1 MHz and applied reverse voltage of 4.0 volts. 3. Also available in DO-214AC (SMA) & DO-214AA (SMB) package. 4. Tin plating. 2004-5 REV: O Mounting Pad Layout 0.094 MAX. (2.38 MAX.) 0.060 MIN. (1.52 MIN.) 0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF Dimensions in inches and (millimeters) RECTRON FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE FIG. 2 - TYPICAL REVERSE CHARACTERISTICS 4 10 3 2 Single Phase Half Wave 60Hz P.C.B Mounted on 0.4X0.4"(10X10mm) Resistive or Inductive Load copper pad areas 1 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, (A) LEAD TEMPERATURE, ( 175 ) FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 80 INSTANTANEOUS REVERSE CURRENT, (mA) AVERAGE FORWARD CURRENT, (A) RATING AND CHARACTERISTIC CURVES ( FM5821A-W-S-V50 ) TJ = 125 1.0 TJ = 75 .1 .01 70 .001 TL = 75 8.3ms Single Half Sine-Wave (JEDEC Method) 60 0 50 40 30 20 10 1 2 5 10 20 50 NUMBER OF CYCLE AT 60Hz 100 FIG. 5 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 800 600 400 INSTANTANEOUS FORWARD CURRENT, (A) FIG. 4 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE (pF) 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) TJ = 25 200 100 80 60 20 10 .1 .4 1.0 4 10 REVERSE VOLTAGE, ( V ) 40 20 10 TJ = 25 Pulse Width = 300uS 1% Duty Cycle 1.0 .1 .2 .3 .4 .5 .6 .7 .8 .9 INSTANTANEOUS FORWARD VOLTAGE, (V) RECTRON