SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE 30 Volts CURRENT 3.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwis e specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FM5821A
-W-S-V50
DO-214AC
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
* Epoxy: Device has UL flammability classification 94V-O
Dimensions in inches and (millimeters)
MECHANICAL DA T A
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
0.035 (0.89)
0.059 (1.50)
0.067 (1.70)
0.091 (2.31)
0.160(4.06)
0.180(4.57)
0.086 (2.18)
0.110 (2.79)
0.067 (1.70)
0.051 (1.29)
MAXIMUM RATINGS
(At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL
V
RRM
V
DC
V
RMS
UNITS
Volts
Volts
Volts
FM5821A-W-S-V50
30
21
30
Maximum Average Forward Rectified Current
at Derating Lead Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method) I
FSM
Amps3.0
80 Amps
I
O
I
F(RMS)
RMS forward current
Repetitive peak reverse current
Non repetitive peak reverse current I
RRM
I
RSM
10 A
1A
1A
tp=2us F=1kHZ square
tp=100us square
Typical Junction Capacitance (Note 2) C
J
200 pF
T
STG
0
C
Storage Temperature Range
-55 to + 150
Operating Temperature Range T
J
-55 to + 150
0
C
Repetitive peak avalanche power P
ARM
1500 W
Critical rate of rise of reverse voltage dv/dt 10000 V/us
Typical Thermal Resistance 30
0
C/WRθ
JL
tp=1us Tj=25
0
C
ELECTRICAL CHARACTERISTICS
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
V
F
SYMBOL
Maximum Instantaneous Forward Voltage at 2.0A DC Volts
UNITSFM5821A-W-S-V50
.45
NOTES :1. Thermal Resistance (Junction to Ambient).
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
3. Also available in DO-214AC (SMA) & DO-214AA (SMB) package.
4. Tin plating.
2004-5
REV: O
Maximum Average Reverse Current
at Rated DC Blocking Voltage I
R
mAmps0.2
15
@T
J
= 25
o
C
@T
J
= 100
o
CmAmps
@V
R
= 12V 10 uAmps
@T
J
= 25
o
C
@T
J
= 125
o
C.375
Maximum Instantaneous Forward Voltage at 4.0A DC .53@T
J
= 25
o
C
@T
J
= 125
o
C .51
V
F
Mounting Pad Layout
Dimensions in inches and (millimeters)
0.060 MIN.
(1.52 MIN.)
0.052 MIN.
(1.32 MIN.)
0.220
0.094 MAX.
(2.38 MAX.)
(5.58) REF
RECTRON
RECTRON
RATING AND CHARACTERISTIC CURVES ( FM5821A-W-S-V50 )
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
LEAD TEMPERATURE, ( )
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0 25 50 75 100 125 150 175
4
3
2
1
0
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE, ( V )
1000
800
600
400
200
100
80
60
20
10.1 .4 1.0 4 10 40
TJ = 25
FIG. 5 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
TJ = 25
Pulse Width = 300uS
1% Duty Cycle
INSTANTANEOUS FORWARD VOLTAGE, (V)
.2 .3 .4 .5 .6 .7 .8 .9
.1
1.0
10
20
FIG. 2 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (mA)
T
J
= 125
T
J
= 75
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
0 20 40 60 80 100 120 140
.001
.01
.1
1.0
10
FIG. 3 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLE AT 60Hz
1 2 5 10 20 50 100
80
70
60
50
40
30
20
10
TL = 75
8.3ms Single Half Sine-Wave
(JEDEC Method)
FORWARD SURGE CURRENT
P.C.B Mounted on
0.4X0.4"(10X10mm)
copper pad areas
