PD 10020-E
Series PVA13
Microelectronic
Power IC Relay
Single-Pole, 300mA, 0-100V AC/DC
BOSFET® Photovoltaic Relay
Part Identification
Part Number Operating Sensitivity Off-State
Voltage (AC/DC) Resistance
PVA1352 108 Ohms
0 – 100V 5 mA
PVA1354 1010 Ohms
(BOSFET is a trademark of International Rectifier)
Replaced by PV A13N
OBSOLETE
General Description
The Photov oltaic AC Rela y (PVA) is a single-pole, normally
open solid state replacement for electro-mechanical relays
used for general purpose switching of analog signals. It
utilizes as an output switch a unique bidirectional (AC or
DC) MOSFET power IC termed a BOSFET. The BOSFET is
controlled by a photovoltaic generator of novel construc-
tion, which is energized by radiation from a dielectrically
isolated light emitting diode (LED).
The PVA o vercomes the limitations of both conventional
and reed electromechanical relays by offering the solid
state advantages of long life, high operating speed, low
pic k-up power , bounce-free operation, low thermal voltages
and miniaturization. These adv antages allow product
improvement and design innovations in many applications
such as process control, multiplexing, telecommunications,
automatic test equipment and data acquisition.
The PVA can s witch analog signals from thermocouple
lev el to 100 v olts peak A C or DC polarity. Signal frequen-
cies into the RF range are easily controlled and switching
rates up to 2kHz are achievable. The extremely small
thermally generated offset voltages allow increased
measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVA. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC chip
has input circuitry for fast turn-off and gate protection
functions. This section of the BOSFET chip utilizes both
bipolar and MOS technology to form NPN transistors, P-
channel MOSFETs, resistors, diodes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloy ed multijunction structure. The
excellent current conversion efficiency of this technique
results in the very fast response of the PVA microelec-
tronic power IC relay.
This advanced semiconductor technology has created a
radically new control device. Designers can now develop
switching systems to new standards of electrical perfor-
mance and mechanical compactness.
PV A13 Features
BOSFET Power IC ■■
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1010 Operations ■■
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300µsec Operating Time ■■
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0.2µV olt Thermal Offset ■■
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3 milliwatts Pick-Up Power ■■
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1000V/µsec dv/dt ■■
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Bounce-Free ■■
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8-pin DIP Package ■■
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-40°C to 85°C ■■
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UL recognized ■■
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Series PVA13 BOSFET® Photovoltaic Relay
Replaced by PV A13N
OBSOLETE
INPUT CHARACTERISTICS PVA1352 PVA1354 Units
Minimum Control Current (see figures 1 and 2) DC
For 200mA Continuous Load Current 2.0 mA@25°C
For 250mA Continuous Load Current 5.0 mA@40°C
For 125mA Continuous Load Current 5.0 mA@85°C
Maximum Control Current for Off-State Resistance at 25°C 10 µA(DC)
Control Current Range (Caution: current limit input LED. See figure 6) 2.0 to 25 mA(DC)
Maximum Reverse Voltage 7.0 V(DC)
Electrical Specifications (-40°C ≤ TA ≤ +85°C unless otherwise specified)
GENERAL CHARACTERISTICS (PVA1352 and PVA1354) Units
Dielectric Strength: Input-Output 2500 VRMS
Insulation Resistance: Input-Output @ 90VDC 1012 @ 25°C - 50% RH Ω
Maximum Capacitance: Input-Output 1.0 pF
Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.) +260
Ambient Temperature Range: Operating -40 to +85 °C
Storage -40 to +100
OUTPUT CHARACTERISTICS PVA1352 PVA1354 Units
Operating Voltage Range 0 to ± 100 V(peak)
Maxiumum Load Current 40°C (see figures 1and 2) 315 mA(DC)
Response Ti me @25°C (see figures 7 and 8)
Maximum T(on) @ 12mA Control, 50 mA Load, 50 VDC 300 µs
Maximum T(off) @ 12mA Control, 50 mA Load, 50 VDC 50 µs
Maximum On-state Resistance 25°C(Pulsed) (figure 4) 50 mA Load, 5mA Control 5Ω
Minimum Off-state Resistance 25°C @ 80 VDC (see figure 5) 1081010 Ω
Maximum Thermal Offset Voltage @ 5.0mA Control 0.2 µvolts
Minimum Off-State dv/dt 1000 V/µs
Output Capacitance (see figure 9) 15 pF @ 50VDC
Series PVA13 BOSFET® Photovoltaic Relay
Replaced by PV A13N
OBSOLETE
Max. Load Current (mA)
Figure 1. Current Derating Curves Figure 2. Typical Control Current Requirements
Figure 3.Typical On Characteristics Figure 4. Typical On-Resistance
RDD(on) (Ω)
ILED (mA)
Ambient Temperature (°C)
Max. Load Current (mA)
Ambient Temperature (°C)
VDD (volts)
Load Current (mA)
Series PVA13 BOSFET® Photovoltaic Relay
Replaced by PV A13N
OBSOLETE
IDOff/IDOff 25°C
Figure 5. Normalized Off-State Leakage Figure 6. Input Characteristics
(Current Controlled)
Figure 7.Typical Delay Times Figure 8. Delay Time Definitions
LED Forward Voltage Drop (Volts DC)
Input Current (mA)
Ambient Temperature (°C)
ILED (mA)
Delay Time (microseconds)
Series PVA13 BOSFET® Photovoltaic Relay
Replaced by PV A13N
OBSOLETE
Figure 9. T ypical Output Capacitance
Typical Capacitance (picofarads)
VDD Drain to Drain Voltage
Wiring Diagram
Series PVA13 BOSFET® Photovoltaic Relay
Replaced by PV A13N
OBSOLETE
Case Outline
(Dimensions in millimeters (inches))
Mechanical Specifications:
Package: 8-pin DIP
Tolerances: .015 (.38) unless otherwise specified
Case Material: molded epoxy
Weight: .07 oz. (2 gr.)
12/6/2000
