TSM2N7002ED 1-5 2004/12 rev. B
TSM2N7002ED
50V Dual N-Channel Enhancement Mode MOSFET
VDS = 50V
RDS (on), Vgs @ 10V, Ids @ 250mA = 3
RDS (on), Vgs @ 5V, Ids @ 50mA = 4
Ordering Information
Part No. Packing Package
TSM2N7002EDCU6 T & R (3kpcs/Rell) SOT-363
Features
Dual N-channel in package.
Advanced trench process technology
High density cell design for ultra low on-resistance
High input impedance
High speed switching
No minority carrier storage time
CMOS logic compatible input
No secondary breakdown
Compact and low profile SOT-363 package
Block Diagram
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGS ± 20 V
Continuous Drain Current ID 250 mA
Pulsed Drain Current IDM 1.0 A
Ta = 25 oC 200 Maximum Power Dissipation
Ta = 75 oC
PD
150
mW
Operating Junction Temperature TJ +150
oC
Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC
Thermal Performance
Parameter Symbol Limit Unit
Lead Temperature (1/8” from case) TL 5 S
Junction to Ambient Thermal Resistance (PCB mounted) Rθja 625
oC/W
Note: Surface mounted on FR4 board t<=5sec.
Pin assignment:
1. Source (2) 6. Drain (2)
2. Gate (2) 5. Gate (1)
3. Drain (1) 4. Source (1)
TSM2N7002ED 2-5 2004/12 rev. B
Electrical Characteristics (Single Channel)
Tj = 25 oC unless otherwise noted
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage VGS = 0V, ID = 10uA BVDSS 50 -- -- V
Drain-Source On-State Resistance VGS = 10V, ID = 250mA RDS(ON) -- -- 3
Drain-Source On-State Resistance VGS = 5V, ID = 50mA RDS(ON) -- -- 4
Ω
Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 1.0 2.0 2.5 V
Zero Gate Voltage Drain Current VDS = 50V, VGS = 0V IDSS -- -- 1.0 uA
Gate Body Leakage VGS = ± 20V, VDS = 0V IGSS -- -- ± 100 nA
On-State Drain Current VDS ≧ 7V, VGS = 10V ID(ON) 500 -- -- mA
Forward Transconductance VDS = 7V, ID = 200mA gfs 80 -- -- mS
Dynamic *
Turn-On Delay Time TD(ON) -- 7.5 20
Turn-On Rise Time tr -- 6 --
Turn-Off Delay Time TD(OFF) -- 7.5 20
Turn-Off Fall Time
VDD = 30V,
ID = 100mA, VGEN = 10V,
RG = 10Ω
tf -- 3 --
nS
Input Capacitance Ciss -- 19 50
Output Capacitance Coss -- 10 25
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Crss -- 3 5
pF
Source-Drain Diode
Max. Diode Forward Current IS -- -- 115 mA
Diode Forward Voltage IS = 115mA, VGS = 0V VSD -- 0.76 1.5 V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
* Guaranteed by design, not subject to production testing.
TSM2N7002ED 3-5 2004/12 rev. B
Typical Characteristics Curve - Single Channel (Ta = 25 oC unless otherwise noted)
Gate to source voltage (V)
Drain to source voltage (V) Drain current (A)
Junction temperature (oC)
Gate
–
source threshold volta
g
e
(
V
)
Ca
p
acitance
(p
F
)
Drain to source resistance
(
)
Drain Current (A)
Drain to source voltage (V)
Drain Current (A)
Junction temperature (oC)
Drain –source breakdown voltage (V)
Output Characteristic Transfer Characteristics
Rds(on) Variation with Drain Current Capacitance
Vds breakdown with Temperature Vgs(th) with Temperature
TSM2N7002ED 4-5 2004/12 rev. B
Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
Drain to source current (A) Body diode forward voltage (V)
Square wave pulse duration (S)
Drain-source voltage (V)
Total gate charge (nC)
Transconductance (S)
Source-drain Current (A)
Drain Current (A)
Gate
–
source volta
g
e
(
V
)
Transient thermal impedance r
(
t
)
Transconductance Variation
Normalized Thermal Transient Impedance Curve
Gate Charge Maximum Safe Operating Area
Body Diode Forward Voltage
TSM2N7002ED 5-5 2004/12 rev. B
SOT-363 Mechanical Drawing
SOT-363 DIMENSION
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 0.80 1.10 0.031 0.043
A1 -- 0.10 -- 0.004
bp 0.10 0.30 0.004 0.012
C 0.10 0.25 0.004 0.010
D 1.80 2.20 0.071 0.087
E 1.15 1.35 0.045 0.053
e 1.30 (typ) 0.052 (typ)
e1 0.65 (typ) 0.026(typ)
He 2.00 2.20 0.079 0.087
Lp 0.10 0.3 0.004 0.012
Q 0.20 (typ) 0.008 (typ)
W 0.20 (typ) 0.008 (typ)
Θ 10o (typ) 10o (typ)
