Switching and General Purpose Transistors INGLOZ , 2NSLIG (SILICON) (JAN2N3253 AVAILABLE) 2N3444 CASE 31 (TO-5) MAXIMUM RATINGS Collector connected to case Vero = 30-50 V Io =I1A f; = 175-200 MHz NPN silicon annular transistors for high-current saturated switching and core driver applications. Rating Symbol | 2N3252 |2N3253|2N3444} Unit Colector-Base Voltage Vop 60 vi) 80 Vde Collector-Emitter Voltage VCEO 30 40 50 Vde Emitter-Base Voltage Veg ____ 56 Vde Total Device Dissipation Pp 25C Case Temperature <5 Watts Derate above 25C _ 28.6_ mWw/C Total Device Dissipation Pp 25C Ambient Temperature DOO Watt Derate above 25C a SOOO mW/C Junction Operating Temperature Range Ty _ -65 to +200 _> C Storage Temperature Range Tote ~ - 65 to +200 _> C 93c 35 C/W Thermal Resistance: 934 0.175 C/mw SWITCHING CHARACTERISTICS Characteristic Symbol] Min | Max { Unit Output Capacitance Cop pF (Voz = 10 Vde, Ig = 0,f = 100 kHz) _ 12 Input Capacitance Ciy pF (Vpp = 0.5 Vde, Ip = 0, f = 100 kHz) _ 80 Current Gain-Bandwidth Product fp MHz (Ig = 50 mAdc, Ver = 10 Vdc, f = 100 MHz) 2N3252 200 _ 2N3253, 2N3444 175 Total Control Charge Qr nc (Ig = 500 mAde, Iq, = 50 mAdc, Voc = 30 V) _ 5 Delay Time Ig = 500 mAdc, ly = 50 mAdc tg _ 15 ns Rise Time Voc = 30 V, V; = 2V 2N3252 t _ 30 ns ce BE 2N3253, 2N3444 x 35 Storage Time I, = 500 mAdc, Ip1 = Ino = 50 mAdc ts _ 40 ns Fall Time Voc = 30V te _- 30 ns 8-214