May 2010 Doc ID 4135 Rev 5 1/8
8
TIP142T
TIP147T
Complementary power Darlington transistors
Features
Monolithic Darlington configuration
Integrated antiparallel collector-emitter diode
Application
Linear and switching industrial equipment
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage.
Figure 1. Internal schematic diagrams
TO-220
123
TA B
R1 typ. = 5 kΩ
R2 typ. = 60 Ω
R1 typ. = 8 kΩ
R2 typ. = 100 Ω
Table 1. Device summary
Part number Marking Polarity Package Packaging
TIP142T TIP142T NPN TO-220 Tube
TIP147T TIP147T PNP
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Absolute maximum ratings TIP142T, TIP147T
2/8 Doc ID 4135 Rev 5
1 Absolute maximum ratings
Note: For PNP type voltage and current are negative.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 100 V
VCEO Collector-emitter voltage (IB = 0) 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
ICCollector current 10 A
ICM Collector peak current 20 A
IBBase current 0.5 A
PTOT Total dissipation at Tcase = 25 °C 90 W
TSTG Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case __max 1.4 °C/W
TIP142T, TIP147T Electrical characteristics
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2 Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0) VCB = 100 V 1 mA
ICEO
Collector cut-off current
(IB = 0) VCE = 50 V 2 mA
IEBO
Emitter cut-off current
(IC = 0) VEB = 5 V 2 mA
VCEO(sus)(1)
1. Pulse test: pulse duration 300 µs, duty cycle 2 %.
Note: For PNP type voltage and current are negative.
Collector-emitter
sustaining voltage
(IB = 0)
IC = 30 mA 100 V
VCE(sat)(1) Collector-emitter
saturation voltage
IC = 5 A IB = 10 mA
IC = 10 A IB = 40 mA
2
3
V
V
VBE(on)(1) Base-emitter on voltage IC = 10 A VCE = 4 V 3 V
hFE(1) DC current gain IC = 5 A VCE = 4 V
IC = 10 A VCE = 4 V
1000
500
ton
toff
Resistive load
Turn-on time
Turn-off time
IC = 10 A RL = 3 Ω
IB1 = -IB2 = 40 mA
0.9
4
µs
µs
Electrical characteristics TIP142T, TIP147T
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2.1 Test circuits
Figure 2. Resistive load switching test circuit (NPN type)
1. Fast electronic switch
2. Non-inductive resistor
Figure 3. Resistive load switching test circuit (PNP type)
1. Fast electronic switch
2. Non-inductive resistor
TIP142T, TIP147T Package mechanical data
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3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Package mechanical data TIP142T, TIP147T
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TO-220 type A mechanical data
Dim mm
Min Typ Max
A 4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.480.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F1.231.32
H1 6.20 6.60
J1 2.40 2.72
L1314
L1 3.50 3.93
L20 16.40
L3028.90
P3.75 3.85
Q 2.65 2.95
0015988_Rev_S
TIP142T, TIP147T Revision history
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4 Revision history
Table 5. Document revision history
Date Revision Changes
21-Jun-2004 4
20-May-2010 5 Technology change from epitaxial base to planar base island.
TIP142T, TIP147T
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