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Application Specific Discretes
A.S.D.
TPI8011N
TPI12011N
August 2001- Ed : 3A
Tip
GND
GND
Ring
Tip
GND
GND
Ring
1
2
3
45
6
7
8
SCHEMATIC DIAGRAM
■BIDIRECTIONAL TRIPLE CROWBAR
PROTECTION.
■PEAK PULSE CURRENT :
IPP = 30 A , 10/1000 µs.
■BREAKDOWN VOLTAGE:
TPI80xxN : 80V
TPI120xxN : 120V.
■AVAILABLE IN SO-8 PACKAGES.
■LOW DYNAMIC BREAKOVER VOLTAGE :
TPI80N : 150V
TPI120 : 200V
FEATURES
SO-8
Dedicated devices for ISDN interface and high
speed data telecom line protection. Equivalent to
a triple TRISILwith low capacitance.
These devices provide :
-low capacitance from lines to ground, allowing
high speed transmission without signal
attenuation.
-good capacitance balance between lines in
order to ensure longitudinal balance.
-fixed breakdown voltage in both common and
differential modes.
-the same surge current capability in both
common and differential modes.
-A particular attention has been given to the
internal wire bonding. The “4-point”
configuration ensures a reliable protection,
eliminating overvoltages introduced by the
parasitic inductances of the wiring (Ldi/dt),
especially for very fast transient overvoltages.
DESCRIPTION
CCITT K17 -K20 10/700 µs 1.5 kV
5/310 µs38A
VDE 0433 10/700 µs2kV
5/310 µs50A
VDE 0878 1.2/50 µs 1.5 kV
1/20 µs40A
CNET 0.5/700µs 1.5 kV
0.2/310µs38A
COMPLIES WITH THEFOLLOWING STANDARDS:
TRIPOLAR PROTECTION
FOR ISDN INTERFACES
TM: ASD is a trademark of STMicroelectronics.
TPI8011N/TPI12011N
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Symbol Parameter Value Unit
Rth (j-a) Junction toambient SO-8 170 °C/W
THERMAL RESISTANCES
100
50
%I
PP
tt
rp
0t
Symbol Parameter Value Unit
IPP Peak pulse current (see note 1) 10/1000 µs
5/320 µs
2/10 µs
30
40
90
A
ITSM Non repetitive surge peakon-state
current (F = 50 Hz). tp = 10 ms
t=1s 8
3.5 A
Tstg
TjStorage temperature range
Maximum junction temperature - 55 to + 150
150 °C
TLMaximum lead temperature for soldering during 10s 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb =25°C)
Note 1 : Pulse waveform :
10/1000µst
r
=10µst
p
=1000µs
5/310µst
r
=5µst
p
=310µs
2/10µst
r
=2µst
p
=10µs
TPI8011N/TPI12011N
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Types
IRM @V
RM VBR @I
RV
BO VBO
dyn. IBO IH
max. min. max. typ. max. min.
note1 note2 note1 note3
µAV VmAV VmAmA
TPI8011N 10 70 80 1 120 150 800 150
TPI12011N 10 105 120 1 180 200 800 150
ELECTRICAL CHARACTERISTICS (Tamb =25°C)
Symbol Parameter
VRM Stand-off voltage
IRM Leakage current
VBR Breakdown voltage
VBO Breakover voltage
IHHolding current
IBO Breakover current
IPP Peak pulse current
VFForward Voltage Drop
CCapacitance
Note 1 : See the reference test circuit 1.
Note 2 : Surge test according to CCITT 1.5kV,10/700 µs between Tip or Ring and ground.
Note 3 : See functional holding current test circuit2.
CAPACITANCES CHARACTERISTICS
TPIxx
LINE A
LINE B
LINE A
LINE B
CA
CB
CONFIGURATION CA(pF)
max CB(pF)
max CA-C
B(pF)
max
VA=1V
VB=56V 70 50 30
VA= 56V
VB=1V 50 70 30
TPI8011N/TPI12011N
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REFERENCE TEST CIRCUIT 1 :
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2 :
R
-V
P
V
BAT = - 48 V
Surge generator
D.U.T.
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
VOUT Selection
- Device with VBO <200 Volt
-V
OUT = 250 VRMS,R
1= 140 Ω.
- Device with VBO ≥200 Volt
-V
OUT = 480 VRMS,R
2= 240 Ω.
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the IHvalue by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A, 10/1000 µs.
3) The D.U.T will come back off-state within 50 ms max.
TPI8011N/TPI12011N
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1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
0
1
2
3
4
5
6
7
8
9
10 I (A)TSM
F=50Hz
Tj initial=25°C
t(s)
Fig.1 : Surgepeakcurrentversusoverloadduration.
APPLICATION NOTE.
4- point structure lay-out.
1) Connect pins 2, 3, 6 and 7 to ground in or-
der to guarantee a good surge current capabil-
ity for long duration disturbances.
2) In order totake advantageof the “4-point”
structure of the TPIxxxN, the Tip and Ring
lines have to cross the device. Inthis case, the
device will eliminatethe overvoltages gener-
ated by the parasitic inductances ofthe wiring
(Ldi/dt), especially for very fast transients.
1
2
3
45
6
7
8
Tip
GND
Ring
Tip
GND
Ring
IN
IN
OUT
OUT
1 - U INTERFACE PROTECTION
APPLICATION CIRCUITS :
2 - S INTERFACE PROTECTION
This component usesan intemal structure resulting in symetrical characteristics with a good balanced
behaviour. Its topology ensures the same breakdown voltage level for positive and negative surges in
differential and common mode .
TPIxx
A
B
RorPTC
RorPTC
GND
A
B
RorPTC
RorPTC
GND
TPIxx
A
B
RorPTC
RorPTC
GND
TPIxx
TPI8011N/TPI12011N
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ORDER CODE
TPI 80 1 1 N RL
Bidirectional
Breakdown Voltage
Version
Revision
Package:
1 = SO-8 Plastic
Packaging:
RL = Tape and reel
= Tube
Package Type Marking
SO-8 TPI8011N
TPI12011N TP80N
TP120N
MARKING
1
2
3
45
6
7
8
Tip
GND
GND
Ring
Tip
GND
GND
Ring
SO-8 Plastic
CONNECTION DIAGRAM
TPI8011N/TPI12011N
7/7
Information furnished is believedtobe accurate and reliable. However,STMicroelectronics assumes noresponsibility for the consequencesof
use of such informationnor forany infringementof patents or otherrights of third parties which may resultfrom its use. Nolicense is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics
2001 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
SO-8 Plastic
REF. DIMENSIONS
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.50 0.020
c1 45°(typ)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8°(max)
Packaging : Products supplied inantistatic tubes
or tape and reel.
Weight : 0.08g
