FDMA1028NZ tm Dual N-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package x 3.7 A, 20V. RDS(ON) = 68 m: @ VGS = 4.5V RDS(ON) = 86 m: @ VGS = 2.5V solution for dual switching requirements in cellular handset and other ultra-portable applications. x Low profile - 0.8 mm maximum - in the new package It low on-state resistance for minimum conduction losses. MicroFET 2x2 mm x HBM ESD protection level > 2kV (Note 3) The MicroFET 2x2 package offers exceptional thermal x RoHS Compliant performance for its physical size and is well suited to Free from halogenated compounds and antimony oxides features two independent N-Channel MOSFETs with linear mode applications. PIN 1 S1 G1 D1 D2 D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 D1 G2 S2 MicroFET 2x2 Absolute Maximum Ratings Symbol VDS TA=25oC unless otherwise noted Parameter Drain-Source Voltage VGS Gate-Source Voltage Drain Current ID - Continuous V r12 V A 3.7 (Note 1a) 1.4 (Note 1b) 0.7 6 Power Dissipation for Single Operation TJ, TSTG Units 20 (Note 1a) - Pulsed PD Ratings Operating and Storage Junction Temperature Range -55 to +150 W qC Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) qC/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 028 FDMA1028NZ 7'' 8mm 3000 units 20 Fairchild Semiconductor Corporation FDMA1028NZ Rev B FDMA1028NZ Dual N-Channel PowerTrench MOSFET t May 20 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 PA VGS = 0 V, ID = 250 PA, Referenced to 25qC 20 V mV/qC 15 Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 PA Gate-Body Leakage VGS = 12 V, VDS = 0 V 10 PA On Characteristics (Note 2) VGS(th) 'VGS(th) 'TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance gFS Forward Transconductance ID = 250 PA VDS = VGS, ID = 250 PA, Referenced to 25qC 0.6 1.0 1.5 V mV/qC -4 VGS = 4.5 V, ID = 3.7 A VGS = 2.5 V, ID = 3.3 A VGS= 4.5 V, ID = 3.7 A, TJ=125qC 37 50 53 VDS = 10 V, ID = 3.7 A 16 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 340 pF 80 pF 60 pF 68 86 90 m: Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 : ID = 3.7 A, 8 16 8 16 ns ns 14 26 ns 3 6 ns 4 6 nC 0.7 nC 1.1 nC FDMA1028NZ Rev B FDMA1028NZ Dual N-Channel PowerTrench MOSFET Electrical Characteristics 1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the user's board design. (a) RTJA = 86 C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RTJA = 173 C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RTJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For dual operation. (d) RTJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. a)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. b)173 oC/W when mounted on a minimum pad of 2 oz copper. c)69 oC/W when mounted on a 1 in2 pad of 2 oz copper. d)151 oC/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDMA1028NZ Rev B FDMA1028NZ Dual N-Channel PowerTrench MOSFET Notes: 6 2 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V VGS = 4.5V ID, DRAIN CURRENT (A) 5 3.5V 3.0V 4 3 2 1 1.5V 0 0.2 0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V) 1 1.4 2.5V 1.2 3.0V 3.5V 4.0V 1 1.2 0 Figure 1. On-Region Characteristics. 4.5V 1 2 3 4 ID, DRAIN CURRENT (A) 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.13 1.6 ID = 3.7A VGS = 4.5V 1.5 ID = 1.85A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 0.8 0 1.4 1.3 1.2 1.1 1 0.9 0.8 0.11 0.09 o 0.07 TA = 125 C 0.05 o TA = 25 C 0.7 0.6 0.03 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 6 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 5 ID, DRAIN CURRENT (A) VGS = 2.0V 1.8 4 3 2 o TA = 125 C -55oC 1 o 10 1 0.1 TA = 125oC 0.01 o 25 C o 0.001 -55 C 25 C 0.0001 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1028NZ Rev B FDMA1028NZ Dual N-Channel PowerTrench MOSFET Typical Characteristics 10 500 VDS = 5V VGS, GATE-SOURCE VOLTAGE (V) ID = 3.7A f = 1MHz VGS = 0 V 15V 8 400 CAPACITANCE (pF) 10V 6 4 300 200 Coss 2 100 0 0 Crss 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 Figure 7. Gate Charge Characteristics. RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC 1 VGS = 4.5V SINGLE PULSE RTJA = 173C/W TA = 25C 0.1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RTJA = 173C/W TA = 25C 40 30 20 10 0.01 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 50 P(pk), PEAK TRANSIENT POWER (W) 10 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) Ciss 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RTJA(t) = r(t) * RTJA RTJA =173 C/W 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 0.01 t2 TJ - TA = P * RTJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA1028NZ Rev B FDMA1028NZ Dual N-Channel PowerTrench MOSFET Typical Characteristics FDMA1028NZ Dual N-Channel PowerTrench MOSFET Dimensional Outline and Pad Layout FDMA1028NZ Rev B tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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