HY57V28820HCLT-S - SK Hynix - Datasheet.Directory

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 1

0.1 : Hynix Change

0.2 : Burst read single write mode correction

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev. 0.2 / Aug. 2001

DESCRIPTION

The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory

applications which require large memory density and high bandwidth. HY57V28820HC(L)T is organized as 4banks of

4,194,304x8.

HY57V28820HC(L)T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and

outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very

high bandwidth. All input and output voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write

cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count

sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate

command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined

design is not restricted by a `2N` rule.)

FEATURES

• Single 3.3±0.3V power supply

• All device pins are compatible with LVTTL interface

• JEDEC standard 400mil 54pin TSOP-II with 0.8mm

of pin pitch

• All inputs and outputs referenced to positive edge of

system clock

• Data mask function by DQM

• Internal four banks operation

• Auto refresh and self refresh

• 4096 refresh cycles / 64ms

• Programmable Burst Length and Burst Type

- 1, 2, 4, 8 or Full Page for Sequential Burst

- 1, 2, 4 or 8 for Interleave Burst

• Programmable CAS Latency ; 2, 3 Clocks

ORDERING INFORMATION

Part No. Clock Frequency Power Organization Interface Package

HY57V28820HCT-6 166MHz

Normal

4Banks x 4Mbits x 8 LVTTL 400mil 54pin TSOP II

HY57V28820HCT-K 133MHz

HY57V28820HCT-H 133MHz

HY57V28820HCT-8 125MHz

HY57V28820HCT-P 100MHz

HY57V28820HCT-S 100MHz

HY57V28820HCLT-6 166MHz

Low

power

HY57V28820HCLT-K 133MHz

HY57V28820HCLT-H 133MHz

HY57V28820HCLT-8 125MHz

HY57V28820HCLT-P 100MHz

HY57V28820HCLT-S 100MHz

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 3

PIN CONFIGURATION

VSS

DQ7

VSSQ

NC

DQ6

VDDQ

NC

DQ5

VSSQ

NC

DQ4

VDDQ

NC

VSS

NC

DQM

CLK

CKE

NC

A11

A9

A8

A7

A6

A5

A4

VSS

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

54

53

52

51

50

49

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

VDD

DQ0

VDDQ

NC

DQ1

VSSQ

NC

DQ2

VDDQ

NC

DQ3

VSSQ

NC

VDD

NC

/WE

/CAS

/RAS

/CS

BA0

BA1

A10/AP

A0

A1

A2

A3

VDD

54pin TSOP II

400mil x 875mil

0.8mm pin pitch

PIN DESCRIPTION

PIN PIN NAME DESCRIPTION

CLK Clock The system clock input. All other inputs are registered to the SDRAM on the

rising edge of CLK

CKE Clock Enable Controls internal clock signal and when deactivated, the SDRAM will be one

of the states among power down, suspend or self refresh

CS Chip Select Enables or disables all inputs except CLK, CKE and DQM

BA0, BA1 Bank Address Selects bank to be activated during RAS activity

Selects bank to be read/written during CAS activity

A0 ~ A11 Address Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA9

Auto-precharge flag : A10

RAS, CAS, WE

Row Address Strobe, Col-

umn Address Strobe, Write

Enable

RAS, CAS and WE define the operation

Refer function truth table for details

DQM Data Input/Output Mask Controls output buffers in read mode and masks input data in write mode

DQ0 ~ DQ7 Data Input/Output Multiplexed data input / output pin

VDD/VSS Power Supply/Ground Power supply for internal circuits and input buffers

VDDQ/VSSQ Data Output Power/Ground Power supply for output buffers

NC No Connection No connection

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 4

FUNCTIONAL BLOCK DIAGRAM

4Mbit x 4banks x 8 I/O Synchronous DRAM

State Machine

A0

A1

A11

BA0

BA1

Address buffers

Address

Registers

Mode Registers

Row

Pre

Decoders

Column

Pre

Decoders

Column Add

Counter

Row active

Column

Active

Burst

Counter

Data Out Control

CAS Latency

X decoders

Internal Row

counter

DQ0

DQ1

DQ6

DQ7

refresh

Self refresh logic

& timer

Pipe Line Control

I/O Buffer & Logic

Bank Select

Sense AMP & I/O Gate

CLK

CKE

CS

RAS

CAS

WE

DQM

X decoders

Memory

Cell

Array

Y decoders

X decoders

4Mx8 Bank 1

4Mx8 Bank 0

4Mx8 Bank 2

4Mx8 Bank3

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 5

ABSOLUTE MAXIMUM RATINGS

Note : Operation at above absolute maximum rating can adversely affect device reliability.

DC OPERATING CONDITION (TA=0 to 70°C)

Note :

1.All voltages are referenced to VSS = 0V

2.VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.

3.VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration.

AC OPERATING TEST CONDITION (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V)

Note :

1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output

load circuit

Parameter Symbol Rating Unit

Ambient Temperature TA0 ~ 70 °C

Storage Temperature TSTG -55 ~ 125 °C

Voltage on Any Pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V

Voltage on VDD relative to VSS VDD, VDDQ -1.0 ~ 4.6 V

Short Circuit Output Current IOS 50 mA

Power Dissipation PD1W

Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 °C ⋅ Sec

Parameter Symbol Min Typ Max Unit Note

Power Supply Voltage VDD, VDDQ 3.0 3.3 3.6 V 1

Input High voltage VIH 2.0 3.0 VDDQ + 0.3 V 1,2

Input Low voltage VIL -0.3 0 0.8 V 1,3

Parameter Symbol Value Unit Note

AC Input High / Low Level Voltage VIH / VIL 2.4/0.4 V

Input Timing Measurement Reference Level Voltage Vtrip 1.4 V

Input Rise / Fall Time tR / tF 1 ns

Output Timing Measurement Reference Level Voltage Voutref 1.4 V

Output Load Capacitance for Access Time Measurement CL50 pF 1

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 6

CAPACITANCE (TA=25°C, f=1MHz)

OUTPUT LOAD CIRCUIT

DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)

Note :

1.VIN = 0 to 3.6V, All other pins are not under test = 0V

2.DOUT is disabled, VOUT=0 to 3.6V

Parameter Pin Symbol

-6/K/H -8/P/S

Unit

Min. Max. Min. Max.

Input Capacitance CLK CI1 2.5 3.5 2.5 4 pF

A0 ~ A11, BA0, BA1, CKE,

CS, RAS, CAS, WE, DQM

CI22.5 3.8 2.5 5 pF

Data Input / Output Capacitance DQ0 ~ DQ7 CI/O 4 6.5 4 6.5 pF

Parameter Symbol Min. Max Unit Note

Input Leakage Current ILI -1 1 uA 1

Output Leakage Current ILO -1 1 uA 2

Output High Voltage VOH 2.4 - V IOH = -2mA

Output Low Voltage VOL -0.4VIOL =+2mA

Output

Vtt=1.4V

RT=250 Ω

50pF 50pF

Output

DC Output Load Circuit AC Output Load Circuit

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 7

DC CHARACTERISTICS II (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V)

Note :

1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.

2.Min. of tRRC (Refresh RAS cycle time) is applied to HY57V28820HC(L)T-6/K/H/8/P/S which are listed on AC characteristic II.

3.HY57V28820HCT-6/K/H/8/P/S

4.HY57V28820HCLT-6/K/H/8/P/S

Parameter Symbol Test Condition

Speed

Unit Note

-6 -K -H -8 -P -S

Operating Current IDD1 Burst length=1, One bank active

tRC ≥ tRC(min), IOL=0mA 120 110 110 110 100 100 mA 1

Precharge Standby Current

in Power Down Mode

IDD2P CKE ≤ VIL(max), tCK = 15ns 2

mA

IDD2PS CKE ≤ VIL(max), tCK = ∞1

Precharge Standby Current

in Non Power Down Mode

IDD2N

CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns

Input signals are changed one time during

30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V

15

mA

IDD2NS CKE ≥ VIH(min), tCK = ∞

Input signals are stable. 15

Active Standby Current

in Power Down Mode

IDD3P CKE ≤ VIL(max), tCK = 15ns 5

mA

IDD3PS CKE ≤ VIL(max), tCK = ∞5

Active Standby Current

in Non Power Down Mode

IDD3N

CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns

Input signals are changed one time during

30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V

30

mA

IDD3NS CKE ≥ VIH(min), tCK = ∞

Input signals are stable. 20

Burst Mode Operating

Current IDD4 tCK ≥ tCK(min), IOL=0mA

All banks active

CL=3 140 120 120 120 110 110

mA 1

CL=2 150 130 130 130 110 110

Auto Refresh Current IDD5 tRRC ≥ tRRC(min), All banks active 240 220 220 200 200 200 mA 2

Self Refresh Current IDD6 CKE ≤ 0.2V

2mA3

800 uA 4

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 8

AC CHARACTERISTICS I (AC operating conditions unless otherwise noted)

Note :

1.Assume tR / tF (input rise and fall time ) is 1ns

If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter

2.Access times to be measured with input signals of 1v/ns edge rate, from 0.8v to 2.0v

If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter

Parameter Symbol

-6 -K -H -8 -P -S

Unit Note

Min Max Min Max Min Max Min Max Min Max Min Max

System Clock

Cycle Time

CAS Latency = 3 tCK3 6

1000

7.5

1000

7.5

1000

8

1000

10

1000

10

1000

ns

CAS Latency = 2 tCK2 10 7.5 10 10 10 12 ns

Clock High Pulse Width tCHW 2.5 - 2.5 - 2.5 - 3 - 3 - 3 - ns 1

Clock Low Pulse Width tCLW 2.5 - 2.5 - 2.5 - 3 - 3 - 3 - ns 1

Access Time

From Clock

CAS Latency = 3 tAC3 - 5.4 - 5.4 - 5.4 - 6 - 6 - 6 ns

2

CAS Latency = 2 tAC2 - 6 - 5.4 - 6 - 6 - 6 - 6 ns

Data-Out Hold Time tOH 2.7 - 2.7 - 2.7 - 3 - 3 - 3 - ns

Data-Input Setup Time tDS 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1

Data-Input Hold Time tDH 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1

Address Setup Time tAS 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1

Address Hold Time tAH 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1

CKE Setup Time tCKS 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1

CKE Hold Time tCKH 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1

Command Setup Time tCS 1.5 - 1.5 - 1.5 - 2 - 2 - 2 - ns 1

Command Hold Time tCH 0.8 - 0.8 - 0.8 - 1 - 1 - 1 - ns 1

CLK to Data Output in Low-Z Time tOLZ 1 - 1 - 1 - 1 - 1 - 1 - ns

CLK to Data

Output in High-Z

Time

CAS Latency = 3 tOHZ3 2.7 5.4 2.7 5.4 2.7 5.4 3 6 3 6 3 6 ns

CAS Latency = 2 tOHZ2 2.7 5.4 2.7 5.4 3 6 3 6 3 6 3 6 ns

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 9

AC CHARACTERISTICS II

Note :

1. A new command can be given tRRC after self refresh exit.

Parameter Symbol

-6 -K -H -8 -P -S

Unit Note

Min Max Min Max Min Max Min Max Min Max Min Max

RAS Cycle Time

Operation tRC 60 - 60 - 65 - 68 - 70 - 70 - ns

Auto Refresh tRRC 60 - 65 - 65 - 68 - 70 - 70 - ns

RAS to CAS Delay tRCD 18 - 15 - 20 - 20 - 20 - 20 - ns

RAS Active Time tRAS 42 100K 45 100K 45 100K 48 100K 50 100K 50 100K ns

RAS Precharge Time tRP 18 - 15 - 20 - 20 - 20 - 20 - ns

RAS to RAS Bank Active Delay tRRD 12 - 15 - 15 - 16 - 20 - 20 - ns

CAS to CAS Delay tCCD 1 - 1 - 1 - 1 - 1 - 1 - CLK

Write Command to Data-In Delay tWTL 0 - 0 - 0 - 0 - 0 - 0 - CLK

Data-In to Precharge Command tDPL 2 - 2 - 2 - 1 - 1 - 1 - CLK

Data-In to Active Command tDAL 5-4-5-4-3-3-CLK

DQM to Data-Out Hi-Z tDQZ 2 - 2 - 2 - 2 - 2 - 2 - CLK

DQM to Data-In Mask tDQM 0 - 0 - 0 - 0 - 0 - 0 - CLK

MRS to New Command tMRD 2 - 2 - 2 - 2 - 2 - 2 - CLK

Precharge to Data

Output Hi-Z

CAS Latency = 3tPROZ33-3-3-3-3-3-CLK

CAS Latency = 2tPROZ22-2-2-2-2-2-CLK

Power Down Exit Time tPDE 1 - 1 - 1 - 1 - 1 - 1 - CLK

Self Refresh Exit Time tSRE 1-1-1-1-1-1-CLK1

Refresh Time tREF - 64 - 64 - 64 - 64 - 64 - 64 ms

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 10

IBIS SPECIFICATION

IOH Characteristics (Pull-up) 66MHz and 100MHz Pull-up

Voltage 100MHz

Min

100MHz

Max

66MHz

Min

(V) I (mA) I (mA) I (mA)

3.45 -2.4

3.3 -27.3

3.0 0.0 -74.1 -0.7

2.6 -21.1 -129.2 -7.5

2.4 -34.1 -153.3 -13.3

2.0 -58.7 -197.0 -27.5

1.8 -67.3 -226.2 -35.5

1.65 -73.0 -248.0 -41.1

1.5 -77.9 -269.7 -47.9

1.4 -80.8 -284.3 -52.4

1.0 -88.6 -344.5 -72.5

0.0 -93.0 -502.4 -93.0

IOL Characteristics (Pull-down) 66MHz and 100MHz Pull-down

Voltage 100MHz

Min

100MHz

Max

66MHz

Min

(V) I (mA) I (mA) I (mA)

0.0 0.0 0.0 0.0

0.4 27.5 70.2 17.7

0.65 41.8 107.5 26.9

0.85 51.6 133.8 33.3

1.0 58.0 151.2 37.6

1.4 70.7 187.7 46.6

1.5 72.9 194.4 48.0

1.65 75.4 202.5 49.5

1.8 77.0 208.6 50.7

1.95 77.6 212.0 51.5

3.0 80.3 219.6 54.2

3.45 81.4 222.6 54.9

-600

-500

-400

-300

-200

-100

0

00.511.522.533.5

Voltage (V)

I (mA)

Ioh Min (100MHz)

Ioh Min (66MHz)

Ioh Min (66 and 100MHz)

0

50

100

150

200

250

00.5 11.522.5 33.5

Voltage (V)

I (mA)

I (mA) 100 min

I (mA) 66 min

I (mA) 100 max

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 11

VDD Clamp @ CLK, CKE, CS, DQM & DQ

VDD (V) I(mA)

0.0 0.0

0.2 0.0

0.4 0.0

0.6 0.0

0.7 0.0

0.8 0.0

0.9 0.0

1.0 0.23

1.2 1.34

1.4 3.02

1.6 5.06

1.8 7.35

2.0 9.83

2.2 12.48

2.4 15.30

2.6 18.31

VSS Clamp @ CLK, CKE, CS, DQM & DQ

VSS (V) I (mA)

-2.6 -57.23

-2.4 -45.77

-2.2 -38.26

-2.0 -31.22

-1.8 -24.58

-1.6 -18.37

-1.4 -12.56

-1.2 -7.57

-1.0 -3.37

-0.9 -1.75

-0.8 -0.58

-0.7 -0.05

-0.6 0.0

-0.4 0.0

-0.2 0.0

0.0 0.0

0

5

10

15

20

0123

Voltage

mA

I (mA)

Minimum VDD clamp current

(Referenced to VDD)

-60

-50

-40

-30

-20

-10

0

-3 -2.5 -2 -1.5 -1 -0.5 0

Voltage

mA

I (mA)

Minimum VSS clamp current

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 12

DEVICE OPERATING OPTION TABLE

HY57V28820HC(L)T-6

HY57V28820HC(L)T-K

HY57V28820HC(L)T-H

HY57V28820HC(L)T-8

HY57V28820HC(L)T-P

HY57V28820HC(L)T-S

CAS Latency tRCD tRAS tRC tRP tAC tOH

166MHz(6ns) 3CLKs 3CLKs 7CLKs 10CLKs 3CLKs 5.4ns 2.7ns

143MHz(7ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns

133MHz(7.5ns) 2CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns

CAS Latency tRCD tRAS tRC tRP tAC tOH

133MHz(7.5ns) 2CLKs 2CLKs 6CLKs 8CLKs 2CLKs 5.4ns 2.7ns

125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns

100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns

CAS Latency tRCD tRAS tRC tRP tAC tOH

133MHz(7.5ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 5.4ns 2.7ns

125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns

100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns

CAS Latency tRCD tRAS tRC tRP tAC tOH

125MHz(8ns) 3CLKs 3CLKs 6CLKs 9CLKs 3CLKs 6ns 3ns

100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns

83MHz(12ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns

CAS Latency tRCD tRAS tRC tRP tAC tOH

100MHz(10ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns

83MHz(12ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns

66MHz(15ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns

CAS Latency tRCD tRAS tRC tRP tAC tOH

100MHz(10ns) 3CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns

83MHz(12ns) 2CLKs 2CLKs 5CLKs 7CLKs 2CLKs 6ns 3ns

66MHz(15ns) 2CLKs 2CLKs 4CLKs 6CLKs 2CLKs 6ns 3ns

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 13

COMMAND TRUTH TABLE

Note :

1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high

2. X = Dont care, H = Logic High, L= Logic Low, BA=Bank Address, RA = Row Address, CA = Column Address,

Opcode=Operand Code, NOP=No Operation

3. The burst read sigle write mode is entered by programming the write burst mode bit (A9) in the mode register to a logic 1.

Command CKEn-1 CKEn CS RAS CAS WE DQM ADDR A10/

AP BA Note

Mode Register Set H X L L L L X OP code 1

No Operation H X

HXXX

XX

LHHH

Bank Active H X L L H H X RA V

Read

HXLHLHXCA

L

V

Read with Autoprecharge H

Write

HXLHLLXCA

L

V

Write with Autoprecharge H

Precharge All Banks

HXLLHLXX

HX

Precharge selected Bank LV

Burst Stop H X L H H L X X

DQM H X V X

Auto Refresh H H L L L H X X

Burst-Read-Single-

WRITE H X LLLLX A9 Pin High

(Other Pins OP code) 3

Self Refresh

Entry H L L L L H X

X

Exit L H

HXXX

X

LHHH

Precharge

power down

Entry H L

HXXX

X

LHHH

Exit L H

HXXX

X

LHHH

Clock

Suspend

Entry H L

HXXX

X

XLVVV

Exit L H X X

HY57V28820HC(L)T

4Banks x 4M x 8bits Synchronous DRAM

Rev. 0.2 / Aug. 2001 14

PACKAGE INFORMATION

400mil 54pin Thin Small Outline Package

Unit : mm(inch)