BU208 BU208A w w w. c e n t r a l s e m i . c o m HIGH VOLTAGE NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BU208, BU208A types are high voltage NPN silicon power transistors, manufactured by the multiepitaxial mesa process, designed for fast switching horizontal deflection circuits in color televisions. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICES IEBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg JC IE=10mA IC=4.5A, IB=2.0A (BU208) UNITS V 700 V 10 V 8.0 A 15 A 150 W -65 to +175 C 1.0 C/W CHARACTERISTICS: (TC=25C unless otherwise noted) TEST CONDITIONS MIN TYP VCE=1500V VEB=5.0V IC=100mA 1500 MAX 2.0 UNITS mA 100 A 700 V 10 V 5.0 IC=4.5A, IB=2.0A (BU208A) IC=4.5A, IB=2.0A 7.0 V 1.0 V 1.3 V fT ts VCE=5.0V, IC=100mA, f=5.0MHz VCC=140V, IC=4.5A, hFE=2.5 MHz 7.0 s tf LC=0.9mH, LB=3.0H 0.55 s R0 (5-October 2012) BU208 BU208A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R0 (5-October 2012) w w w. c e n t r a l s e m i . c o m