MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS
Collector-Emitter Voltage VCES 1500 V
Collector-Emitter Voltage VCEO 700 V
Emitter-Base Voltage VEBO 10 V
Continuous Collector Current IC 8.0 A
Peak Collector Current ICM 15 A
Power Dissipation PD 150 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +175 °C
Thermal Resistance JC 1.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICES V
CE=1500V 2.0 mA
IEBO V
EB=5.0V 100 μA
BVCEO IC=100mA 700 V
BVEBO I
E=10mA 10 V
VCE(SAT) I
C=4.5A, IB=2.0A (BU208) 5.0 V
VCE(SAT) I
C=4.5A, IB=2.0A (BU208A) 1.0 V
VBE(SAT) I
C=4.5A, IB=2.0A 1.3 V
fT V
CE=5.0V, IC=100mA, f=5.0MHz 7.0 MHz
ts V
CC=140V, IC=4.5A, hFE=2.5 7.0 μs
tf L
C=0.9mH, LB=3.0μH 0.55 μs
BU208
BU208A
HIGH VOLTAGE
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BU208, BU208A
types are high voltage NPN silicon power transistors,
manufactured by the multiepitaxial mesa process,
designed for fast switching horizontal deflection circuits
in color televisions.
MARKING: FULL PART NUMBER
TO-3 CASE
R0 (5-October 2012)
www.centralsemi.com
BU208
BU208A
HIGH VOLTAGE
NPN SILICON
POWER TRANSISTOR
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R2
www.centralsemi.com
R0 (5-October 2012)
