MCM6206BB - Motorola / Freescale Semiconductor

Motorola Master Selection Guide Memory Products2.8–1

Memory Products

In Brief . . . Page

Fast Static RAMs 2.8–2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Introduction 2.8–2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Synchronous 2.8–2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Asynchronous 2.8–3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Fast Static RAM Modules 2.8–4. . . . . . . . . . . . . . . . . . . . .

Flash Memory 2.8–5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Standard MobileFLASH Memory 2.8–6. . . . . . . . . . . . .

MobileFLASH Memory 2.8–6. . . . . . . . . . . . . . . . . . . . . .

Flash Component Part Nomenclature 2.8–7. . . . . . . . . . .

Motorola’s memory product portfolio has been expanded

to support a broad range of engineering applications.

Included in this portfolio are asynchronous devices with

access times of 6 ns at 256K–bit density, 6 ns at 5 V 1

Megabit density, 8 ns at 3.3 V 1 Megabit density, as well as

synchronous FSRAMs with access times as fast as 4.5 ns

and 7.5 ns.

Motorola’s Fast Static RAM Division goal is simple:

speed. All of our SRAMs are designed to provide the highest

performance, cost efficient solutions available.

Flash memory is the most cost–effective non–volatile

semiconductor memory. Motorola’s Flash products can be

easily programmed while remaining in the system.

Motorola Master Selection GuideMemory Products 2.8–2

Fast Static RAMs

Introduction

Motorola is designing the fastest, most technologically

advanced fast SRAMs. From 0.8 to 0.5 µm with access times

as fast as 5 V 6 ns 256K, 6 ns 1M, 13 ns 4M, and 8 ns

3.3 V 1M; these devices are progressively smaller , faster , and

lower cost. These SRAMs are designed to provide the highest

performance, cost efficient solutions available. Selected fast

SRAMs are also available on 2M and 8M memory modules.

Application specific memories are designed for

high–performance microprocessors that require more

specialization from memory cache than is available from

standard devices. Products include those for use with digital

signal processors as well as a variety of popular

microprocessors.

SYNCHRONOUS

Late Write RAMs

Description Organi–

zation VCC

Motorola

Part Number Pin

Count Packaging Cycle Time

(ns Max) Pro–

duction Comments

4M 256K x 18 3.3 V MCM69R818A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. HSTL I/Os.

MCM69R819A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. LVTTL I/Os.

MCM69R820A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. 2.5 V I/Os.

MCM69L818A 119 (ZP) PBGA 8.5/9/9.5

Latency Now Late write interface. Register/Latch. HSTL I/Os

MCM69L819A 119 (ZP) PBGA 8.5/9/9.5

Latency Now Late write interface. Register/Latch LVTTL I/Os.

MCM69L820A 119 (ZP) PBGA 8.5/9/9.5

Latency Now Late write interface. Register/Latch 2.5 V I/Os.

128K x 36 MCM69R736A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. HSTL I/Os.

MCM69R737A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. LVTTL I/Os.

MCM69R738A 119 (ZP) PBGA 5/6/7/8 Now Late write interface. Register/Register. 2.5 V I/Os.

MCM69L736A 119 (ZP) PBGA 8.5/9/9.5

Latency Now Late write interface. Register/Latch. HSTL I/Os.

MCM69L737A 119 (ZP) PBGA 8.5/9/9.5

Latency Now Late write interface. Register/Latch. LVTTL I/Os.

MCM69L738A 119 (ZP) PBGA 8.5/9/9.5

Latency Now Late write interface. Register/Latch. 2.5 V I/Os.

Tag RAMs

Description Organi–

zation VCC

Motorola

Part Number Pin

Count Packaging Access Time

(ns Max) Pro–

duction Comments

Tag RAMs 64K x 18 3.3 V MCM69T618 100

119 (TQ) TQFP

(ZP) PBGA 5/6/7 Now

Now 100 MHz Data/Tag RAM. For MIPS R5000, Pentium Pro and

graphics accelerators applications.

16K x 16 5 V MPC27T416 80 (TQ) TQFP 9/10/12 Now Cache tag RAM for PowerPC. 14 tag bits, 2 status bits.

16K x 15 5 V MPC27T415 80 (TQ) TQFP 9/10/12 Now Cache tag RAM for PowerPC. 12 tag bits, 3 status bits. Drop in

replacement for IDT71216.

CAMs

CAMs 16K x 64 3.3 V MCM69C432 100 (TQ) TQFP 180 ns

Match Time 4Q97 Content addressable memory for communication applications.

16K connections.

4K x 64 3.3 V MCM69C232 100 (TQ) TQFP 160 ns

Match Time Now Content addressable memory for communication applications.

4K connections.

Integrated Cache Solutions

Integrated

Cache

Slti

32K x 72 3.3 V MPC2605 241 (ZP) PBGA 66 MHz 4Q97 Integrated L2 cache for PowerPC processors.One component for

256KB, two for 512KB, and four for 1MB L2 cache solution.

Solutions 32K x 36 5 V MPC2604GA 357 (ZP) PBGA 66 MHz Now Integrated L2 cache for PowerPC processors.Two components

for 256KB, four for 512KB L2 cache solution.

Separate and Dual I/O Devices

4M 512K x 9 5 V MCM67Q909 86 (ZP) PBGA 5/6 Now General synchronous separate I/O with write pass through.

3.3 V output levels.

1M 128K x 9 5 V MCM67Q709A 86 (ZP) PBGA 5/6 Now General synchronous separate I/O with write pass through.

3.3 V output levels. Replaces the MCM67Q709.

32K x 36 3.3 V MCM69Q536 176 (TQ) TQFP 6/8/10 4Q97 Single address, separate I/O. NetRAM. Sampling now.

MCM69D536 176 (TQ) TQFP 6/8/10 4Q97 Dual address, dual I/O. NetRAM. Sampling now.

64K x 18 3.3 V MCM69Q618 100 (TQ) TQFP 6/8/10 4Q97 Single address, separate I/O. NetRAM. Sampling now.

MCM69D618 100 (TQ) TQFP 6/8/10 4Q97 Dual address, dual I/O. NetRAM. Sampling now.

Line Buffer 8K x 8 5 V MCM62X308 28 300 (J) SOJ 15/17 Now Line buffer for processing digital data. Sampling now.

Motorola Master Selection Guide Memory Products2.8–3

SYNCHRONOUS

BurstRAMs

Description Organi–

zation VCC

Motorola

Part Number Pin

Count Packaging Access Time

(ns Max) Pro–

duction Comments

4M 256K x 18 3.3 V MCM69P819 100

119 (TQ) TQFP

(ZP) PBGA 3.5/3.8/4 1Q98 Pipelined BurstRAM for servers, switches, and workstations.

XCM available now.

MCM69F819 100

119 (TQ) TQFP

(ZP) PBGA 7.5/8/8.5/11 1Q98 Flow–through BurstRAM for servers, switches, and workstations.

XCM available now.

128K x 36 3.3 V MCM69P737 100

119 (TQ) TQFP

(ZP) PBGA 3.5/3.8/4 1Q98 Pipelined BurstRAM for servers, switches, and workstations.

XCM available now.

MCM69F737 100

119 (TQ) TQFP

(ZP) PBGA 7.5/8/8.5/11 1Q98 Flow–through BurstRAM for servers, switches, and workstations.

XCM available now.

128K x 32 3.3 V MCM63P733 100 (TQ) TQFP 4/4.5/5 1Q98 133 MHz pipelined BurstRAM, for servers and notebooks.

Sampling now at 100 MHz.

MCM63F733 100 (TQ) TQFP 10/11 1Q98 75 MHz flow–through BurstRAM, for servers and datacomm.

2M 64K x 32 3.3 V MCM63P631 100

—

(TQ) TQFP

(DW) TrueDie

117 MHz

4.5/7/8 ns

Now

4Q97

117 MHz pipelined BurstRAM, for desktop PCs and

communications applications.

Pipelined BurstRAM for ultraportable computing.

MCM63PV631 100 (TQ) TQFP 133/117/66/60

MHz Now 2.5 V I/O GreenRAM. For MMX processor, notebooks, and

low–power communication applications needs.

32K x 32 3.3 V MCM63P535 — (DW) TrueDie 4.5/7/8 4Q97 Pipelined BurstRAM for ultraportable computing.

1M 64K x 18 3.3 V MCM69F618C 100 (TQ) TQFP 8.5/9/10/12 4Q97 5 V tolerant on all pins. Samples 3Q97.

MCM69P618C 100 (TQ) TQFP 4/4.5/5/6/7 4Q97 5 V tolerant on all pins. Samples 3Q97.

5 V MCM67B618A 52 (FN) PLCC 8.5/9/10/12 Now Flow–through BurstRAM for Pentium, MIPS. Not for new

designs, suggest MCM67B618B.

MCM67B618B 52 (FN) PLCC 8.5/9/10/12 4Q97 Flow–through BurstRAM for Pentium, MIPS.

MCM67C618A 52 (FN) PLCC 5/7 Now Pipelined BurstRAM for Pentium. Not for new designs, suggest

MCM67C618B.

MCM67C618B 52 (FN) PLCC 5/7 4Q97 Pipelined BurstRAM for Pentium and communication

applications.

MCM67M618A 52 (FN) PLCC 9/10/12 Now Flow–through BurstRAM for PowerPC. Not for new designs,

suggest MCM67M618B.

MCM67M618B 52 (FN) PLCC 9/10/12 4Q97 Flow–through BurstRAM for PowerPC.

32K x 36 3.3 V MCM69F536B 100 (TQ) TQFP 8.5/9/10/12 Now Flow–through BurstRAM, 5 V tolerant I/Os. Not for new designs,

suggest MCM69F536C.

MCM69F536C 100 (TQ) TQFP 8.5/9/10/12 4Q97 5 V tolerant on all pins. Samples 3Q97.

MCM69P536B 100 (TQ) TQFP 4/4.5/5/6/7 Now Pipelined BurstRAM, 5 V tolerant I/Os. Not for new designs,

suggest MCM69P536C.

MCM69P536C 100 (TQ) TQFP 4/4.5/5/6/7 4Q97 5 V tolerant on all pins. Samples 3Q97.

ASYNCHRONOUS

Density Organi–

zation VCC

Motorola

Part Number Pin

Count Packaging

Package width in mils Access TIme

(ns Max) Pro–

duction Comments

4M 512K x 8 5 V MCM6246 36 400 (WJ) SOJ 17/20/25 Now Output enable. Revolutionary pinout.

5 V MCM6246A 36 400 (WJ) SOJ 15 Now For switches and basestations.

3.3 V MCM6946 36 400 (YJ) SOJ 10/12/15 1Q98 For telecom, storage and computing applications.

Samples 4Q97.

256K x 16 3.3 V MCM6343 44

44 400 (YJ) SOJ

TSOP 10/12/15 2Q98 For telecom, modems, cellular, storage and computing

applications. Samples 1Q98.

1M x 4 5 V MCM6249 32 400 (WJ) SOJ 20/25/35 Now Output enable. Revolutionary pinout.

5 V MCM6249A 32 400 (WJ) SOJ 15 Now Replaces MCM6249. For switches, routers and

basestations.

3.3 V MCM6949 32 400 (YJ) SOJ 10/12/15 1Q98 For telecom, storage, and computing applications.

Samples 4Q97.

3M 128K x 24 3.3 V MCM6341 119 (ZP) PBGA 10/12/15 1Q98 DSP applications for base stations, cost, and other

communication applications. Samples late 4Q97.

1M 64K x 18 5 V MCM67A618A 52 (FN) PLCC 10/12/15 Now Not recommended for new designs. Suggest

MCM67A618B.

5 V MCM67A618B 52 (FN) PLCC 10/12/15 Now General asynchronous, latched address and data.

64K x 16 3.3 V MCM6323 44 400 (YJ) SOJ 12/15 Now Not recommended for new designs. Suggest MCM6323A.

3.3 V MCM6323A 44 400 (YJ) SOJ

(TS) TSOP 10/12/15 4Q97 Industrial temperature offered. Revolutionary pinout. DSP

applications. Samples 3Q97.

128K x 8 5 V MCM6226BB 32 300 (EJ), 400 (XJ) SOJ 15/17/20/25 Now Evolutionary pinout.

5 V MCM6726C 32 400 (WJ) SOJ 6/7 Now Revolutionary pinout.

5 V MCM6726D 32 400 (WJ) SOJ 7.5/8/10/12 Now Revolutionary pinout.

3.3 V MCM6326 32 400 (YJ) SOJ 12/15/20 1Q98 Revolutionary pinout. Samples January 98.

3.3 V MCM6926A 32 400 (WJ) SOJ 8/10/12/15 Now Revolutionary pinout.

256K x 4 5 V MCM6229BB 28 300 (EJ), 400 (XJ) SOJ 15/17/20/25 Now Evolutionary pinout.

Motorola Master Selection GuideMemory Products 2.8–4

ASYNCHRONOUS

Density Comments

Pro–

duction

Access TIme

(ns Max)

Packaging

Package width in mils

Count

Motorola

Part Number

VCC

Organi–

zation

5 V MCM6229CA 28 300 (EJ), 400 (XJ) SOJ 15/17/20/25 1Q98 Replaces MCM6226BB. Evolutionary pinout. Samples

4Q97.

5 V MCM6729D 32 400 (WJ) SOJ 7.5/8/10/12 Now Revolutionary pinout.

3.3 V MCM6929A 32 400 (WJ) SOJ 8/10/12/15 Now Revolutionary pinout.

1M x 1 5 V MCM6227B 28 300 (J), 400 (WJ) SOJ 15/17/20/25 Now For telecom, IC tester applications, and storage.

5 V MCM6227BB 28 300 (J), 400 (WJ) SOJ 15/20/25 1Q98 Replaces MCM6227B. For telecom, IC tester

applications, and storage. Samples available 4Q97.

DSPRAM 8K x 24 5 V MCM56824A 52 (FN) PLCC 20/25/35 Now Designed for DSP56001 applications. Replaces 32K x 8s.

256K 32K x 8 5 V MCM6206BA 28 300 (EJ) SOJ 12/15/20/25 Now Not recommended for new designs. Suggest

MCM6206BB.

5 V MCM6206BB 28 300 (EJ) SOJ 12/15/20/25 4Q97 Replaces MCM6206BA.

5 V MCM6706B 28 300 (J) SOJ 8/10 Now Evolutionary pinout. Not recommended for new designs.

Suggest MCM6706D.

5 V MCM6706BR 32 300 (J) SOJ 6/7/8 Now Revolutionary pinout. Not recommended for new designs.

Suggest MCM6706DR.

5 V MCM6706D 28 300 (J) SOJ 8/10 1Q98 Evolutionary pinout. Samples late 4Q97.

5 V MCM6706DR 32 300 (J) SOJ 6/7/8 1Q98 Revolutionary pinout. Samples late 4Q97.

64K x 4 5 V MCM6709B 28 300 (J) SOJ 8/10 Now Evolutionary pinout. Not recommended for new designs.

5 V MCM6709BR 28 300 (J) SOJ 6/7/8 Now Revolutionary pinout. Not recommended for new designs.

FAST STATIC RAM MODULES

(Contact Fast Static RAM Marketing for Custom Fast SRAM Modules)

Desktop Computing Applications

Description Organization and Function Access Time Packaging Production Motorola

Part Number

PowerPC Cache

Mdl

64K x 72 Flow–Through Burst 9 ns 178 Pin Card Edge DIMM (DG) Now MPC2105B

Modules 128K x 72 Flow–Through Burst 9 ns

g()

Now MPC2106B

Coast Modules 64K x 64 Pipelined Burst 8 ns 160 Pin Card Edge DIMM (DG) Now MCM64PE64

Data Communications Applications

Standard BurstRAM

Modules

64K x 72 Flow–Through Burst 9/12 ns 168 Pin DIMM (DG) 3Q97 MCM72F6DG

Modules 128K x 72 Flow–Through Burst 9/12 ns 168 Pin DIMM (DG) 3Q97 MCM72F7DG

256K x 72 Flow–Through Burst 8/12 ns 168 Pin DIMM (DG) 4Q97 MCM72F8DG

512K x 72 Flow–Through Burst 8/12 ns 168 Pin DIMM (DG) 4Q97 MCM72F9DG

Standard BurstRAM

Multichip Packages

256K x 72 Flow–Through Burst 7.5/8 ns Multichip Module on Laminate (ML) 4Q97 MCM72FB8ML

Multichip Packages 256K x 72 Pipelined Burst 3.5/4 ns 4Q97 MCM72PB8ML

512K x 36 Flow–Through Burst 7.5/8 ns 4Q97 MCM36FB9ML

512K x 36 Pipelined Burst 3.5/4 ns 4Q97 MCM36PB9ML

2.8–5

Motorola Master Selection Guide Memory Products

Flash Memory

Flash memory is the most cost–effective non–volatile semiconductor memory. Flash possesses a distinct advantage over traditional non–volatile memories in that it can be

easily programmed while remaining in the system.

Motorola’s low power flash memory products are ideally suited for portable cellular phones, handheld electronic devices, networking equipment and telecom applications.

Please contact your Motorola sales representative for more information.

2.8–6 Motorola Master Selection GuideMemory Products

STANDARD MobileFLASH MEMORY

Motorola

Part Number Density Organization Package Options Boot Block Power Supply Speed Production

M29F800A3UT 8 Mbit 1M x 8 or 512K x 16 48 Pin TSOP Top 3.3 Volt 80, 100, 120 ns NOW

M29F800A3UR 8 Mbit 1M x 8 or 512K x 16 48 Pin Reverse TSOP Top 3.3 Volt 80, 100, 120 ns NOW

M29F800A3BT 8 Mbit 1M x 8 or 512K x 16 48 Pin TSOP Bottom 3.3 Volt 80, 100, 120 ns NOW

M29F800A3BR 8 Mbit 1M x 8 or 512K x 16 48 Pin Reverse TSOP Bottom 3.3 Volt 80, 100, 120 ns NOW

MobileFLASH MEMORY WITH BACKGROUND OPERATION

Motorola

Part Number Density Organization Package Options Boot Block Power Supply Speed Production

M28F800A2UT12 8 Mbit 1M x 8, 512K x 16 48 Pin TSOP Top VCC = 3.3 V, VPP = 5.0 V 120 ns NOW

M28F800A2UR12 8 Mbit 1M x 8, 512K x 16 48 Pin TSOP Bottom VCC = 3.3 V, VPP = 5.0 V 120 ns NOW

M28F800A2UA12 8 Mbit 1M x 8, 512K x 16 .65 pitch µBGA Top VCC = 3.3 V, VPP = 5.0 V 120 ns 2Q98

M28F800A2BA12 8 Mbit 1M x 8, 512K x 16 .65 pitch µBGA Bottom VCC = 3.3 V, VPP = 5.0 V 120 ns 2Q98

2.8–7

Motorola Master Selection Guide Memory Products

Device Status

M = Motorola Qualified Device

S = Custom Product (Copper)

E = Engineering Sample

X = Pre–Qualified Device

Temperature/Burn–In

Blank = Comm. with Burn–In

K = Indust. with Burn–In

F = Extend. with Burn–In

C = Comm. without Burn–In

I = Indust. without Burn–In

E = Extend. without Burn–In

FLASH DINOR I COMPONENT PART NOMENCLATURE

M K B2 8 F

Power Supply

29F = 1 Power Supply

28F = 2 Power Supplies

Density/Configuration

040 = 4M x 8

400 = 4M x 8 / x 16

080 = 8M x 8

800 = 8M x 8 / x 16

016 = 16M x 8

160 = 16M x 8 / x 16

Die Revision

Match Die Rev of Supplier,

If No Supplier then,

O = Original Rev.

A = 1st Gen.

B = 2nd Gen.

C = 3rd Gen.

Voltage

5 = 5.0 V

3 = 3.3 V

2 = 2.7 V

1 = 1.8 V

9 = 0.9 V

Architecture

F = Flashfile

U = Top Boot Block

B = Bottom Boot Block

S = Serial

Package

J = SOJ

T = TSOP

R = Reverse TSOP

A = 0.65 mm CSP

1 2

Speed

12 = 120 ns

10 = 100 ns

80 = 80 ns

Shipping

R = Tape and Reel

Blank = T ray

J = Tube

8 0 0 A 3

111122 3 4 13 14 15 165 6 7 8 9 10

Lead Frame

Blank = MTB (alloy)

Digit