NE680 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
fTGain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz 10 10 10
NF Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 1.6 1.7
f = 2 GHz dB 1.7 2.4 1.8 3 1.9
f = 4 GHz dB 2.6
GNF Associated Gain at VCE = 6 V, IC = 5 mA,
f = 1 GHz dB 14 13.5
f = 2 GHz dB 12.5 10.2 9.6
f = 4 GHz dB 8
MAG Maximum Available Gain at VCE = 6 V, IC = 10 mA
f = 1 GHz dB 18.5 19 18.5
f = 2 GHz dB 16.2 12.7 11.8
f = 4 GHz dB 10.2 8.2 7.3
|S21E|2Insertion Power Gain at VCE = 6 V, IC = 10 mA,
f = 1 GHz dB 17 15.5 15
f = 2 GHz dB 10.5 12.5 7.5 9.8 9.2
f = 4 GHz dB 7.5 4.6 4.4
hFE Forward Current Gain2 at VCE = 6 V, IC = 10 mA 50 100 250 50 100 250
VCE = 3 V, IC = 5 mA 80 160
ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0
IEBO Emitter Cutoff Current at VEB = 1V, IC = 0 mA µA 1.0 1.0 1.0
CRE3Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz pF 0.3 0.7 0.3 0.7
PTTotal Power Dissipation mW 400 150 100
RTH (J-A) Thermal Resistance (Junction to Ambient) °C/W 833 1000
RTH (J- C) Thermal Resistance (Junction to Case) °C/W 120 200 200
PART NUMBER NE68000 NE68018 NE68019
EIAJ1 REGISTERED NUMBER 2SC5013 2SC5008
PACKAGE OUTLINE 00 (CHIP) 18 19
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX
PART NUMBER NE68030 NE68033 NE68035 NE68039/39R
EIAJ1 REGISTERED NUMBER 2SC4228 2SC3585 2SC3587 2SC4095
PACKAGE OUTLINE 30 33 35 39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fTGain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz 10 10 10 10
NF Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 1.5 1.6
f = 2 GHz dB 1.7 1.8 3.0 1.7 2.4 1.7 2.5
f = 4 GHz dB 2.9 2.1 2.6 2.6
GNF Associated Gain at VCE = 6 V, IC = 5 mA,
f = 1 GHz dB 12.5 11.0
f = 2 GHz dB 9.4 9.0 12.5 11
f = 4 GHz dB 5.3 4.2 8 6.5
MAG Maximum Available Gain at VCE = 6 V, IC = 10 mA
f = 1 GHz dB 17 17 18.5 18
f = 2 GHz dB 10.9 10.9 16.2 12.4
f = 4 GHz dB 6.8 6.7 10.2 8.7
|S21E|2Insertion Power Gain at VCE = 6 V, IC = 10 mA,
f = 1 GHz dB 13.5 13 17 14.5
f = 2 GHz dB 8.5 6.7 10.5 12.5 9.6
f = 2 GHz dB 3.6 3.7 7.5 4.9
hFE Forward Current Gain2 at VCE = 6 V, IC = 10 mA 50 100 250 50 100 250 50 100 250
VCE = 3 V, IC = 5 mA 50 100 250
ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 1.0
IEBO Emitter Cutoff Current at VEB = 1V, IC = 0 mA µA 1.0 1.0 1.0 1.0
Cre3Feedback Capacitance at
VCB = 3V, IE = 0 mA, f = 1 MHz pF 0.3 0.7
VCE = 10 V, IE = 0 mA, f = 1 MHz pF 0.3 0.8 0.2 0.7 0.25 0.8
PTTotal Power Dissipation mW 150 200 290 200
RTH (J-A) Thermal Resistance (Junction to Ambient) °C/W 833 620 550 620
RTH (J- C) Thermal Resistance (Junction to Case) °C/W 200 200 200 200
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, PW≤350 µs, duty cycle ≤2%.
3. The emitter terminal should be connected to the ground
terminal of the 3 terminal capacitance bridge.