TIP31A / TIP31C -- NPN Epitaxial Silicon Transistor TIP31A / TIP31C NPN Epitaxial Silicon Transistor Features * Medium Power Linear Switching Applications * Complementary to TIP32 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP31A TIP31A TO-220 3L (Single Gauge) Bulk TIP31C TIP31C TO-220 3L (Single Gauge) Bulk TIP31CTU TIP31C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol Parameter Value TIP31A 60 TIP31C 100 TIP31A 60 TIP31C 100 Unit VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 5 A IB Base Current TJ Junction Temperature TSTG Storage Temperature Range (c) 2000 Semiconductor Components Industries, LLC. November-2017,Rev. 2 V V 1 A 150 C -65 to 150 C Publication Order Number: TIP31C/D Values are at TC = 25C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TA = 25C) 2 Collector Dissipation (TC = 25C) 40 Unit W Electrical Characteristics Values are at TC = 25C unless otherwise noted. Symbol VCEO(sus) Parameter Collector Cut-Off Current ICES Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain(1) VBE(on) fT TIP31A Collector-Emitter Sustaining Voltage(1) ICEO VCE(sat) Conditions Collector-Emitter Saturation Base-Emitter On TIP31C IC = 30 mA, IB = 0 Min. Max. 60 V 100 TIP31A VCE = 30 V, IB = 0 0.3 TIP31C VCE = 60 V, IB = 0 0.3 TIP31A VCE = 60 V, VEB = 0 200 TIP31C VCE = 100 V, VEB = 0 200 VEB = 5 V, IC = 0 Voltage(1) Voltage(1) Current Gain Bandwidth Product 1 VCE = 4 V, IC = 1 A 25 VCE = 4 V, IC = 3 A 10 Unit mA A mA 50 IC = 3 A, IB = 375 mA 1.2 V VCE = 4 V, IC = 3 A 1.8 V VCE = 10 V, IC = 500 mA, f = 1 MHz Note: 1. Pulse test: pw 300 s, duty cycle 2%. www.onsemi.com 2 3.0 MHz TIP31A / TIP31C -- NPN Epitaxial Silicon Transistor Thermal Characteristics hFE, DC CURRENT GAIN VCE = 4V 100 10 1 1 10 100 1000 VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 10000 IC/IB = 10 1000 VBE(sat) 100 VCE(sat) 10 1 10000 10 10000 Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 50 10 IC(MAX) (PULSE) IC(MAX) (DC) s 1m 1 TIP31 VCEO MAX. TIP31A VCEO MAX. TIP31B VCEO MAX. TIP31C VCEO MAX. PC[W], POWER DISSIPATION 45 100s s 5m IC[A], COLLECTOR CURRENT 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain 100 40 35 30 25 20 15 10 5 0 0.1 10 0 100 25 50 75 100 125 150 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area Figure 4. Power Derating www.onsemi.com 3 175 200 TIP31A / TIP31C -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics TIP31A / TIP31C -- NPN Epitaxial Silicon Transistor Physical Dimensions Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB www.onsemi.com 4 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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