SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCP51 ISSUE 3 AUGUST 1995 FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE BCP54 PARTMARKING DETAILS BCP51 BCP51 10 C E C B BCP51 16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -45 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V -1.5 A Peak Pulse Current ICM Continuous Collector Current IC -1 A Power Dissipation at Tamb =25C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -45 V IC=-100 A V(BR)CEO -45 V IC=- 10mA * Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10 A Collector Cut-Off Current ICBO -100 -10 A nA VCB=-30V VCB=-30V, Tamb=150C Emitter Cut-Off Current IEBO -10 A VEB=-5V Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-500mA, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 V IC=-500mA, VCE=-2V* Static Forward Current hFE Transfer Ratio BCP51-10 BCP51-16 Transition Frequency fT 40 25 63 100 250 100 160 125 IC=-150mA, IC=-500mA, IC=-150mA, IC=-150mA, 160 250 MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 13 VCE=-2V* VCE=-2V* VCE=-2V* VCE=-2V* IC=-50mA, VCE=-10V, f=100MHz