BC559 BC560 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 package. QUICK REFERENCE DATA BC559 | BC560 Collector-emitter voltage (+ Vge = 0V) -VcEs max. 30 50 V Collector-emitter voltage (open base) VcEQ max. 30 45 Vv Collector current (peak value) lcm max. 200 200 mA Total power dissipation up to Tamb = 25 C Prot max. 500 500 mW Junction temperature Tj max. 150 150 C D.C. current gain l=2mA;Vce=5V hFe 2 bon bon Transition frequency at f = 100 MHz le@ = 10 mA; --Voe =5V fr > 100 100 MHz Noise figure at Re = 2 kQ I = 200 pA; -VcE=5V = typ. 1,2 1 dB f = 30 Hz to 15 kHz F < 4 3 dB f= 1kHz;B = 200 Hz F < 4 4 dB f = 10 kHz to 50 Hz (equivalent noise voltage) Vn < _ 0,11 pV MECHANICAL DATA Dimensions in mm Fig. 1 TO-92. c _, 4 6.40 Pinning b TI a rnin 1 = emitter vases i 2 = base 3 = collector 5.2 max oT 12.7 min ---__ i a oe max 2:54 y~ TT 1 u a LL. 2.0 max (1) MBCOI4- 1 Note (1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. September 1994 139BC559 BC560 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (+ Vge =0V) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.} Collector current (peak value) Emitter current (peak value) Base current (peak value) Total power dissipation up to Tamb = 25 C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient in free air From junction to case CHARACTERISTICS Tj = 25 9C unless otherwise specified Collector cut-off current ie = 0; -Vcopg = 30 V; Tj = 25 OC Tj = 150 C Base-emitter voltage* Ie = 2mA;-Vcg=5V ~le=10mA;-Vcp =5V Saturation voitages* * I = 10mA; -lp = 0,5 mA -le = 100mA; -lp=5mA * * -VcBo ~VceEs ~VcCEO VEBO l -lcM EM lBm Prot Tstg Tj Rthj-a Rthj-c lcBo IcBo VBE VBE ~VCEsat VBEsat --VCEsat VBEsat Vpe decreases by about 2 mV/K with increasing temperature. * VBE sat decreases by about 1,7 mV/K with increasing temperature. max. max. max. max. max. max. max. max. max. max. typ. typ. typ. typ. 500 65 to + 150 150 250 150 650 600 to 750 820 60 300 750 180 650 930 mw oC oC K/W K/W nA nA uA mV mV mV mv mV mV mV mV 140 September 1994Siticon planer epitaxial transistors BC 559 BC560 Collector capacitance at f = 1 MHz le = 1p=0;-Veg = 10V Ce sityp. 4 pF Transition frequency at f = 100 MHz -I=10mA;-VcEe = 5 V fT typ. 100 MHz Small-signal current gain at f = 1 KHz lc=2mA;Vc_e = 5 V hfe 125 to 800 Noise figure at Rg = 2 k2 ~I = 200 vA; -VcE = 5 V BC559 BC560 = typ. 1,2 1 dB f = 30 Hz to 15 kHz F < 4 3 dB = -B= typ. 1 1 dB f= 1kHz; B = 200 Hz F ec 4 4 dB Equivalent noise voltage at Rg = 2 k22 Ic = 200 uA; -VcE=5V f= 10 Hz to 50 Hz; Tamb = 25 OC Vy < 0,11 uv BC559 | BC559A | BC559B | BC559C BC560 | BCS60A | BC560B | BCS60C D.C. current gain > 125 125 220 420 Ie=2mAiVcE = 8 V NFE << B00 250 475 800 September 1994 144