UNISONIC TECHNOLOGIES CO., LTD HJ44H11 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HJ44H11 is designed for such applications as: series, shunt and switching regulators; output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; low and high frequency inverters/converters; and many others. ORDERING INFORMATION Ordering Number Lead Free Halogen Free HJ44H11L-AA3-R HJ44H11G-AA3-R HJ44H11L-TA3-T HJ44H11G-TA3-T HJ44H11L-TN3-R HJ44H11G-TN3-R HJ44H11L-TN3-T HJ44H11G-TN3-T www.unisonic.com.tw Copyright (c) 2012 Unisonic Technologies Co., Ltd Package SOT-223 TO-220 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E B C E Packing Tape Reel Tube Tape Reel Tube 1 of 3 QW-R209-024.D HJ44H11 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25) PARAMETER Collector- Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current RATINGS UNIT 80 V 80 V 5 V 8 A 5 A SOT-223 5 Power Dissipation (TC=25) TO-220 PD 65 W TO-252 20 Junction Temperature TJ +150 Storage Temperature TSTG -55~+150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCEO VCES VEBO IC IB ELECTRICAL CHARACTERISTICS (TA=25) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-Emitter Breakdown Voltage BVCEO IC=30mA, IB=0 80 Collector-Emitter Breakdown Voltage BVCES IC=1mA, IB=0 80 Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 Collector Cut-Off Current ICES VCB=80V, VEB=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=8A, IB=0.4A Base-Emitter Saturation Voltage(Note) VBE(SAT) IC=8A, IB=0.8A VCE=1V, IC=2A 60 hFE1 DC Current Gain (Note) hFE2 VCE=1V, IC=4A 40 Output Capacitance COB VCB=10V Transition Frequency fT VCE=10V, IC=500mA, f=20MHz Note: Pulse Test: Pulse Width 380us, Duty Cycle2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX 10 50 1 1.5 130 50 UNIT V V V uA uA V V pF MHz 2 of 3 QW-R209-024.D HJ44H11 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS 1000 Current Gain vs. Collector Current 100 Saturation Voltage vs. Collector Current 1000 100 VCE=1V VCE(SAT)@IC=20IB 10 100 10000 1000 Collector Current (mA) 10000 Saturation Voltage vs. Collector Current 1000 10 10 1000 100 1000 Collector Current (mA) Capacitance vs. Reverse-Biased Voltage 100 COB VBE(SAT)@IC=10IB 10 100 10000 10 1000 10000 Collector Current (mA) 1 10 Reverse Biased Voltage (V) 100 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R209-024.D