UNISONIC TECHNOLOGIES CO., LTD
HJ44H11 NPN SILICON TRANSISTOR
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Copyright © 2012 Unisonic Technologies Co., Ltd QW-R209-024.D
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC HJ44H11 is designed for such applications as: series,
shunt and switching regulators; output and driver stages of
amplifiers operating at frequencies from DC to greater than 1MHz;
low and high frequency inverters/converters; and many others.
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
HJ44H11L-AA3-R HJ44H11G-AA3-R SOT-223 B C E Tape Reel
HJ44H11L-TA3-T HJ44H11G-TA3-T TO-220 B C E Tube
HJ44H11L-TN3-R HJ44H11G-TN3-R TO-252 B C E Tape Reel
HJ44H11L-TN3-T HJ44H11G-TN3-T TO-252 B C E Tube
HJ44H11 NPN SILICON TRANSISTOR
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www.unisonic.com.tw QW-R209-024.D
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector- Emitter Voltage VCEO 80 V
Collector-Emitter Voltage VCES 80 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 8 A
Base Current IB 5 A
Power Dissipation (TC=25℃)
SOT-223
PD
5
W TO-220 65
TO-252 20
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55~+150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage BVCEO IC=30mA, IB=0 80 V
Collector-Emitter Breakdown Voltage BVCES I
C=1mA, IB=0 80 V
Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 V
Collector Cut-Off Current ICES V
CB=80V, VEB=0 10 uA
Emitter Cut-off Current IEBO V
EB=5V, IC=0 50 uA
Collector-Emitter Saturation Voltage(Note) VCE
(
SAT
)
I
C=8A, IB=0.4A 1 V
Base-Emitter Saturation Voltage(Note) VBE
(
SAT
)
I
C=8A, IB=0.8A 1.5 V
DC Current Gain (Note) hFE1 V
CE=1V, IC=2A 60
hFE2 V
CE=1V, IC=4A 40
Output Capacitance COB V
CB=10V 130 pF
Transition Frequency fT V
CE=10V, IC=500mA, f=20MHz 50 MHz
Note: Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HJ44H11 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
100 1000 10000
10
100
1000
Current Gain vs. Collector Current
Collector Current (mA)
VCE=1V
10 100 10000
10
100
1000Saturation Voltage vs. Collector Current
Collector Current (mA)
1000
VCE(SAT)@IC=20IB
100 1000 10000
10
1000
10000
Saturation Voltage vs. Collector Current
VBE(SAT)@IC=10IB
Collector Current (mA)
110100
10
100
1000
Capacitance vs. Reverse-Biased Voltage
COB
Reverse Biased Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
