Ordering number : ENN7146 CPH6603 CPH6603 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features * * Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2202 [CPH6603] 0.15 2.9 5 4 0.6 6 0.2 * 0.6 1.6 2.8 0.05 3 0.95 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 0.2 2 0.7 0.9 1 0.4 Specifications SANYO : CPH6 Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS --30 20 V ID --1.5 A Drain Current (Pulse) IDP PW10s, duty cycle1% Allowable Power Dissipation PD Mounted on a ceramic board (900mm20.8mm)1unit V --6.0 A 0.9 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol Conditions V(BR)DSS IDSS ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=16V, VDS=0 --30 VDS=--10V, ID=--1mA --1.2 yfs RDS(on)1 VDS=--10V, ID=--0.8A 1.0 ID=--0.8A, VGS=--10V RDS(on)2 ID=--0.4A, VGS=--4V IGSS VGS(off) Marking : FN (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Ratings min typ Unit max V --1 A 10 A --2.6 V 190 250 m 330 460 m 1.5 S Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: CPH6603/D CPH6603 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time min pF 30 pF VDS=--10V, f=1MHz See specified Test Circuit. 20 pF 7 ns See specified Test Circuit. 4 ns See specified Test Circuit. 22 ns See specified Test Circuit. 8 ns 4.7 nC 0.8 nC Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=--10V, VGS=--10V, ID=--1.5A VDS=--10V, VGS=--10V, ID=--1.5A VDS=--10V, VGS=--10V, ID=--1.5A Diode Forward Voltage VSD IS=--1.5A, VGS=0 Electrical Connection 5 VIN V VDD= --15V 0V --10V ID= --0.8A RL=18.7 VOUT VIN D PW=10s D.C.1% G Top view 3 nC --1.5 Switching Time Test Circuit 4 2 0.7 --0.88 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 Unit max 185 Total Gate Charge 6 typ VDS=--10V, f=1MHz VDS=--10V, f=1MHz td(off) tf Fall Time Ratings Conditions CPH6603 P.G --1.8 --0.8 --0.6 --0.4 --0.4 --0.2 --0.2 0 0 25 C --0.6 --1.0 5C --0.8 --1.2 C V GS= --3V --1.4 --25 Drain Current, ID -- A --1.2 --1.0 VDS= --10V --1.6 V --1.4 --10 Drain Current, ID -- A --1.6 ID -- VGS --2.0 V --4 S Ta= 7 --8 V --1.8 --6 --5 V V ID -- VDS --2.0 50 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 800 --0.5 IT04057 --4.0 IT02666 RDS(on) -- Ta 600 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 700 600 500 ID= --0.4A 400 --0.8A 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 500 V = --4 , VGS 400 A --0.4 I D= 300 V 0.8A, I D= -- 200 --10 V GS= 100 0 --60 --40 IT04058 Rev.0 I Page 2 of 4 I www.onsemi.com --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT04059 CPH6603 7 C 5 5 = Ta --2 C 25 C 75 3 2 3 2 --0.1 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 5 --1.2 --1.4 IT02670 f=1MHz 3 Ciss, Coss, Crss -- pF tf td(on) --1.0 5 td(off) 7 --0.8 7 2 10 --0.6 Ciss, Coss, Crss -- VDS 1000 7 --0.4 Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V 3 --0.2 IT02669 SW Time -- ID 100 Switching Time, SW Time -- ns --1.0 7 5 2 Drain Current, ID -- A 5 tr Ciss 2 100 7 5 3 3 Coss 2 2 Crss 1.0 10 3 5 7 --0.1 2 3 5 7 2 --1.0 Drain Current, ID -- A 3 0 --10 7 5 3 2 Drain Current, ID -- A --8 --4 --2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Total Gate Charge, Qg -- nC 5.0 0.9 ou on ac s DC bo ar --0.01 --0.1 IT04060 90 m2 0. 8m m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 era tio n Ta=25C Single pulse Mounted on a ceramic board(900mm20.8mm)1unit d( 0.2 s op --0.1 7 5 0m 0.4 ms 0m Operation in this area is limited by RDS(on). 3 2 am ic 10 10 er 0.6 <10s ID= --1.5A nt ed --30 IT02671 1m M 0.8 --25 ASO PD -- Ta 1.0 --20 IDP= --6A --1.0 7 5 3 2 0 --15 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --1.5A --6 --10 --5 IT02672 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 3 2 3 0.1 --0.01 Allowable Power Dissipation, PD -- W VGS=0 Ta=75 C Forward Current, IF -- A Forward Transfer Admittance, yfs -- S VDS= --10V 2 1.0 IF -- VSD --10 7 5 25C --25C yfs -- ID 3 160 IT04062 Rev.0 I Page 3 of 4 I www.onsemi.com 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT04061 CPH6603 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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