TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS Designed for Complementary Use with TIP145, TIP146 and TIP147 125 W at 25C Case Temperature 10 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL TIP140 Collector-base voltage (IE = 0) TIP141 V CBO E T E L O S B O TIP140 TIP141 UNIT 60 TIP142 Collector-emitter voltage (IB = 0) VALUE VCEO TIP142 80 V 100 60 80 V 100 VEBO 5 V IC 10 A ICM 15 A IB 0.5 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 3.5 W 1/2LIC2 100 mJ Tj -65 to +150 C Tstg -65 to +150 C TL 260 C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 1 W/C. Derate linearly to 150C free air temperature at the rate of 28 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE VEC Collector-emitter breakdown voltage TEST CONDITIONS MIN TIP140 IC = 30 mA IB = 0 (see Note 5) TYP MAX TIP141 80 TIP142 100 V VCE = 30 V IB = 0 TIP140 2 VCE = 40 V IB = 0 TIP141 2 VCE = 50 V IB = 0 TIP142 2 VCB = 60 V IE = 0 TIP140 1 VCB = 80 V IE = 0 TIP141 1 VCB = 100 V IE = 0 TIP142 1 VEB = 5V IC = 0 Forward current VCE = 4V IC = transfer ratio VCE = 4V IC = 10 A Collector-emitter IB = 10 mA IC = 5 A saturation voltage IB = 40 mA IC = 10 A Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Base-emitter voltage Parallel diode forward voltage IE = 4V 10 A mA mA 1000 (see Notes 5 and 6) 500 2 (see Notes 5 and 6) V 3 E T E L O S B O VCE = mA 2 5A UNIT 60 IC = 10 A (see Notes 5 and 6) 3 V IB = 0 (see Notes 5 and 6) 3.5 V MAX UNIT NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25C case temperature PARAMETER ton Turn-on time toff Turn-off time TEST CONDITIONS MIN IB(on) = 40 mA IB(off) = -40 mA 0.9 s VBE(off) = -4.2 V RL = 3 tp = 20 s, dc 2% 11 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP IC = 10 A DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS140AA 70000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 10000 1000 tp = 300 s, duty cycle < 2% IB = I C / 100 1*5 1*0 0*5 E T E L O S B O VCE = 4 V tp = 300 s, duty cycle < 2% 100 0*5 TCS140AB 2*0 1*0 10 20 0 0*5 1*0 IC - Collector Current - A TC = -40C TC = 25C TC = 100C 10 20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS140AC VBE(sat) - Base-Emitter Saturation Voltage - V 3*0 TC = -40C TC = 25C 2*5 TC = 100C 2*0 1*5 1*0 0*5 IB = IC / 100 tp = 300 s, duty cycle < 2% 0 0*5 1*0 10 20 IC - Collector Current - A Figure 3. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS140AA 10 1*0 E T E L O S B O TIP140 TIP141 TIP142 0*1 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS140AA Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.