SD603C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 600 A FEATURES * High power FAST recovery diode series * 1.0 to 2.0 s recovery time RoHS COMPLIANT * High voltage ratings up to 2200 V * High current capability * Optimized turn-on and turn-off characteristics B-43 * Low forward recovery * Fast and soft reverse recovery * Press PUK encapsulation * Case style conform to JEDEC B-43 * Maximum junction temperature 125 C * Lead (Pb)-free PRODUCT SUMMARY IF(AV) 600 A * Designed and qualified for industrial level TYPICAL APPLICATIONS * Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) IFSM I2 t VRRM trr TJ Document Number: 93178 Revision: 04-Aug-08 TEST CONDITIONS Ths Ths VALUES UNITS 600 A 55 C 942 A 25 C 50 Hz 8320 60 Hz 8715 A 50 Hz 346 60 Hz 316 Range 400 to 2200 V 1.0 to 2.0 s TJ 25 - 40 to 125 For technical questions, contact: ind-modules@vishay.com kA2s C www.vishay.com 1 SD603C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 600 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 20 2000 2100 22 2200 2300 SD603C..S10C SD603C..S15C SD603C..S20C IRRM MAXIMUM AT TJ = 125 C mA 45 FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled IF(AV) Maximum RMS current IF(RMS) Maximum peak, one-cycle non-repetitive forward current 942 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing 7000 100 % VRRM reapplied 7330 Sinusoidal half wave, initial TJ = TJ maximum No voltage reapplied 346 316 224 t = 0.1 to 10 ms, no voltage reapplied 3460 VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 1.36 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.81 Low level of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.87 High level of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.67 Ipk = 1885 A, TJ = 25 C; tp = 10 ms sinusoidal wave 2.97 VFM kA2s 245 Low level value of threshold voltage Maximum forward voltage drop A 8715 100 % VRRM reapplied t = 8.3 ms I2t C 8320 t = 10 ms I2t A 55 (75) t = 10 ms No voltage reapplied UNITS 600 (300) 25 C heatsink temperature double side cooled t = 8.3 ms IFSM Maximum I2t for fusing VALUES kA2s V m V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 C CODE trr AT 25 % IRRM (s) S10 1.0 S15 1.5 S20 2.0 www.vishay.com 2 TYPICAL VALUES AT TJ = 125 C TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 dI/dt (A/s) 25 Vr (V) - 30 trr AT 25 % IRRM (s) Qrr (C) Irr (A) 2.0 45 34 3.2 87 51 3.5 97 55 For technical questions, contact: ind-modules@vishay.com IFM dir dt trr t Qrr IRM(REC) Document Number: 93178 Revision: 04-Aug-08 SD603C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 600 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS VALUES TJ - 40 to 125 TStg - 40 to 150 UNITS C RthJ-hs DC operation single side cooled 0.076 DC operation double side cooled 0.038 K/W Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet 9800 (1000) N (kg) 83 g B-43 RthJ-hs CONDUCTION SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.006 0.007 0.005 0.005 120 0.008 0.008 0.008 0.008 90 0.010 0.010 0.011 0.011 60 0.015 0.015 0.016 0.015 30 0.026 0.025 0.026 0.025 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 93178 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD603C..C Series SD603C..C Series (Single Side Cooled) RthJ-hs (DC) = 0.076 K/ W 120 110 Conduction Angle 100 90 80 60 30 180 90 120 70 0 50 100 150 200 250 300 350 130 SD603C..C Series (Double Side Cooled) RthJ-hs (DC) = 0.038 K/ W 120 110 100 Conduction Period 90 80 30 70 60 90 120 60 180 50 DC 40 0 200 400 600 800 1000 Average Forward Current (A) Fig. 4 - Current Ratings Characteristics SD603C..C Series (Single Side Cooled) RthJ-hs (DC) = 0.076 K/ W 120 110 100 Conduction Period 90 30 80 60 90 120 70 180 DC 60 0 100 200 300 400 Maximum Average Forward Power Loss (W) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 130 1800 180 120 90 60 30 1600 1400 1200 RMS Limit 1000 800 600 Conduction Angle 400 SD603C..C Series TJ = 125C 200 0 0 500 100 200 300 400 500 600 Average Forward Current (A) Average Forward Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics 130 SD603C..C Series (Double Side Cooled) R thJ-hs(DC) = 0.038 K/ W 120 110 100 Conduction Angle 90 80 70 30 60 90 60 120 180 50 www.vishay.com 4 Maximum Allowable Heatsink Temperature (C) 130 Fast Recovery Diodes (Hockey PUK Version), 600 A 0 100 200 300 400 500 600 700 Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperat ure (C) Vishay High Power Products 2500 DC 180 120 90 60 30 2000 1500 1000 RMS Limit Conduc tion Period SD603C..C Series TJ = 125C 500 0 0 200 400 600 800 1000 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - Forward Power Loss Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 93178 Revision: 04-Aug-08 SD603C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 600 A Peak Half Sine Wave Forward Current (A) 8000 10000 At Any Rated Load Condition and With Rated VRRM Applied Following Surge. Initial TJ = 125C 7000 @60 Hz 0.0083 s 6500 @50 Hz 0.0100 s 6000 Instantaneous Forward Current (A) 7500 5500 5000 4500 4000 3500 SD603C..C Series 3000 1000 TJ = 25 C TJ = 125 C 100 SD603C..C Series 2500 10 1 10 .5 100 1.5 Number of Equa l Amplitude Ha lf Cyc le Current Pulses (N) 8000 7000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125 C No Voltage Reapplied Rated VRRMReapplied 6000 5000 4000 3000 SD603C..C Series 2000 0.01 0.1 3.5 4.5 5.5 6.5 7.5 8.5 Fig. 9 - Forward Voltage Drop Characteristics Transient Thermal Impedance Z thJ-hs (K/ W) Peak Half Sine Wave Forward Current (A) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 9000 2.5 Instantaneous Forward Voltage (V) 1 0.1 SD603C..C Series 0.01 Stead y State Va lue : RthJ-hs= 0.076 K/ W (Single Side Cooled) RthJ-hs= 0.038 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 Pulse Train Duration (s) 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 100 V FP Forward Rec overy (V) 80 I TJ = 125C 60 TJ = 25C 40 20 SD603C..S20C Series 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 Rate Off Rise Of Forward Current di/ d t (A/ usec) Fig. 11 - Typical Forward Recovery Characteristics Document Number: 93178 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD603C..C Series 2.1 Maximum Reverse Recovery Time - Trr (s) 2.2 Fast Recovery Diodes (Hockey PUK Version), 600 A SD603C..S10C Series TJ = 125 C; V r = 30V I FM = 1000 A Square Pulse 2 1.9 500 A 1.8 250 A 1.7 1.6 10 SD603C..S15C Series TJ= 125 C; V r = 30V 3.5 I FM = 1000 A Square Pulse 3 500 A 2.5 250 A 2 10 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Rate Of Fall Of Forward Current - di/d t (A/ s) Fig. 12 - Recovery Time Characteristics Fig. 15 - Recovery Time Characteristics Maximum Reverse Recovery Charge - Qrr (C) 100 4 Maximum Reverse Rec overy Charge - Qrr (C) Maximum Reverse Recovery Time - Trr (s) Vishay High Power Products I FM = 1000 A 120 Square Pulse 110 100 500 A 90 80 250 A 70 60 50 40 30 SD603C..S10C Series TJ = 125 C; V r = 30V 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Maximum Reverse Rec overy Current - Irr (A) Fig. 13 - Recovery Charge Characteristics 120 110 100 90 80 I FM = 1000 A Square Pulse 500 A 250 A 70 60 50 40 30 20 SD603C..S10C Series TJ = 125 C; V r = 30V 10 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 14 - Recovery Current Characteristics www.vishay.com 6 200 180 I FM = 1000 A Square Pulse 160 140 500 A 120 100 250 A 80 60 SD603C..S15C Series TJ= 125 C; V r = 30V 40 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 16 - Recovery Charge Characteristics Maximum Reverse Recovery Current - Irr (A) 130 140 130 120 I FM = 1000 A Square Pulse 110 100 500 A 90 80 250 A 70 60 50 40 30 SD603C..S15C Series TJ= 125 C; V r = 30V 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/s) Fig. 17 - Recovery Current Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 93178 Revision: 04-Aug-08 SD603C..C Series Maximum Reverse Recovery Charge - Qrr (C) Maximum Reverse Rec overy Time - Trr (s) Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 600 A 4.5 SD603C..S20C Series TJ= 125 C; V r = 30V 4 I FM = 1000 A 3.5 Sq uare Pulse 3 500 A 2.5 250 A 2 10 100 200 I FM = 1000 A 180 Sq uare Pulse 160 140 500 A 120 100 250 A 80 SD603C..S20C Series TJ = 125 C; V r = 30V 60 40 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/dt (A/ s) Rate Of Fa ll Of Forward Current - di/ dt (A/ s) Maximum Reverse Recovery Current - Irr (A) Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics 150 140 IFM = 1000 A 130 Square Pulse 120 110 100 500 A 90 80 250 A 70 60 50 SD603C..S20C Series TJ= 125 C; V r = 30V 40 30 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 20 - Recovery Current Characteristics 1E4 10 20 joules per pulse 20 joules per pulse 10 Peak Forward Current (A) 4 1 4 2 2 1 0.4 1E3 0.4 0.2 0.1 0.2 0.04 0.1 0.02 1E2 0.01 tp 1E1 1E1 SD603C..S10C Series Sinusoidal Pulse TJ = 125C, VRRM = 1120V dv/ dt = 1000V/ s 1E2 tp 1E3 Pulse Basewidth (s) 1E4 1E1 SD603C..S10C Series Trapezoidal Pulse TJ = 125C, VRRM = 1120V d v/ dt = 1000V/ s; di/ dt=50A/ s 1E2 1E3 1E4 Pulse Basewidth (s) Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics Document Number: 93178 Revision: 04-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 SD603C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 600 A 1E4 20 joules per pulse 20 joules p er p ulse Peak Forward Current (A) 10 10 4 2 4 1 1E3 2 0.4 1 0.2 0.4 0.1 0.04 0.2 0.02 1E2 tp 1E1 1E1 SD603C..S15C Series Sinusoid al Pulse TJ= 125C, VRRM = 1760V d v/ dt = 1000V/ s 1E2 tp 1E3 1E4 SD603C..S15C Series Trapezoidal Pulse TJ = 125C, VRRM = 1760V d v/ dt = 1000V/ s; di/ dt=50A/ s 1E1 1E2 1E3 1E4 Pulse Basewid th (s) Pulse Basewidth (s) Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 20 joules per pulse 20 joules per pulse Peak Forward Current (A) 10 10 4 4 2 2 1E3 1 1 0.4 0.4 0.2 0.1 1E2 0.04 tp 1E1 1E1 SD603C..S20C Series Sinusoidal Pulse TJ = 125C, VRRM = 1760V dv/ dt = 1000V/ s 1E2 1E3 tp 1E4 SD603C..S20C Series Trapezoidal Pulse TJ = 125C, VRRM = 1760V dv/ dt = 1000V/ s; di/ d t=50A/ s 1E1 Pulse Basewidth (s) 1E2 1E3 1E4 Pulse Basewidth (s) Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 93178 Revision: 04-Aug-08 SD603C..C Series Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 600 A ORDERING INFORMATION TABLE Device code SD 60 3 C 22 S20 C 1 2 3 4 5 6 7 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - trr code (see Recovery Characteristics table) 7 - C = PUK case B-43 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93178 Revision: 04-Aug-08 http://www.vishay.com/doc?95249 For technical questions, contact: ind-modules@vishay.com www.vishay.com 9 Outline Dimensions Vishay Semiconductors B-43 DIMENSIONS in millimeters (inches) 42 (1.65) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 25.3 (1) DIA. MAX. 2 places 15.4 (0.61) 14.4 (0.57) 0.8 (0.03) MIN. both ends 40.5 (1.59) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Document Number: 95249 Revision: 26-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000