naan pee ee FAIRCHILD repre reread SEMICONDUCTOR NDP4060 / NDB4060 July 1996 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features B15A, 60V. Rygiow = 0.102 @ Vac=t0V. = Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. = 175C maximum junction temperature rating. High density cell design for extremely low Rogox)- = TO-220 and TO-263 (DPAK) package for both through hole and surface mount applications. G5 TO-220 . S TO-263AB Ss NDP Series NOB Series s Absolute Maximum Ratings _T,, = 25C unles otherwise noted Symbol | Parameter NDP4060 | NDB4060 Units Voss Drain-Source Voltage 60 Ver Drain-Gate Voltage (Ry, < 1 MQ) 60 v Voss Gate-Source Voltage - Continuous +20 v - Nonrepetitive (t,< 50 4s) +40 lb Drain Current - Continuous +15 A - Pulsed +45 P, Total Power Dissipation 50 Ww Derate above 25C 0.33 wre T,,Tsrq | Operating and Storage Temperature Range 65 to 175 C L Maximum lead temperature for soldering purposes, 275 C 1/8" from case for 5 seconds NOP4060 Rev. C 4-155 0907E0N/090?7dONNDP4060/NDB4060 Electrical Characteristics (1, = 25C unless otherwise noted) Symbol | Parameter Conditions | min | Typ | Max | Units DRAIN-SOURCE AVALANCHE RATINGS (note 1) Woes Single Pulse Drain-Source Avalanche Vop = 25 V,1,=15A 40 mJ Energy lang Maximum Drain-Source Avalanche Current 15 A OFF CHARACTERISTICS BV ogg Drain-Source Breakdown Voltage Vg = 0 V, [= 250 pA 60 V loss Zero Gate Voltage Drain Current Vog = 60 V, Vag= OV 250 pA T,= 125C 1 mA lesser Gate - Body Leakage, Forward Vas = 20 V, Vag = 0 V 100 nA lesen Gate - Body Leakage, Reverse Vag = 720 V, Vig= 0 V -100 nA ON CHARACTERISTICS (note 1) Vasa) Gate Threshold Voltage Vog = Veg: Ip = 250 pA 2 3 4 V [T,=125C | 14 | 24 | 36 Pogiony Static Drain-Source On-Resistance Veg = 10V, 5 =7.5A 0.078 | 0.1 Q [T,= 125C 0.12 | 0.165 leven On-State Drain Current Vgg = 10 V, Vag = 10 V 15 A Ges Forward Transconductance Vog = 10V,1=7.5A 3 5.7. s DYNAMIC CHARACTERISTICS C., Input Capacitance Vog = 25, Ves =0V, 370 | 450 | pF Cy. Output Capacitance f= 1.0MHz 165 | 200 | pF C... Reverse Transfer Capacitance 50 100 | pF SWITCHING CHARACTERISTICS inote 1) en Tum - On Delay Time Vp =30V, |, =15A 8 20 ns t, Tum - On Rise Time Vos = 10 V, Roey = 25 22 70 100 ns bom Tum - Off Delay Time 18 30 ns t Tum - Off Fall Time 37 50 ns Q, Total Gate Charge Vos = 48 V 12.7 17 nc Q. Gate-Source Charge b= 15A, Vos = 10V 3.2 nc Qu Gate-Drain Charge 7 nc 4-156 NDP4060 Rev. CElectrical Characteristics (T, = 25C unless otherwise noted) = 7 _|O Symbol | Parameter Conditions | Min | Typ Max | Units | "9 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 3s Ig Maximum Continues Drain-Source Diode Forward Current 15 A 2 been Maximum Pulsed Drain-Source Diode Forward Current 45 A > Ven Source-Drain Diode Forward Voltage Veg = OV, 1,= 7.5 A Wore 1) 0.95 13 Vv Oo T,= 125C 088 | 12 2 t Reverse Recovery Time Vog = OV, 1, = 15A, 25 46 100 ns oO = dl./dt = 100 A/us o> | Reverse Recovery Current 1.5 3.4 7 A So T THERMAL CHARACTERISTICS Bosc Thermal Resistance, Junction-to-Case 3 C Rosa Thermal Resistance, Junction-to-Ambient 62.5 | CW Note: 1. Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0%. NDP4060 Rev. C 4-157NDP4060/NDB4060 Typical Electrical Characteristics Ig , DRAIN-SSOURCE CURRENT (A) 0 t 2 3 4 5 Vog . DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 2.2 Rpgony NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50 -25~COsHKiCS 100 T y JUNCTION TEMPERATURE (C) 125 150 175 Figure 3. On-Resistance Variation with Temperature. Lac Ip, DRAIN CURRENT (A) 3S Fen 4 _ 6 8 10 Vag. GATE TO SOURCE VOLTAGE (V} Figure 5. Transfer Characteristics. Rpsiony: NORMALIZED Fipgon): NORMALIZED DRAIN-SOURCE ON-RESISTANCE Vth NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE DRAIN-SOQURCE ON-RESISTANCE 50-25 0 25 50 75 Ty, JUNCTION TEMPERATURE (C} o 5 10 15 20 25 30 ts , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. Ty = 125C 0 5 10 15 20 25 30 Uy. ORAIN CURRENT (A) Figure 4. On-Resistance Variation with Drain Current and Temperature. Vos = Ves Ip = 250nA 100 125 150 175 Figure 6. Gate Threshold Variation with Temperature. 4-158 NDP4060 Rev. CTypical Electrical Characteristics (continued) wo I I Ip = 250pA 2 a BV pss NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE e a 25 Qo 25 50 75 100 125 T JUNCTION TEMPERATURE (C) 2 a 150 175 yo Figure 7. Breakdown Voltage Variation with Temperature. CAPACITANCE (pF) 1 2 3 5 10 20 30 60 v DRAIN TO SOURCE VOLTAGE () DS Figure 9. Capacitance Characteristics. a Roen Or lh DUT Figure 11. Switching Test Circuit. nD 3 Vgg = OV Zz 10 B w 5 z g Je 125C 3 2 2 a c ai Ww wn f 0.5 > Ww c G02 O41 0.4 0.6 0.8 1.2 14 Vgp , BODY DIODE cORWAAD VOLTAGE (Vv) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Ip = 158 ge 0 5 10 15 20 Qq . GATE CHARGE (nC) v Gs' GATE-SOURCE VOLTAGE {V) Figure 10. Gate Charge Characteristics. INVERTED K90% 50% 50% 10% F [~t- PULSE WIDTH Figure 12. Switching Waveforms. NDP4060 Rev. C 4-159 0907EGQN/0907dGNNDP4060/NDB4060 Typical Electrical Characteristics (continued) Veg = 20V SINGLE PULSE Acs 3C/W Te = 25C 9 pg TRANSCONDUCTANCE (SIEMENS) Ip. ORAIN CURRENT (A) 0 2 4 8 10 a 1g, DRAIN CURRENT (A) 2 5 10 30 50 70 Vpg DRAIN-SOURCE VOLTAGE (V) Figure 13. Transconductance Variation with Figure 14. Maximum Safe Operating Area. Drain Current and Temperature. Ww 8 0.5 wig > 0.3 + E & Rec =n) * Puc Gg 02 Raye = 3.0 C/W ES | a x a 0.1 i we Pipk) : zt = F 0.05 bat ty : & 5 tt; Ww Z = 0.03 2 oo Ty-Tg =P * Raye tt) e : Duty Cycle, D=t, /% 0.01 -~- 0.01 0.05 O41 0.5 1 5 10 50 100 500 1000 t, . TIME (ms) Figure 15. Transient Thermal Response Curve. NDP4060 Rev. C 4-160