VISHAY
4N32/ 4N33
Document Number 83736
Rev. 1.2, 04-Dec-03
Vishay Semiconductors
www.vishay.com
1
i179005
1
2
3
6
5
4
B
C
E
A
C
NC
Optocoupler, Photodarlington Output, High Gain, With Base
Connection
Features
• Very high current transfer ratio, 500 % Min.
• High isolation resistance, 1011 Ω Typical
• Standard plastic DIP package
Agency Approvals
• UL File #E52744 System Code H or J
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• BSI IEC60950 IEC60965
Description
The 4N32 and 4N33 are optically coupled isolators
with a gallium arsenide infrared LED and a solicon
photodar l ing ton se ns or.
Switching can be achieved while maintaining a high
degree of isolation between driving and load circuits.
These optocouplers can be used to replace reed and
mercury relays with advantages of long life, high
speed switching and elimination of magnetic fields.
Order Information
For additional option information and package dimensions see
Option Section.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess o f the absolute Maximu m Ratings c an cau se permanent dama ge to the device. Funct ional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Part Remarks
4N32 CTR > 500 %, DIP-6
4N33 CTR > 500 %, DIP-6
4N32-Xxx7 CTR > 500 %, SMD-6 (option 7)
4N32-Xxx9 CTR > 500 %, SMD-6 (option 9)
4N33-Xxx7 CTR > 500 %, SMD-6 (option 7)
4N33-Xxx9 CTR > 500 %, SMD-6 (option 9)
Parameter Test condition Symbol Value Unit
Peak reverse voltage VR3.0 V
Forw ard contin uous current IF60 mA
Power dissipation Pdiss 100 mW
Derate linearly from 55 °C 1.33 mW/°C
Parameter Test condition Symbol Value Unit
Collector-emitter breakdown voltage BVCEO 30 V
Emitter-base breakdown voltage BVEBO 8.0 V
Collector-base breakdown voltage BVCBO 50 V
Emitter-collector breakdown voltage BVECO 5.0 V
www.vishay.com
2Document Number 83736
Rev. 1.2, 04-Dec-03
VISHAY
4N32/ 4N33
Vishay Semiconductors
Coupler
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
1) Indicates JEDEC registered values
Collector (load) current IC125 mA
Power dissipation Pdiss 150 mW
Derate linearly 2.0 mW/°C
Parameter Test condition Symbol Value Unit
Total dissipation Ptot 250 mW
Derate linearly 3.3 mW/°
Isolation test voltage (between
emitter and detector, Standard
Climate: 23 °C/ 50 %RH, \\nDIN
500 14)
VISO 5300 VRMS
Leakage Path 7.0 mm min .
Air Path 7.0 mm min .
Isolation Resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω
Storange temperature Tamb - 55 to + 150 °C
Operating temperature Tstg - 55 to + 100 °C
Lead soldering time at 260 °C 10 s
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 50 mA VF1.25 1.5 V
Reverse current VR = 3.0 V IR0.1 100 µ
Capacitance VR = 0 V CO25 pF
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter breakdown
voltage1) IC = 100 µA, IF = 0 BVCEO 30 V
Collector-base breakdown
voltage1) IC = 100 µA, IF = 0 BVCBO 50 V
Emitter-base breakdown
voltage1) IC = 100 µA, IF = 0 BVEBO 8.0 V
Emitter-collector breakdown
voltage1) IC = 100 µA, IF = 0 BVECO 5.0 10 V
Collector-emitter leakage
current VCE = 10 V, IF = 0 ICEO 1.0 100 nA
IC = 0.5 mA, VCE = 5.0 V hFE 13
Parameter Test condition Symbol Value Unit
VISHAY
4N32/ 4N33
Document Number 83736
Rev. 1.2, 04-Dec-03
Vishay Semiconductors
www.vishay.com
3
Coupler
Current Transfer Ratio
Switching Characteristics
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Typ. Max Unit
Colector emitter saturation
voltage VCEsat 1.0 V
Coupling capacitance 1.5 pF
Parameter Test condition Symbol Min Typ. Max Unit
Current Transfer Ratio VCE = 10 V, IF = 10 mA, CTR 500 %
Parameter Test condition Symbol Min Typ. Max Unit
Turn on time VCC = 10 V, IC = 50 mA ton 5.0 µs
Turn off time IF = 200 mA, RL = 180 Ωtoff 100 µs
Figure 1. Normalized Non-saturated and Saturated CTRCE vs.
LED Current
Figure 2. Normalized Non-saturated and Saturated Collector-
emitter Current vs. LED Current
i4n32-33_02
.1 1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Vce =1V
Vce=5V
IF - LED Current - mA
NCTRce - Normalized CTRce
Vce=5V
IF=10mA
Ta = 25°C
Normalized to:
i4n32-33_03
100
1.1
.001
.01
.1
1
10
Vce=1V
Vce=5V
IF - LED Current - mA
NIce - Normalized Ice
Ta = 25°C
IF = 10 mA
Vce=5V
Normalized to:
10
Figure 3. Normalized Collector-Base Photocurrent vs. LED
Current
Figure 4. Non-saturated and Saturated HFE vs. Base Current
i4n32-33_04
.1 1 1 0 100
.001
.01
.1
1
10
IF - LED Current - mA
NIcb - Normalized Icb
Ta = 25°C
Vcb = 3.5 V
IF = 10 mA
Normalized to:
i4n32-33_05
.01 .1 1 10 100
0
2000
4000
6000
8000
10000
Vce = 5 V
Vce = 1 V
Ib - Base Current - µA
HFE - Forward Transfer Gain
Ta=25°C
www.vishay.com
4Document Number 83736
Rev. 1.2, 04-Dec-03
VISHAY
4N32/ 4N33
Vishay Semiconductors
Figure 5. Low to High Propagation Delay vs. Collector Load
Resistance and LED Current
Figure 6. High to low Propagation Delay vs. Collector Load
Resistance and LED Current
Figure 7. Switching Waveform and Switching Schematic
i4n32-33_06
0 5 10 15 20
0
20
40
60
80 Ta = 25°C, Vcc = 5V
Vth = 1.5 V
220 Ωıˇ
470 Ω
IF - LED Current - mA
tpLH - Low/High Propagation
Delay - µS
100 Ω
1.0 kΩ
i4n32-33_07
0 5 10 15 20
0
5
10
15
20
100Ω
1kΩ
IF - LED Current - mA
tpHL - High/Low Propagation
delay - µs
Ta=25°C
Vcc = 5 V
Vth = 1.5 V
i4n32-33_08
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH=1.5 V
V
O
RL
V
CC
IF
VISHAY
4N32/ 4N33
Document Number 83736
Rev. 1.2, 04-Dec-03
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in Inches (mm)
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (1.22)
.052 (1.32)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
ISO Method A
.315 (8.0)
MIN.
.300 (7.62)
TYP.
.180 (4.6)
.160 (4.1)
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.028 (0.7)
MIN.
Option 7
18494
min.
.315 (8.00)
.020 (.51)
.040 (1.02)
.300 (7.62)
ref.
.375 (9.53)
.395 (10.03)
.012 (.30) typ.
.0040 (.102)
.0098 (.249)
15° max.
Option 9
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6Document Number 83736
Rev. 1.2, 04-Dec-03
VISHAY
4N32/ 4N33
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
