N-Channel Enhancement Mode Field Effect Transistor IRF830 HFP830 TO-220 Ta=25 Tstg----....................................... -55~150 Tj----................................................ -55~150 1 G VDSS------.......................................500V 2 D VDGR ---- --(RGS=1M) ................................. 500V 3 S VGS------....................................... 20V ID----Tc=25.......................................4.5A PD----Tc=25....................................75W Ta=25 BVDSS IDSS IGSS VGS th IDon RDSon gfs Ciss Coss Crss Tdon Tr Tdoff Tf Qg Qgs Qgd IS VSD -- -- -- -- -- -- -- 500 25 100 4.0 2.0 4.5 1.5 2.5 22 12 10 800 200 60 30 30 55 30 30 4.5 1.6 V A nA V A S pF pF pF ns ns ns ns nC nC nC A V ID=250AVGS=0 VDS=500VVGS=0 VGS=20VVDS=0 VDS=VGSID=250A VDS6.75VVGS=10V VGS=10VID=2.5A VDS=10VID=2.5A VDS=25VVGS=0f=1MHz VDD=200VID=2.5A RG=15 VDS=0.8VDSS, VGS=10V ID=4.5A IS=4.5AVGS=0