Pb Free Plating Product ISSUED DATE :2006/10/27 REVISED DATE : GSC4404 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 24m 8.5A Description The GSC4404 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltage as low as 2.5V. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 V Continuous Drain Current, VGS@10V ID @TA=25 8.5 A Continuous Drain Current, VGS@10V ID @TA=70 7.1 A 60 A 2.5 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 0.02 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-amb 50 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSC4404 Max. Unit /W Page: 1/4 ISSUED DATE :2006/10/27 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.7 - 1.4 V VDS=VGS, ID=250uA gfs - 16 - S VDS=5V, ID=5A IGSS - - 100 nA VGS= 12V - - 1 uA VDS=30V, VGS=0 - - 5 uA VDS=24V, VGS=0 - - 24 - - 30 - - 48 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance 2 IDSS RDS(ON) Test Conditions VGS=10V, ID=8.5A m VGS=4.5V, ID=8.5A VGS=2.5V, ID=5.0A Total Gate Charge Qg - 9.7 12 Gate-Source Charge Qgs - 1.63 - Gate-Drain ("Miller") Change Qgd - 3.1 - Td(on) - 3.3 - Tr - 4.7 - Td(off) - 26 - Tf - 4.1 - Input Capacitance Ciss - 857 1050 Output Capacitance Coss - 97 - Reverse Transfer Capacitance Crss - 71 - Symbol Min. Typ. Max. Unit VSD - - 1.0 V IS=1.0A, VGS=0V Continuous Source Current (Body Diode) IS - - 4.3 A VD= VG=0V, VS=1.0V Reverse Recovery Time2 Trr - 15 - ns Reverse Recovery Charge Qrr - 8.6 - nC IS=5.0A, VGS=0V dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=8.5A VDS=15V VGS=4.5V ns VDS=15V VGS=10V RG=6 RL=1.8 pF VGS=0V VDS=15V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad. GSC4404 Page: 2/4 ISSUED DATE :2006/10/27 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 4. On-Resistance v.s. Junction Temperature 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 Fig 5. On-Resistance v.s. Gate-Source Voltage GSC4404 Fig 6. Body Diode Characteristics Page: 3/4 ISSUED DATE :2006/10/27 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Maximum Power Dissipation v.s. Junction Temperature Fig 9. Gate Charge Characteristics 0.00001 0.0001 0.001 0.01 Fig 10. Typical Capacitance Characteristics 0.1 1 10 100 1000 Fig 11. Normalized Maximum Transient Thermal Impedance Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC4404 Page: 4/4