2N5564-2N5566 Dual N-Channel JFET (INTERSIL FEATURES PIN CHIP Specified Matching Characteristics CONFIGURATION TOPOGRAPHY High Gain 7500ymho Minimum 10.71 6033 Low ON Resistance 1002 Maximum on 8 ee y 35 | | 34) 35 ABSOLUTE MAXIMUM RATINGS | Tn (25C unless otherwise noted) some [4 ne a Gate-Gate Voltage........ 0... cece cece cece eee + 80V " me Gate-Drain or Gate-Source Voltage .............55. -40V as | | | | | :: 5 Gate Current... 0.00.0... ceca eee eee teen e eee 50mA ask aa Device Dissipation (Each Side), Ta = 25C s, 2V Ge 5; U Smt on (Derate 2:2 MW/C)...... 0.20 .e cee ee eee es 325mw om Total Device Dissipation, Ta = 25C ORDERING INFORMATION (Derate 3.3 MWIC). 0... cece eee cee eee ene 650mW Storage Temperature Range.......... -65C to + 200C TO-71 WAFER DICE Lead Temperature 2N5564 | 2N5564/W | 2N5564/D (1/18 from case for 10 seconds) .............. 300C ONSS6S | 2N5564/W | _2N5565/D ELECTRICAL CHARACTERISTICS 2N5566_| 2NS5566/W_|_2N5566/D TEST CONDITIONS: 25C unless otherwise noted SYMBOL PARAMETERS CONDITIONS - MIN. MAX. UNIT lass Gate-Reverse Current Ves = - 20V, Vos =0| = 100 pA 150C 200 nA s | 8Yess Gate-Source Breakdown Voltage Ig = 124, Vps =0 , -- 40 T | Vasoft) Gate-Source Cutoff Voltage Vos = 15V, Ip = tnA 0.5 _) Vv 4 Vasif) Gate-Source Voltage Vps =O", Ig =2mA 1.0 - ! loss Saturation Drain Current (Note 1) Vos = 15V, Vag =0 5 30 mA DS(on) Static Drain Source ON Resistance ip =1mA, Veg =0 , 100 2 Common-Source Forward Transconductance f= 1kHz 7500 12,500 ymho Ms (Note 1) f= 100MHz 7000 y 9os Common-Source Output Conductance f= 1kHz 45 N | Css Common-Source Reverse Transier Capacitance | y . _ sy in -amal f=1MHz 3 F A ~ DG = 15V, Ip= = Pi M Ciss Common-Source Input Capacitance 12 i NF Spot Noise Figure f=10Hz, Rg =1M 1.0 dB c er Equivatent Short Circuit Input Noise Voltage f= 10Hz 50 = 2N5564 IN5S65 2N SYMBOL PARAMETERS CONDITIONS . 2 S566 UNIT . MIN..| MAX. | MIN. | MAX. | MIN. | MAX. psa Saturation Drain Current DSss2 Ratio (Notes 1 and 2) VDS = 15V, Vag =0 0.95 1 | 0.96 1 | 0.95 1 - M A Vaetv, Oitferential Gate-Source 7 | asi Gsai Voltage 5 10 2 mv c Ta =25C A 10 25 50 H | alvgsr-v | Gate-Source Voltage aR _ Tg = 125C ' BEL PGS2' | citferential Drift (Note 3) | YOS=15: !o=2ma T2850 WEG N a= 10 25 50 G Tg =25C 9fs1 Transconductance Ratio & @ wee (Notes 1 and 2) Vpg=18V, Ip=2mA] f=1kHz | 0.95 1 0.90 1 0.90 1 - NOTES: . Pulse test required, pulse width 300ys, duty cycle =3%. !, Assumes srnatier value in numerator. . Measured at end points, Taand Tg. 1-87