TIP110, TIP111, TIP112
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
1
DECEMBER 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●Designed for Complementary Use with
TIP115, TIP116 and TIP117
●50 W at 25°C Case Temperature
●4 A Continuous Collector Current
●Minimum hFE of 500 at 4 V, 2 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATINGSYMBOLVALUEUNIT
Collector-base voltage (IE = 0)TIP110
TIP111
TIP112VCBO
60
80
100V
Collector-emitter voltage (IB = 0)TIP110
TIP111
TIP112VCEO
60
80
100V
Emitter-base voltageVEBO5V
Continuous collector current IC4A
Peak collector current (see Note 1)ICM6A
Continuous base current IB50mA
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot50W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot2W
Unclamped inductive load energy (see Note 4)½LIC225mJ
Operating junction temperature rangeTj-65 to +150°C
Storage temperature rangeTstg-65 to +150°C
Lead temperature 3.2 mm from case for 10 secondsTL260°C
TIP110, TIP111, TIP112
NPN SILICON POWER DARLINGTONS
2
DECEMBER 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V(BR)CEOCollector-emitter
breakdown voltageIC = 30 mA
(see Note 5)IB = 0TIP110
TIP111
TIP112
60
80
100V
ICEOCollector-emitter
cut-off current
VCE= 30 V
VCE= 40 V
VCE= 50 V
IB=0
IB=0
IB=0
TIP110
TIP111
TIP112
2
2
2mA
ICBOCollector cut-off
current
VCB= 60 V
VCB= 80 V
VCB= 100 V
IE=0
IE=0
IE=0
TIP110
TIP111
TIP112
1
1
1mA
IEBOEmitter cut-off
currentVEB = 5 VIC=0 2 mA
hFEForward current
transfer ratioVCE = 4 V
VCE = 4 VIC= 1A
IC=2A(see Notes 5 and 6)1000
500
VCE(sat)Collector-emitter
saturation voltageIB = 8 mAIC=2A(see Notes 5 and 6)2.5V
VBEBase-emitter
voltageVCE = 4 VIC=2 A(see Notes 5 and 6)2.8V
VECParallel diode
forward voltageIE = 4 AIB=0(see Notes 5 and 6)3.5V
resistive-load-switching characteristics at 25°C case temperature
PARAMETERTEST CONDITIONS †MINTYPMAXUNIT
ton Turn-on timeIC = 2 A
VBE(off) = -5 VIB(on) = 8 mA
RL = 15 ΩIB(off) = -8 mA
tp = 20 µs, dc ≤ 2%2.6µs
toffTurn-off time4.5µs
3
DECEMBER 1971 - REVISED MARCH 1997
TIP110, TIP111, TIP112
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 5·01·0
hFE - Typical DC Current Gain
20000
100
1000
10000
TCS110AA
VCE = 4 V
tp = 300 µs, duty cycle < 2%
TC = -40°C
TC = 25°C
TC = 100°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 5·01·0
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
0·5
1·0
1·5
2·0 TCS110AB
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 5·01·0
VBE(sat) - Base-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
2·5
3·0 TCS110AC
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
TIP110, TIP111, TIP112
NPN SILICON POWER DARLINGTONS
4
DECEMBER 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0.01
0·1
1·0
10 SAS110AA
TIP110
TIP111
TIP112
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
025 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50
60 TIS110AA
TIP110, TIP111, TIP112
NPN SILICON POWER DARLINGTONS
5
DECEMBER 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø1,23
1,32
4,20
4,70
1 2 3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2 VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
TIP110, TIP111, TIP112
NPN SILICON POWER DARLINGTONS
6
DECEMBER 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
