PD - 97624 AUTOMOTIVE GRADE * * * * * * * * * * Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* AUIRLR120N HEXFET(R) Power MOSFET D V(BR)DSS 100V RDS(on) max. G S 0.185 ID 10A D Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. S G D-Pak AUIRLR120N G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 7.0 Pulsed Drain Current 35 IDM c PD @TC = 25C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS d Units A 48 0.32 16 W W/C V mJ EAS Single Pulse Avalanche Energy (Thermally Limited) 85 IAR Avalanche Current 6.0 A EAR dv/dt Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and 4.8 5.0 -55 to + 175 mJ V/ns TJ TSTG c e c Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) C 300 Thermal Resistance RJC RJA RJA g Parameter Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient Typ. Max. Units --- --- --- 3.1 50 110 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 01/19/11 AUIRLR120N Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS V(BR)DSS/TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current gfs IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 100 --- --- --- --- 1.0 3.1 --- --- --- --- --- 0.12 --- --- --- --- --- --- --- --- --- --- --- 0.185 0.225 0.265 2.0 --- 25 250 100 -100 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 6.0A VGS = 5.0V, ID = 6.0A VGS = 4.0V, ID = 5.0A V VDS = VGS, ID = 250A S VDS = 25V, ID = 6.0A A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 150C nA VGS = 16V VGS = -16V f f f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- --- 4.0 35 23 22 4.5 20 4.6 10 --- --- --- --- --- nC ns nH Conditions ID = 6.0A VDS = 80V VGS = 5.0V, See Fig. 6 & 13 VDD = 50V ID = 6.0A RG = 11, VGS = 5.0V, RD = 8.2, See Fig. 10 Between lead, f f LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Input Capacitance --- 440 --- and center of die contact VGS = 0V Coss Output Capacitance --- 97 --- Crss Reverse Transfer Capacitance --- 50 --- D G S VDS = 25V pF = 1.0MHz, See Fig. 5 Diode Characteristics Parameter IS Min. Typ. Max. Units Conditions --- --- 10 ISM Continuous Source Current (Body Diode) Pulsed Source Current --- --- 35 VSD (Body Diode) Diode Forward Voltage --- --- 1.3 trr Reverse Recovery Time --- 110 160 ns TJ = 25C, IF = 6.0A Qrr Reverse Recovery Charge --- 410 620 nC di/dt = 100A/s ton c Forward Turn-On Time A V MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25C, IS = 6.0A, VGS = 0V f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 4.7mH R is measured at T J approximately 90C. RG = 25, IAS = 6.0A. (See Figure 12) ISD 6.0A, di/dt 340A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 2 www.irf.com AUIRLR120N Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK MSL1 Class M2 (+/- 150V) AEC-Q101-002 Human Body Model Class H1A (+/- 500V) AEC-Q101-001 Charged Device Model Class C5 (+/- 2000V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage. www.irf.com 3 AUIRLR120N 100 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 10 1 2.5V 20s PULSE WIDTH T J = 25C 0.1 0.1 1 10 A 10 2.5V 1 100 3.0 TJ = 175C 1 VDS = 50V 20s PULSE WIDTH 6 8 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25C 4 10 A 100 Fig 2. Typical Output Characteristics 100 0.1 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 20s PULSE WIDTH T J = 175C 0.1 0.1 VDS , Drain-to-Source Voltage (V) 2 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP 10 A I D = 10A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRLR120N Ciss 600 15 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V GS , Gate-to-Source Voltage (V) C, Capacitance (pF) 800 Coss Crss 0 1 10 V DS = 80V V DS = 50V V DS = 20V 12 400 200 I D = 6.0A 100 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 VDS , Drain-to-Source Voltage (V) 10 15 20 A 25 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10s I D , Drain Current (A) ISD , Reverse Drain Current (A) 5 TJ = 175C 10 TJ = 25C 1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com A 1.4 10 100s 1ms 1 10ms TC = 25C TJ = 175C Single Pulse 0.1 1 10 100 A 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRLR120N V DS 10 VGS D.U.T. RG 8 ID, Drain Current (Amps) RD + -VDD 6 5.0V Pulse Width 1 s Duty Factor 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 VDS A 0 25 50 75 100 125 150 90% 175 TC , Case Temperature (C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com 15V L VDS D.U.T RG IAS 10V tp DRIVER + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit E AS , Single Pulse Avalanche Energy (mJ) AUIRLR120N 200 TOP BOTTOM 160 ID 2.4A 4.2A 6.0A 120 80 40 A 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 5.0 V QG QGS .2F .3F D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 AUIRLR120N Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D.U.T + + - - + + RG * * * * Driver Gate Drive Period P.W. - dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= VDD P.W. Period * VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 8 www.irf.com AUIRLR120N D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak Part Marking Information Part Number AULR120N YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRLR120N D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRLR120N Ordering Information Base part number Package Type AUIRLR120N Dpak www.irf.com Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 75 2000 3000 3000 AUIRLR120N AUIRLR120NTR AUIRLR120NTRL AUIRLR120NTRR 11 AUIRLR120N IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. 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