BC850C - Continental Device India Limited

Continental Device India Limited Data Sheet Page 1 of 3

SILICON PLANAR EPITAXIAL TRANSISTORS

N–P–N transistors

Marking

BC849 = 2D

BC849B = 2B

BC849C = 2C

BC850 = 2H

BC850B = 2F

8C850C = 2G

ABSOLUTE MAXIMUM RATINGS BC849 BC850

Collector–emitter voltage (VBE = 0) VCES max. 30 50 V

Collector–emitter voltage (open base) VCE0 max. 30 45 V

Collector current (peak value) ICM max. 200 200 mA

Total power dissipation up to Tamb = 25 °C Ptot max. 250 250 mW

Junction temperature Tjmax. 150 150 ° C

Small–signal current gain > 240 240

IC = 2 mA; VCE = 5 V; f = 1 kHz hfe < 900 900

Transition frequency

IC = 10 mA; VCE = 5 V, f = 100 MHz fT

> 100 > 100

MHz

Noise figure at RS = 2 kΩ

IC = 200 µA; VCE = 5 V typ. 1,4 1,4 dB

f = 30 Hz to 15 kHz F <43dB

f = 1 kHz; B = 200 Hz F typ. 1,2 1 dB

f = 10 Hz to 50 Hz (equivalent noise voltage) Vn< — 0,135 mV

BC849

BC850

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

SOT-23 Formed SMD Package

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

Continental Device India Limited Data Sheet Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values BC849 BC850

Collector–base voltage (open emitter) VCBO max. 30 50 V

Collector–emitter voltage (VBE = 0) VCES max. 30 50 V

Collector–emitter voltage (open base) VCEO max. 30 45 V

Emitter–base voltage (open collector) VEBO max. 5 V

Collector current (d.c.) ICmax. 100 mA

Collector current (peak value) ICM max. 200 mA

Emitter current (peak value) –IEM max. 200 mA

Base current (peak value) IBM max. 200 mA

Total power dissipation up to Tamb = 25 °C Ptot max. 250 mW

Storage temperature Tstg –55 to +150 ° C

Junction temperature Tjmax. 150 ° C

THERMAL RESISTANCE

From junction to ambient* Rth j–a = 500

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector cut–off current

IE = 0; VCB = 30 V ICBO <15 nA

IE = 0; VCB = 30 V; Tj = 150 °C ICBO

<5µA

Base emitter voltage

IC = 2 mA; VCE = 5 V VBE typ. 660 mV

580 to 700 mV

IC = 10 mA; VCE = 5 V VBE < 770 mV

Saturation voltages

IC = 10 mA; IB = 0,5 mA VCEsat typ. 90 mV

250 mV

VBEsat typ. 700 mV

IC = 100 mA; IB = 5 mA VCEsat typ. 200 mV

< 600 mV

VBEsat typ. 900 mV

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 10 V Cctyp. 2,5 pF

Transition frequency at f = 100 MHz

IC = 10 mA; VCE = 5 V fT

> 100

MHz

Small signal current gain at f = 1 kHz

IC = 2 mA; VCE = 5 V hfe 110 – 800

Noise figure at RS = 2 kΩ , BC849 BC850

IC = 200 µA; VCE = 5 V typ. 1,4 1,4 dB

f = 30 Hz to 15 kHz F < 4 3 dB

typ. 1,2 1 dB

f = 1 kHz; B = 200 Hz F < 4 4 dB

BC849

BC850

Continental Device India Limited Data Sheet Page 3 of 3

Equivalent noise voltage at RS = 2 kΩ

IC = 200 µA; VCE = 5 V

f = 10 Hz to 50 Hz; Tamb = 25°C Vnmax. — 0,135 mV

BC849B BC849C

BC850B BC850C

D.C. current gain

IC = 10 µA; VCE = 5V hFE

typ. 150 270

> 200 420

Ic = 2 mA; VCE = 5 V hFE typ. 290 520

< 450 800

BC849

BC850

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Continental Device India Limited

C-120 Naraina Industrial Area, New Delhi 110 028, India.

Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119

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