2SB1260 - Unisonic Technologies Co., Ltd.

UNISONIC TECHNOLOGIES CO., LTD

2SB1260

PNP SILICON TRANSISTOR

www.unisonic.com.tw 1 of 4

QW-R208-017,C

POWER TRANSISTOR

 DESCRIPTION

The UTC 2SB1260 is a epitaxial planar type PNP silicon

transistor.

 FEATURES

*High breakdown voltage and high current.

BV

CEO

= -80V, I

C

= -1A

*Good h

FE

linearity.

*Low V

CE(SAT)

1

TO-252

1

SOT-89

*Pb-free plating product number: 2SB1260L

 ORDERING INFORMATION

Order Number Pin Assignment

Normal Lead Free Plating Package 1 2 3 Packing

2SB1260-x-AB3-R 2SB1260L-x-AB3-R SOT-89 B C E Tape Reel

2SB1260-x-TN3-R 2SB1260L-x-TN3-R TO-252 B C E Tape Reel

2SB1260-x-TN3-T 2SB1260L-x-TN3-T TO-252 B C E Tube

2SB1260L-x-AB3-R (1)P ac k ing T y pe

(2) P ack age T y pe

(3)Rank

(1 ) B: Ta pe Bo x, K: Bu lk, R: Ta pe R ee l

(2) AB3: SO T -89, TN3: T O -252

(3) refer to Classification of h

FE

( 4) Lead P lating ( 4) L: Lead Free P latin g, B lank: Pb/S n

2SB1260

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2 of 4

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QW -R208-017,C

 ABSOLUATE MAXIUM RATINGS

(Ta = 25℃)

PARAMETER SYMBOL RATINGS UNIT

Collector -Base Voltage V

CBO

-80 V

Collector -Emitter Voltage V

CEO

-80 V

Emitter -Base Voltage V

EBO

-5 V

Peak Collector Current (single pulse, Pw=100ms) I

CM

-2 A

DC Collector Current I

C

-1 A

SOT-89 0.5 W

Power Dissipation TO-252 P

D

1.9 W

Operating Temperature T

J

+150 ℃

Storage Temperature T

STG

-40 ~ +150 ℃

Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm

2

or larger.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS

(Ta= 25℃, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector Base Breakdown Voltage BV

CBO

I

C

= -50μA -80 V

Collector Emitter Breakdown Voltage BV

CEO

I

C

= -1mA -80 V

Emitter Base Breakdown Voltage BV

EBO

I

E

= -50μA -5 V

Collector Cut-Off Current I

CBO

V

CB

=-60V -1

μA

Emitter Cut-Off Current I

EBO

V

EB

=-4V -1

μA

DC Current Gain(Note 1) h

FE

V

CE

=-3V, I

OUT

=-0.1A 82 390

Collector-Emitter Saturation Voltage V

CE(SAT)

I

C

=-500mA, I

B

=-50mA -0.4 V

Transition Frequency f

T

V

CE

= -5V, I

E

=50mA, f=30MHz 100 MHz

Output Capacitance Cob V

CB

=-10V, I

E

=0, f=1MHz 25 pF

Note 1: Pulse test: P

W

<300µs, Duty Cycle<2%

 CLASSIFICATION OF h

FE

RANK P Q R

RANGE 82 ~ 180 120 ~ 270 180 ~ 390

2SB1260

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 3 of 4

www.unisonic.com.tw

QW -R208-017,C

■ TYPICAL CHARACTERICS

0-0.2

-1000

-0.1

Base to Emitter Voltage, V

BE

(V)

Grounded Em itter Propagation

Characteristics

Collector Current, Ic(mA)

-1 -2 -5 -10-20

200

50

Collector Current, Ic(mA)

DC Current Ga in vs. Collector

Current

DC Current Gain, h

FE

100

-0.4 -0.6 -0.8 -1.6-1.4-1.2-1.0

-1

-10

0

-1.0

0

Collector to Emitter Voltage, V

CE

(V)

Grounded Emitter Output

Characteristics

Colle ctor Current, Ic(mA)

-0.2

-0.4 -0.8 -1.6 -2.0-1.2

-0.4

-0.6

-0.8

I

B

=0mA

Ta=25℃

-0.15mA

-0.1mA

-0.05mA

-50-100-200-500-1000

500

1000

1251020

5

1

Emit te r Cu rrent, I

E

(mA)

Collector-emitter Saturation Voltage

vs. Collector Current

Collector Saturation Voltage, V

CE(SAT)

( V)

2

50 100200 5001000

10

20

50

100

Collector to Base Voltage, V

CB

(V)

Collector Output Capacitance vs.

Collector-Base Vol tage

Collector Output Capacitance, Cob (pF)

-100

V

CE

= -5V

Ta=25℃

-0.2 -0.6 -1.0 -1.4 -1.8

-0.2mA

-0.25mA

-0.3mA

-0.35mA

-0.4mA

-0.45mA

20

10 -2000

Vc

E

= -1V

Vc

E

= -3V

Ta=25℃

-1 -2 -5 -10-20

-0.2

-0.05

-0.1

-50-100-200-500-1000

-0.5

-0.02

-0.01 -2000

Collector Current, Ic(mA)

-1

-2 Ta=25℃

Ic/I

B

=20

10

Transition Fr equency, f

T

(MHz)

200

500

1000 Ta=25℃

V

CE

= -5V

Gain Bandwidth Product v s. Emitter

Current

-0.1 -0.2 -0.5-1 -2

5

1

2

-5 -10 -20 -50 -100

10

20

50

100

200

500 Ta=25℃

f=1MHz

1000

I

E

=0A

2SB1260

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 4 of 4

www.unisonic.com.tw

QW -R208-017,C

 TYPICAL CHARACTERICS(Cont.)

-0.5 -1 -2

-0.05

Collector to Emitter Voltage, V

CE

(V)

Safe Operating Area

Colle ctor Current, Ic (A)

-5 -10 -20 -50

-0.1

-0.2

-100

1000

-0.1

20

Emitter To Base Voltage, V

EB

(V)

Emitter Input Capaci tance vs. Emitter-

Base Voltage

Emitter Input Capacitance, Cib (pF)

50

-0.2 -0.5 -2 -5-1

100

200

-10

500 I

c

=0A -0.5

-1

-2

Ta=25℃

f=1MHz

PW=10ms

PW=100ms

DC

Ta=25℃

*Single pulse

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believ ed to be accurate

and reliable and m ay be changed without notice.