P-Channel QFET(R) MOSFET - 60 V, - 27 A, 70 m Features Description * - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, ID = - 13.5 A This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. * Low Gate Charge (Typ. 33 nC) * Low Crss (Typ. 120 pF) * 100% Avalanche Tested * 175C Maximum Junction Temperature Rating S G G D TO-220 S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current - Pulsed (Note 1) D FQP27P06 -60 Unit V -27 A -19.1 A -108 A VGSS Gate-Source Voltage 25 V EAS Single Pulsed Avalanche Energy (Note 2) 560 mJ IAR Avalanche Current (Note 1) -27 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 12 -7.0 120 0.8 -55 to +175 mJ V/ns W W/C C 300 C FQP27P06 1.25 Unit C/W dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case, Max. RCS Thermal Resistance, Case-to-Sink, Typ. 0.5 C/W RJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W (c)2001 Semiconductor Components Industries, LLC. October-2017,Rev.3 Publication Order Number: FQP27P06/D FQP27P06 P-Channel QFET(R) MOSFET FQP27P06 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = -250 A, Referenced to 25C IDSS IGSSF Zero Gate Voltage Drain Current Min Typ Max Unit -60 -- -- V -- -0.06 -- V/C VDS = -60 V, VGS = 0 V -- -- -1 A VDS = -48 V, TC = 150C -- -- -10 A Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -13.5 A -- 0.055 0.07 gFS Forward Transconductance VDS = -30 V, ID = -13.5 A -- 12.4 -- S Ciss Input Capacitance 1100 1400 pF Output Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- Coss -- 510 660 pF Crss Reverse Transfer Capacitance -- 120 155 pF td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time On Characteristics Dynamic Characteristics Switching Characteristics tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 V, ID = -13.5 A, RG = 25 (Note 4) VDS = -48 V, ID = -27 A, VGS = -10 V (Note 4) -- 18 45 ns -- 185 380 ns -- 30 70 ns -- 90 190 ns -- 33 43 nC -- 6.8 -- nC -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -27 A ISM -- -- -108 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -27 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -27 A, dIF / dt = 100 A/s Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Starting TJ = 25C 3. ISD -27A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially independent of operating temperature www.onsemi.com 2 -- 105 -- ns -- 0.41 -- C FQP27P06 P-Channel QFET(R) MOSFET Elerical Characteristics 2 2 10 10 VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 1 10 -ID , Drain Current [A] -ID, Drain Current [A] Top : 0 1 10 175 25 0 10 -55 Notes : 1. VDS = -30V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 10 -1 -1 0 10 10 1 10 2 10 4 Figure 1. On-Region Characteristics 2 0.20 -IDR , Reverse Drain Current [A] RDS(on) [], Drain-Source On-Resistance 10 10 0.16 VGS = - 10V 0.12 VGS = - 20V 0.08 0.04 Note : TJ = 25 1 10 0 10 175 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test -1 0 10 20 30 40 50 60 70 80 10 90 100 110 120 130 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3000 12 -VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 Coss Capacitance [pF] 8 Figure 2. Transfer Characteristics 0.24 0.00 6 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] 2000 Ciss Notes : 1. VGS = 0 V 2. f = 1 MHz 1500 1000 Crss 500 0 -1 10 0 10 10 VDS = -30V 8 6 4 2 Note : ID = -27 A 0 1 10 VDS = -48V 0 5 10 15 20 25 30 35 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQP27P06 P-Channel QFET(R) MOSFET Typical Characteristics (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = -250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = -10 V 2. ID = -13.5 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 30 Operation in This Area is Limited by R DS(on) 25 2 -ID, Drain Current [A] 100 s 1 ms 10 ms 1 DC 10 0 10 Notes : o 1. TC = 25 C 20 15 10 5 o 2. TJ = 175 C 3. Single Pulse 0 25 -1 10 0 1 10 2 10 10 50 Figure 9. Maximum Safe Operating Area 10 75 100 125 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 N o te s : 1 . Z J C ( t ) = 1 .2 5 /W M a x . 2 . D u t y F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z J C( t ) 0 .2 0 .1 10 -1 0 .0 5 PDM 0 .0 2 0 .0 1 10 t1 s in g le p u ls e t2 -2 10 -5 10 -4 150 TC, Case Temperature [] -VDS, Drain-Source Voltage [V] Z JC(t), Thermal Response -ID, Drain Current [A] 10 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 175 FQP27P06 P-Channel QFET(R) MOSFET Typical Characteristics FQP27P06 P-Channel QFET(R) MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on td(on) VDD VGS VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD VDD VDS (t) ID (t) DUT -10V IAS BVDSS tp www.onsemi.com 5 Time + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt www.onsemi.com 6 VDD FQP27P06 P-Channel QFET(R) MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms TO-220 www.onsemi.com 7 FQP27P06 P-Channel QFET(R) MOSFET Package Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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