2N696
NPN
SILICON TRANSISTOR
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• SCREENING OPTIONS AVAILABLE
APPLICATIONS:
• General Purpose Amplifier
• Switching Circuits
VCBO Collector – Base Voltage
VCER Collector – Emitter Voltage (IB= 0)
VEBO Emitter – Base Voltage (IB= 0)
PDTotal Device Dissipation @ TA= 25°C
PDTotal Device Dissipation @ TC= 25°C
TJ, TSTG Operating and Storage Junction Temperature Range
RθJA Thermal Resistance Junction to Ambient
RθJC Thermal Resistance Junction to Case
60V
40V
5V
0.6W
2.0W
–65 to +200°C
292°C/W
87.5°C/W
MECHANICAL DATA
Dimensions in mm (inches)
TO–39(TO205AD) METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base PIN 3 – Collector
0.89
(0.035)
max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 6602
Issue 1
2N696
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 6602
Issue 1
Parameter Test Conditions Min. Typ. Max. Unit
IC= 100μAI
B= 0A
IC= 100mA RBE = 10Ω
IE= 100μAI
C= 0
VCB = 30V VBE = 0V
TC= 150°C
IC= 150mA IB= 15mA
IC= 150mA IB= 15mA
VCE = 10V IC= 150mA
VCB = 10V IE= 0
f= 1.0 MHz
VCB = 10V IC= 50mA
f= 20 MHz
Collector - Base Breakdown
Voltage
Collector - Emitter Breakdown
Voltage
Emitter - Base Breakdown
Voltage
Collector Cut-off Current
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
DC Current Gain
Output Capacitance
Current Gain Bandwidth
Product
60
40
5
1.0
100
1.5
1.3
20 60
35
40
V
V
V
μA
V
V
-
pF
MHz
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
VCBO(BR)*
VCER(BR)*
VEBO(BR)*
ICBO
VCE(sat)*
VBE(sat)*
hFE
Cob
fT
(*) Pulse test: tp≤300μs , δ ≤ 1.5%
