11/24/09
IRLML0100TRPbF
HEXFET® Power MOSFET
PD - 97157
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
Application(s)
Micro3TM (SOT-23)
IRLML0100TRPbF
D
S
G
3
1
2
Load/ System Switch
Features and Benefits
Features Benefits
Industry-standar d pinout Multi-vendor compatibilit
y
Compatible with ex isting Surface M ount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen Environmental ly friendly
MSL1 Increased reliability
VDS 100 V
VGS Max ± 16 V
RDS(on) max
(@VGS = 10V ) 220 m
:
RDS(on) max
(@VGS = 4.5V) 235 m
:
Abs olute Maximum Ratings
Symbol
Parameter
Units
VDS Drain-Sou r c e V o l t age V
ID @ TA = 25°C Contin uous Drain Curr ent, VGS @ 10V
ID @ TA = 70°C Contin uous Drain Curr ent, VGS @ 10V
IDM Pu ls ed D r ai n C ur rent
PD @TA = 25°C Maximum Power Dissipation
PD @TA = 70°C Maximum Power Dissipation
Li ne ar Der at i ng Factor W/°C
VGS Gate- to- Sour c e V o ltag e V
TJ, TSTG Junction and Storage Temperature R ange °C
Thermal Resi stance
Symbol
Parameter
Typ.
Max.
Units
RθJA Junction-to-Ambient
e
––– 100
RθJA Junction-to-Ambient (t< 10s)
f
––– 99
W
°C/W
A
Max.
1.6
1.3
-55 to + 150
± 16
0.01
100
1.3
0.8
7.0
IRLML0100TRPbF
2www.irf.com
Electric Characteristics @ TJ = 25°C (unless other wise s peci f ied)
Symbol Parameter Min. Typ. Max. Units
V(BR)DSS D r ai n- to- Sour c e B reakdow n V ol t a ge 100 ––– ––– V
ΔV(BR)DSS/ΔTJ Br eakdown Voltage Temp. Co efficient ––– 0.10 ––– V C
––– 190 235
––– 178 220
VGS(th) G ate Th r es hold V o ltage 1.0 ––– 2. 5 V
IDSS ––– –– 20
––– ––– 250
IGSS Gate-to- Sour c e Fo r w ard Lea kage ––– ––– 100
Gate- to- Sour c e R ev e r s e Leakage –– –– -100
RGInternal Gate Resistance ––– 1.3 ––– Ω
gfs For war d Tr ansconductance 5.7 ––– ––– S
QgTotal Gate Charge ––– 2.5 –––
Qgs Gate-to-Source Charge –– 0.5 –––
Qgd Gate-to-Drain ("Miller" ) Charg e ––– 1.2 –––
td(on) Turn-On Delay Time ––– 2.2 –––
trRise Time ––– 2.1 ––
td(off) Turn-Of f Delay Ti me ––– 9.0 –––
tfFall Time –– 3.6 –––
Ciss Input Capac ita nc e ––– 290 ––
Coss Output Capacit a nc e ––– 27 –––
Crss Reve rse Tr a ns fer Capacit a nc e ––– 13 –––
Source - Drain Rati ngs and Characteristics
Symbol Parameter Min. Typ. Max. Units
ISContinuous Source Curren t
(Body Diode)
ISM Puls e d Sourc e Curren t
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 20 30 ns
Qrr Reverse Recovery Charge ––– 13 20 nC
––– ––
––– ––
pF
A
1.1
7.0
VDD =50V
d
nA
nC
ns
VDS = VGS, ID = 25µA
VDS =100V , V GS = 0V
VDS = 100V, VGS = 0V, TJ = 125° C
RDS(on) VGS = 10V, ID = 1.6A
d
St atic Dr ain- to- Sour c e O n- Resistance
Drain-to- Sour c e Le akage Cu rr en t µA
mΩ
Conditions
VGS = 0V, ID = 250µ A
Reference to 2 5 °C, ID = 1mA
VGS = 4.5V, ID = 1.3A
d
MOSFET symbol
showing the
VDS =50V
Conditions
VGS = 4.5V
VGS = 0V
VDS = 25V
ƒ = 1. 0M H z
RG = 6.8Ω
VGS = 4.5V
d
di /dt = 100A s
d
VGS = 16V
VGS = -16V
TJ = 25°C, IS = 1.1A, VGS = 0V
d
integra l revers e
p-n junction diode.
VDS = 50V , I D = 1.6A
ID = 1.6A
ID = 1.0A
TJ = 25°C, VR = 50 V, IF=1.1A
IRLML0100TRPbF
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-Sour ce Volt age (V)
0.01
0.1
1
10
ID, Drain-to-Source Current
(A)
TJ = 25°C
TJ = 150°C
VDS = 50V
60µs PULS E WI DTH
-60 -40 -20 020 40 60 80 100120140160
TJ , Juncti on Temperat ure (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 1.6A
VGS = 10V
0.1 110 100
VDS, Dr ain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
BOTTOM 2.25V
60µs PULSE WIDT H
Tj = 25°C
2.25V
0.1 110 100
VDS, Dr ain-t o-Source V oltage ( V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
60µs PULSE WIDT H
Tj = 150°C
2.25V
VGS
TOP 10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
BOTTOM 2.25V
IRLML0100TRPbF
4www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Dr ain-t o-Source Voltage (V)
1
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
01234567
QG Tot al Gate Charge (nC )
0
4
8
12
16
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 1.6A
0.4 0.6 0.8 1.0
VSD, Sour ce-to-D rain Voltage ( V)
0.01
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0.1 1 10 100
VDS, Drain-t o-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
TA = 25° C
Tj = 150°C
Single P ulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
IRLML0100TRPbF
www.irf.com 5
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
VDD
25 50 75 100 125 150
TA , Am bient T em perature (°C)
0.0
0.5
1.0
1.5
2.0
ID , Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110
t1 , Rectangular Pulse D uration (sec)
0.01
0.1
1
10
100
1000
Thermal Response ( Z
thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
IRLML0100TRPbF
6www.irf.com
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
1K
VCC
DUT
0
L
S
D
G
20K
Vds
Vgs
I
d
Vgs(th)
Qgs1
Qgs2QgdQgodr
2 4 6 8 10
VGS, Gate -to -Source Voltage (V)
150
200
250
300
350
400
450
500
550
600
RDS(on), Drain-to -Source On Resistance (m
Ω)
ID = 1. 6A
TJ = 25°C
TJ = 125°C
0 2 4 6 8
ID, D rain Current (A)
170
190
210
230
250
270
RDS(on), Drain-to -Source On Resistance (
mΩ)
Vgs = 10V
Vgs = 4.5V
IRLML0100TRPbF
www.irf.com 7
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature Fig 16. Typical Power Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Temperat ure ( °C )
0.5
1.0
1.5
2.0
2.5
VGS(th), Gate threshold Voltage (V)
ID = 25uA
ID = 250uA
1E-005 0.0001 0.001 0.01 0.1 110
Time (sec)
0
20
40
60
80
100
Power (W)
IRLML0100TRPbF
8www.irf.com
Micro3 (SOT-23/TO-236AB) Part Marking Information
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
e
E1 E
D
A
B
0.15 [0.006]
e1
12
3
MCBA
5
6
6
5
NOTES:
b
A1 3X
A
A2
ABC
M0.20 [0.008]
0.10 [0.004] C
C
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOE
S
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
0.89 1.12
SYMBOL MAXMIN
A1
b
0.01 0.10
c0.30 0.50
D0.08 0.20
E2.80 3.04
E1 2.10 2.64
e1.20 1.40
A
0.95 BSC
L0.40 0.60
08
MILLIMETERS
A2 0.88 1.02
e1 1.90 BSC
REF0.54L1 BSC0.25
L2

BSC

REF
%6&

INCHES
80

%6&






0.0004
MIN MAX

DIMENSIONS
0.972
1.900
Recommended Footprint
0.802 0.950 2.742
3X L
c
L2
H 4 L1
7
F = IRLML6401 A2001 A27
Notes: This part marking information applies to devices produced after 02/26/2001
CODE
LOT
W = WEEK
Y = YEAR
PART NUMBER
E = IRLML6402
PART NUMBER CODE REFERENCE:
D = IRLML5103
C = IRLML6302
B = IRLML2803
A = I R LML24 02
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52 ) IF PRECEDED BY A LETTER
Y
82008
32003
12001
YEAR
2002 2
52005
2004 4
2007
2006 7
6
2010 0
2009 9
YEAR Y
C03
WORK
WEEK
01
02 A
W
B
04 D
24
26
25 X
Z
Y
WORK
WEEK W
H = IRLML52 03
G = IRLML2502
K
H
G
F
E
D
C
B
2006
2003
2002
2005
2004
2008
2007
2010
2009 J
Y51
29
28
30 C
B
D
50 X
52 Z
Note: A line above the work week
(as shown here) indicates Lead - Fr ee.
I = IRLML003 0
J = IRLM L2 0 3 0
L = IRLML0060
M = IRLML0040
K = IRLML0100
N = I R LML20 60
IRLML0100TRPbF
www.irf.com 9
Micro3Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326
)
7.9 ( .312
)
1.32 ( .051
)
1.12 ( .045
)
9.90 ( .390 )
8.40 ( .331 )
178.0 0
( 7.008 )
MAX.
NOTES:
1. CONTRO LLIN G DIMEN SION : MIL LIM ETER .
2. OUTLINE CONFORMS TO EIA-481 & EIA -541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRLML0100TRPbF
10 www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/2009
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
MS L1
(per IPC/J EDEC J - ST D-020D†††
)
RoHS compliant Yes
Micro3
Qualifi cat ion informati on
Moistur e Sensit ivity Level
Qualif ic ation level Cons umer††
(per JEDEC JESD47F †† guidelines )
Note
Form Quantity
IRLML0100TRP bF Micro3 Tape and Reel 3000
Orderab le part number Package Type Stand ard Pack