IRLML0100TRPbF
2www.irf.com
Electric Characteristics @ TJ = 25°C (unless other wise s peci f ied)
Symbol Parameter Min. Typ. Max. Units
V(BR)DSS D r ai n- to- Sour c e B reakdow n V ol t a ge 100 ––– ––– V
ΔV(BR)DSS/ΔTJ Br eakdown Voltage Temp. Co efficient ––– 0.10 ––– V /° C
––– 190 235
––– 178 220
VGS(th) G ate Th r es hold V o ltage 1.0 ––– 2. 5 V
IDSS ––– ––– 20
––– ––– 250
IGSS Gate-to- Sour c e Fo r w ard Lea kage ––– ––– 100
Gate- to- Sour c e R ev e r s e Leakage ––– ––– -100
RGInternal Gate Resistance ––– 1.3 ––– Ω
gfs For war d Tr ansconductance 5.7 ––– ––– S
QgTotal Gate Charge ––– 2.5 –––
Qgs Gate-to-Source Charge ––– 0.5 –––
Qgd Gate-to-Drain ("Miller" ) Charg e ––– 1.2 –––
td(on) Turn-On Delay Time ––– 2.2 –––
trRise Time ––– 2.1 –– –
td(off) Turn-Of f Delay Ti me ––– 9.0 –––
tfFall Time –– – 3.6 –––
Ciss Input Capac ita nc e ––– 290 – ––
Coss Output Capacit a nc e ––– 27 –––
Crss Reve rse Tr a ns fer Capacit a nc e ––– 13 –––
Source - Drain Rati ngs and Characteristics
Symbol Parameter Min. Typ. Max. Units
ISContinuous Source Curren t
(Body Diode)
ISM Puls e d Sourc e Curren t
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 20 30 ns
Qrr Reverse Recovery Charge ––– 13 20 nC
––– –––
––– –––
pF
A
1.1
7.0
VDD =50V
d
nA
nC
ns
VDS = VGS, ID = 25µA
VDS =100V , V GS = 0V
VDS = 100V, VGS = 0V, TJ = 125° C
RDS(on) VGS = 10V, ID = 1.6A
d
St atic Dr ain- to- Sour c e O n- Resistance
Drain-to- Sour c e Le akage Cu rr en t µA
mΩ
Conditions
VGS = 0V, ID = 250µ A
Reference to 2 5 °C, ID = 1mA
VGS = 4.5V, ID = 1.3A
d
MOSFET symbol
showing the
VDS =50V
Conditions
VGS = 4.5V
VGS = 0V
VDS = 25V
ƒ = 1. 0M H z
RG = 6.8Ω
VGS = 4.5V
d
di /dt = 100A/µ s
d
VGS = 16V
VGS = -16V
TJ = 25°C, IS = 1.1A, VGS = 0V
d
integra l revers e
p-n junction diode.
VDS = 50V , I D = 1.6A
ID = 1.6A
ID = 1.0A
TJ = 25°C, VR = 50 V, IF=1.1A