PD - 97157 IRLML0100TRPbF HEXFET(R) Power MOSFET VDS VGS Max 100 16 V V RDS(on) max 220 m : 235 m : (@VGS = 10V) RDS(on) max (@VGS = 4.5V) G 1 3 D S Micro3TM (SOT-23) IRLML0100TRPbF 2 Application(s) * Load/ System Switch Features and Benefits Benefits Features Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1 Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability results in Absolute Maximum Ratings Max. Units VDS Symbol Drain-Source Voltage Parameter 100 V ID @ TA = 25C Continuous Drain Current, VGS @ 10V 1.6 ID @ TA = 70C Continuous Drain Current, VGS @ 10V 1.3 IDM Pulsed Drain Current 7.0 PD @TA = 25C Maximum Power Dissipation 1.3 PD @TA = 70C Maximum Power Dissipation 0.8 Linear Derating Factor 0.01 VGS Gate-to-Source Voltage 16 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 C A W W/C Thermal Resistance Symbol Parameter e RJA Junction-to-Ambient RJA Junction-to-Ambient (t<10s) f Typ. Max. --- 100 --- 99 Units C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 11/24/09 IRLML0100TRPbF Electric Characteristics @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Units 100 --- --- --- 0.10 --- --- 190 235 --- 178 220 1.0 --- 2.5 --- --- 20 --- --- 250 Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 RG Internal Gate Resistance --- 1.3 --- gfs Forward Transconductance 5.7 --- --- S Qg Total Gate Charge --- 2.5 --- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS IGSS Drain-to-Source Leakage Current V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m V A d d VGS = 4.5V, ID = 1.3A VGS = 10V, ID = 1.6A VDS = VGS, ID = 25A VDS =100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C nA VGS = 16V VGS = -16V VDS = 50V, ID = 1.6A ID = 1.6A nC Qgs Gate-to-Source Charge --- 0.5 --- Qgd Gate-to-Drain ("Miller") Charge --- 1.2 --- VGS = 4.5V td(on) Turn-On Delay Time --- 2.2 --- VDD =50V tr Rise Time --- 2.1 --- td(off) Turn-Off Delay Time --- 9.0 --- tf Fall Time --- 3.6 --- VGS = 4.5V Ciss Input Capacitance --- 290 --- VGS = 0V Coss Output Capacitance --- 27 --- Crss Reverse Transfer Capacitance --- 13 --- ns VDS =50V d d ID = 1.0A RG = 6.8 pF VDS = 25V = 1.0MHz Source - Drain Ratings and Characteristics Symbol IS Parameter Continuous Source Current Min. Typ. Max. Units --- --- 1.1 (Body Diode) ISM Pulsed Source Current c A --- --- Conditions MOSFET symbol showing the integral reverse 7.0 (Body Diode) p-n junction diode. VSD Diode Forward Voltage --- --- 1.3 TJ = 25C, IS = 1.1A, VGS = 0V trr Reverse Recovery Time --- 20 30 ns TJ = 25C, VR = 50V, IF=1.1A Qrr Reverse Recovery Charge --- 13 20 nC di/dt = 100A/s 2 V d d www.irf.com IRLML0100TRPbF 100 100 TOP 10 BOTTOM 60s PULSE WIDTH Tj = 150C VGS 10.0V 4.50V 3.50V 3.30V 3.25V 2.50V 2.35V 2.25V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 60s PULSE WIDTH Tj = 25C 1 0.1 TOP 10 BOTTOM VGS 10.0V 4.50V 3.50V 3.30V 3.25V 2.50V 2.35V 2.25V 1 2.25V 2.25V 0.01 0.1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 10 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(A) 1 VDS, Drain-to-Source Voltage (V) TJ = 150C 1 0.1 TJ = 25C VDS = 50V 60s PULSE WIDTH 0.01 ID = 1.6A VGS = 10V 2.0 1.5 1.0 0.5 1.5 2.0 2.5 3.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLML0100TRPbF 10000 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd 1000 C, Capacitance (pF) 16 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Ciss 100 Coss Crss 10 ID= 1.6A VDS= 80V VDS= 50V VDS= 20V 12 8 4 0 1 0 1 10 1 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 5 6 7 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 3 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 10 TJ = 150C 1 0.1 TJ = 25C OPERATION IN THIS AREA LIMITED BY R DS (on) 10 100sec 1 1msec 0.1 TA = 25C Tj = 150C Single Pulse VGS = 0V 10msec 0.01 0.01 0.4 0.6 0.8 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2 QG Total Gate Charge (nC) 1.0 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLML0100TRPbF 2.0 RD V DS ID , Drain Current (A) VGS 1.5 D.U.T. RG + - VDD VGS 1.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 0.5 VDS 90% 0.0 25 50 75 100 125 150 TA , Ambient Temperature (C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response ( ZthJA ) 1000 100 D = 0.50 0.20 0.10 0.05 10 0.02 0.01 1 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 600 ( ) RDS(on), Drain-to -Source On Resistance m RDS(on), Drain-to -Source On Resistance (m) IRLML0100TRPbF ID = 1.6A 550 500 450 400 TJ = 125C 350 300 250 TJ = 25C 200 150 2 4 6 8 10 270 250 Vgs = 4.5V 230 Vgs = 10V 210 190 170 0 2 4 6 8 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance Vs. Drain Current Fig 12. Typical On-Resistance Vs. Gate Voltage Id Vds Vgs L D VCC 0 Vgs(th) Qgodr Qgd 20K 1K S Qgs2 Qgs1 Fig 14a. Basic Gate Charge Waveform 6 DUT G Fig 14b. Gate Charge Test Circuit www.irf.com IRLML0100TRPbF 100 80 2.0 Power (W) VGS(th), Gate threshold Voltage (V) 2.5 1.5 ID = 25uA 60 40 ID = 250uA 1.0 20 0 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com 1E-005 0.0001 0.001 0.01 0.1 1 10 Time (sec) Fig 16. Typical Power Vs. Time 7 IRLML0100TRPbF Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) DIMENSIONS A 6 5 SYMBOL D A A1 A2 b c D E E1 e e1 L L1 L2 A A2 3 6 C E E1 1 2 0.15 [0.006] M C B A 0.10 [0.004] C A1 5 B 3X b e 0.20 [0.008] M C B A NOTES: e1 H 4 MILLIMETERS L1 Recommended Footprint c 0.972 0.950 L2 0.802 3X L 7 1.900 INCHES MIN MAX MIN 0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0 1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8 MAX 0.0004 %6& %6& REF BSC 0 8 2.742 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Micro3 (SOT-23/TO-236AB) Part Marking Information Notes : T his part marking information applies to devices produced after 02/26/2001 W = (1-26) IF PRECEDE D BY LAS T DIGIT OF CALE NDAR YEAR PART NUMBER Y = YEAR W = WEE K LOT CODE PART NUMBER CODE REF ERE NCE : A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0100 L = IRLML0060 M = IRLML0040 N = IRLML2060 Note: A line above the work week (as shown here) indicates Lead - Free. YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 1 2 3 4 5 6 7 8 9 0 WORK WE EK W 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRECEDE D BY A LET TE R YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 A B C D E F G H J K WORK WE EK W 27 28 29 30 A B C D 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRLML0100TRPbF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRLML0100TRPbF Orderable part number Package Type IRLML0100TRPbF Micro3 Standard Pack Form Quantity Tape and Reel 3000 Note Qualification information Cons umer Qualification level (per JE DE C JE S D47F guidelines ) MS L1 Moisture Sensitivity Level Micro3 RoHS compliant (per IPC/JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in square Cu board Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/2009 10 www.irf.com