PNP Germanium Transistors PNP Germanium RF Alloy Transistors in TO1 and TOS metal cases Type Maximum ratings Characteristics at To 4p= 25C Case = BVceq BYcgq =BYVegpo tom Prot! Tam NE Vcellc)S Nee (VoellelS hee cell) Vv V mA mW C (VimA) (VimA) (V/mA) ASY 26 -TO5 15 30 20 200 150 85 30.,.80 (1/20) - ASY 27 TOS 15 25 20 200 150 85 50... 150 (1/20) = ASY54N TO1 10 30 30 75 75 20... 100 (4.5/1) 40 (1/10) 38 (1/50) ASY 55N TO} 5 20 15 75 75 20... 150 (4.5/1) 60 (1/10) 60 _(1/50) ASY56N TO1 10 16 12 75 75 25...60 (0/10) >25 (0/50) ASY57N TO} 10 16 12 75 75 30...80 (0/10) >30 (0/50) ASY58N 101 10 16 12 75 75 40 ...100 (0/10) >40 (0/50) ASY59N TO1 io, 16 12 75 75 60... 150 (0/10) >60 (0/50) ASY63N_TO1 26 20 75 75 30... 120 (0.1/15) OC 41N TO1 16 12 50 75 75 20...90 (0/10) OC 42N TO1 16 12 50 75 75 > 40 (0/10) OC 44N TO1 15 12 10 75 75 40 ... 225 (6/1) = _ OC 45N TO1 15 12 10 | 75 75 25 ... 125 (6/1} Type Characteristics at Tamb= 25C VoE sat (e/lg) max \cBo (Veg) fr (Voelic) Cob (Vog) Vo (mAsmA) uA (V} MHz (V/mA) pF (Vv) ASY 26 <0.25 (50/2) 3 (5) >4 (5/3) <16 (5) ASY 27 <0.25 (50/1.25} 3 (5) >6 (5/3) <16 (5) ASY 54N 0.2 (100/6.6) 10 (20) 6 (4.5/1) 20 (4.5) ASY 55N 0.2 (100/3.8) 10 (20) 14. (4.5/1) 18 (4.5) ASY 56N 0.25 (50/2) 10 (16) >2 (0.5/10) <20 (6) ASY 5?7N 0.25 (50/1.67) 10 *(16) > 3.7 (0,5/10) <20 (6) ASY 58N 0.25 (50/1.25) 10 (46) >7__(0.5/10) __ <20 (6) _ ASY 59N 0.25 (50/0.825) 10 (16) >12 (0.5/10) 7 <20 (6) ASY 63N <0.1 (15/0.5) 4 (9) <17 (6) OC 41N <0.14 (10/0.6) 5 (6) >3 (6/1) <14 (6) OC 42N <0.14 (10/0.3) 5 (6) >5.5 (6/1) <14 (6) OC 44N 10 (15) >7.5 (6/1) < 13.5 (6) OC 45N a 10 (15) >3 (6/1) __ < 13.5 (6) Tamb7 25C Nig (F = 1kHz) 3 For Voce =0' read Voge =0' pe Tot vy 105 Tr aa8 1.68 be 6:00 4 1-93 Ib 38-10 G)< MIN, Til Mtn q t 21