AH125-89G - TriQuint - Datasheet.Directory

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 1 of 12 April 2010

AH125

½W High Linearity InGaP HBT Amplifier

Product Features

• 400 – 3600 MHz

• +28 dBm P1dB

• +45 dBm Output IP3

• 16.2 dB Gain @ 2140 MHz

• 150 mA current draw

• +5 V Single Supply

• MTTF > 100 Years

• Lead-free/Green/RoHS-compliant

SOT-89 Package

• Class 2 HBM ESD rating (>2kV)

Applications

• Repeaters

• Mobile Infrastructure

• LTE / WCDMA / EDGE / CDMA

Product Description

The AH125 is a high dynamic range driver amplifier in a

low-cost surface mount package. The InGaP/GaAs HBT is

able to achieve high performance across a broad range with

+45 dBm OIP3 and +28 dBm of compressed 1dB power

while drawing 150 mA current. The AH125 is available in

a lead-free/green/RoHS-compliant SOT-89 package. All

devices are 100% RF and DC tested.

The AH125 is targeted for use as a driver amplifier in

wireless infrastructure where high linearity, medium power,

and high efficiency are required. Internal biasing allows

the AH125 to maintain high linearity over temperature and

operate directly off a single +5V supply. This combination

makes the device an excellent candidate for transceiver line

cards in current and next generation multi-carrier 3G base

stations or repeaters.

Functional Diagram

RF IN GND RF OUT

GND

1 23

4

Function Pin No.

RF Input 1

RF Output / Vcc 3

Ground 2, 4

Specifications

Parameter Units Min Typ Max

Operational Bandwidth MHz 400 3600

Test Frequency MHz 2140

Gain dB 14 16.2 18

Input Return Loss dB 12

Output Return Loss dB 12

W-CDMA Channel Power(2)

@

-50 dBc ACLR dBm +19

Output P1dB dBm +28

Output IP3(3) dBm +41 +45

Noise Figure dB 4.4

Quiescent Collector Current mA 130 150 170

Device Voltage V +5

1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.

2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

3. OIP3 is measured with two tones separated by 1 MHz. The suppression on the largest IM3 product

is used to calculate the OIP3 using a 2:1 rule. Measured at 17dBm/tone for 900 MHz, 14 dBm/tone

for 1960 MHz, and 12 dBm/tone for 2140 MHz.

Absolute Maximum Rating

Parameter Rating

Storage Temperature -65 to +150 °C

RF Input Power, CW, 50 Ω, T=25°C Input P10dB

Device Voltage +6 V

Max Junction Temperature, TJ

For 106 hours MTTF 200 °C

Thermal Resistance, ΘJC 64.3 °C / W

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance

Parameter Units Typical

Frequency MHz 920 1960 2140

Gain dB 20 17 16.2

Input Return Loss dB 20 16 12

Output Return Loss dB 9.9 9 12

W-CDMA Channel Power(2)

@

-50 dBc ACLR dBm +19 +19 +19

Output P1dB dBm +28.1 +27.8 +28.0

Output IP3 (3) dBm +47 +47 +45

Noise Figure dB 7.7 4.6 4.4

Quiescent Collector Current mA 150

Device Voltage V +5

Ordering Information

Part No. Description

AH125-89G ½W High Linearity InGaP HBT Amplifier

AH125-89PCB900 900 MHz Evaluation Board

AH125-89PCB1960 1960 MHz Evaluation Board

AH125-89PCB2140 2140 MHz Evaluation Board

AH125-89PCB2600 2600 MHz Evaluation Board

Standard T/R size = 1000 pieces on a 7” reel.

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 2 of 12 April 2010

AH125

½W High Linearity InGaP HBT Amplifier

Typical Device Data

S-Parameters (VDevice = +5 V, ICC = 150 mA, 25 °C, unmatched 50 ohm system)

Notes:

The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that

actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.

S-Parameters (VDevice = +5 V, ICC = 150 mA, 25 °C, unmatched 50 ohm system, calibrated to device leads)

Freq (MHz) S11 (dB ) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)

100 -2.51 176.96 19.12 153.71 -33.85 -7.98 -4.58 -168.55

300 -6.65 -179.55 16.82 171.45 -41.51 -51.50 -3.50 167.66

500 -0.47 -166.72 19.86 129.11 -32.54 37.90 -6.46 -173.90

700 -0.50 179.58 16.95 110.14 -32.11 15.12 -4.57 -177.11

900 -0.56 173.91 15.09 99.64 -32.29 6.66 -4.14 177.58

1100 -0.65 170.52 13.68 91.32 -32.15 2.53 -3.89 173.40

1300 -0.78 166.87 12.37 83.49 -32.04 -2.50 -3.71 169.83

1500 -0.82 163.90 11.21 76.80 -32.11 -4.03 -3.64 167.10

1700 -0.93 161.34 10.11 71.12 -31.97 -7.89 -3.70 164.08

1900 -0.93 157.61 9.40 64.93 -31.94 -9.93 -3.64 160.19

2100 -0.94 154.21 8.47 58.83 -31.97 -10.87 -3.54 156.60

2300 -0.91 151.59 7.66 53.42 -31.80 -14.20 -3.48 153.92

2500 -0.93 149.24 7.06 49.26 -32.04 -16.18 -3.67 152.18

2700 -0.90 145.94 6.70 43.87 -31.63 -16.91 -3.72 147.67

2900 -0.96 143.87 6.12 39.45 -31.18 -18.50 -3.54 143.63

3100 -1.07 139.90 5.74 34.00 -31.37 -23.47 -3.52 141.32

3300 -1.18 136.50 5.09 29.36 -31.25 -20.88 -3.70 140.24

3500 -1.18 133.80 4.62 24.20 -31.12 -27.12 -3.72 135.07

3700 -1.11 132.39 4.12 20.26 -31.25 -26.33 -3.64 130.47

Device S-parameters are available for download off of the website at: http://www.tqs.com

Application Circuit PCB Layout

Circuit Board Material: .062” total thickness with a .014” FR4 top RF layer, 4 layers (other layers

added for rigidity), 1 oz copper, εr = 4.3, Microstrip line details: width = .031”, spacing = .035”

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 3 of 12 April 2010

AH125

½W High Linearity InGaP HBT Amplifier

700-800 MHz Reference Design

802.16-2004 O-FDMA, 64QA M-1/2, 1024-FFT, 20 sy mbols and 30 subchannels, 5 MH z Carrier B W

Typical O-FDMA Performance at 25°C

Frequency 700 750 800 MHz

Gain 20.4 20.3 20.1 dB

Input Return Loss 12 17 25 dB

Output Return Loss 7.5 6.8 6.3 dB

EVM

Pout=+18 dBm 0.9 0.7 0.7 %

ACLR

Pout=+18 dBm -52.6 -56 -54.4 dBc

Output P1dB +28.9 +29.4 +29.2 dBm

Output IP3

Pout=+18 dBm/tone, 1MHz spacing +43.7 +46.2 +45.5 dBm

Quiescent Current, Icq 150 mA

Vcc +5

V



Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of C11 is placed at 40 mil from AH125 RFout pin. (1.7o @ 750 MHz)

5. The edge of R3 is placed at 210 mil from the edge of C11. (8.7o @ 750 MHz)

6. The edge of C9 is placed next to the edge of R3.

7. The edge of R1 is placed at 100 mil from AH125 RFin pin. (4.2o @ 750 MHz)

8. The edge of C10 is placed 250 mil from the edge of R1. (10.4o @ 750 MHz)

17

18

19

20

21

22

700 720 740 760 780 800

Gain (dB )

Frequency (MHz)

Gain vs . Frequency

-30

-25

-20

-15

-10

-5

0

700 720 740 760 780 800

Retur n L o ss (dB )

Frequency (MHz)

Return Loss

S11 S22

30

35

40

45

50

10 12 14 16 18 20

OIP3 (dBm)

Output Powe r/T one (dBm)

OIP3 vs. Output Power/Tone

700 MHz 750 MHz 800 MHz

0

1

2

3

4

5

15 16 17 18 19 20 21 22

EVM (%)

Output Power (dBm)

EVM vs. Output Power

700 MHz 750 MH z 800 MHz

802.16-2004 O-FDMA, 64QAM-

1/2, 1024-FFT, 20 symbols and 30

subchannels, 5 MHz Carrier BW

-65

-60

-55

-50

-45

-40

15 16 17 18 19 20

ACLR (dBc)

Output Powe r (dBm )

ACLR vs. Output Power

700 MHz 750 MHz 800 MHz

W-CDMA 3GPP Test Model 1+64 DPCH

PAR = 9. 7 d B @ 0.01% Probability

3.84 MHz BW

Note: For improved output return loss, ≥10dB, please contact TriQuint applications support for a reference design employing feedback. Corresponding OIP3

performance will be ~+43dBm.

T

LEAD

=+25°C T

LEAD

=+25°C T

LEAD

=+25°C

T

LEAD

=+25°C T

LEAD

=+25°C

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 4 of 12 April 2010

AH125

½W Hi

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InGaP HBT Am

p

lifier

C4

C2R2

R4

L1

R1

C1

C9

C10

C8

C9

C10

869-960 MHz Reference Design (AH125-89PCB900)

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

Typical W-CDMA Performance at 25°C

Frequency 869 920 960 MHz

Gain 20 20 20 dB

Input Return Loss 14 20 22 dB

Output Return Loss 10 9.9 9.9 dB

ACLR

Pout=+18 dBm -52 -52.5 -52 dBc

Output P1dB +27.4 +28.1 +27.9 dBm

Output IP3

Pout=+17dBm/tone, 1MHz spacing +44 +47 +49 dBm

Noise Figure 7.9 7.7 7.5 dB

Quiescent Current, Icq 150 mA

Vcc +5 V

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of R2 is placed at 280 mil from AH125 RFout pin. (14.3o @ 920 MHz)

5. The edge of C9 is placed 35 mil from the edge of R2. (1.8o @ 920 MHz)

6. The edge of R1 is placed at 100 mil from AH125 RFin pin. (5.1o @ 920 MHz)

7. The edge of C10 is placed 130 mil from the edge of R1. (6.6o @ 920 MHz)

18

19

20

21

22

840 860 880 900 920 940 960 980

|S21| ( dB)

Frequency (MHz)

Gain v s . Freque nc y

-40°C +25°C +85°C

-25

-20

-15

-10

-5

0

840 860 880 900 920 940 960 980

|S11 | (d B)

Frequency (MHz)

Input Return Loss vs. Frequency

-40°C +25°C +85°C

-25

-20

-15

-10

-5

0

840 860 880 900 920 940 960 980

|S22| ( dB)

Frequency

(MHz)

Output Return Loss vs. Frequency

-40°C +25°C +85°C

18

19

20

21

22

-40 -15 10 35 60 85

|S21| (dB)

Temperature

(°C)

Gain vs. T emperature

869 MHz 920 MHz 960 MHz

-70

-65

-60

-55

-50

-45

-40

14 15 16 17 18 19 20

ACLR (dBc)

Output Power

(dBm)

ACLR vs. Output Power over Frequency

869 MHz 920 MHz 960 MHz

W-CDMA 3GPP Test Model 1+64 DPCH

PAR = 10.2 dB @ 0.01% Proba bility

3.84 MHz BW

-70

-65

-60

-55

-50

-45

-40

14 15 16 17 18 19 20

ACLR (dBc)

Output Power

(dBm)

ACLR vs. Ou tp u t Power over Temperatu re

-40°C +25°C +85°C

W-CDMA 3GPP Test Model 1+64 DPCH

PAR = 10.2 dB @ 0.01% Probability

3.84 MHz BW

Freq.=920 M Hz

35

40

45

50

55

10 11 12 13 14 15 16 17 18

OIP3 (dBm)

Output Power per Tone (dBm)

OIP3 vs. Pout/Tone over Temperature

-40°C +25°C +85°C

Freq.=920 MHz

1 MHz tone s pacing

35

40

45

50

55

10 11 12 13 14 15 16 17 18

OIP3 (dBm)

Output P ower per T one

(dBm)

OIP3 vs. Pout/Tone over Frequency

869 MHz 920 MHz 960 MHz

35

40

45

50

55

860 880 900 920 940 960

OIP3 (dBm)

Frequency (MHz)

OIP3 vs. Frequency

-40°C +25°C +85°C

1 MHz tone s pacing

Pout= + 17dB m per tone

T

LEAD

=+25°C

TLEAD=+25°C

1 MHz tone spacing

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 5 of 12 April 2010

AH125

½W Hi

g

h Linearit

y

InGaP HBT Am

p

lifier

869-960 MHz Reference Design (AH125-89PCB900)

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

130

140

150

160

170

180

10 12 14 16 18 20 22

Icq (mA)

Output Powe r (dBm)

Current vs. Output Power

869 MHz 920 MHz 960 MHz

24

25

26

27

28

29

30

860 880 900 920 940 960

P1dB (dBm)

Frequency (MHz)

P1dB vs. Frequency

-40°C +25°C +85°C

18

20

22

24

26

28

30

0123456789

Output P ower (dBm)

Input Power (dBm)

Output Power vs. Input Power

869 MHz 920 MHz 960 MHz

6.0

7.0

8.0

9.0

10.0

860 880 900 920 940 960 980 1000

NF (dB)

Frequency (MHz)

Noise Fig u re vs. F req uen cy

-40°C +25°C +85°C

T

LEAD

=+25°C T

LEAD

=+25°C

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 6 of 12 April 2010

AH125

½W Hi

g

h Linearit

y

InGaP HBT Am

p

lifier

1805-1880 MHz Reference Design

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW

Typical W-CDMA Performance at 25°C

Frequency 1805 1842 1880 MHz

Gain 17.8 18.2 18.1 dB

Input Return Loss 9.5 16.5 17.0 dB

Output Return Loss 9.4 8.4 7.8 dB

ACLR

Pout=+18 dBm -51 -51 -49 dBc

Output P1dB +28 +27.9 +27.8 dBm

Output IP3

Pout=+14dBm/tone, 1MHz spacing +44 +45 +43.5 dBm

Quiescent Current, Icq 150 mA

Vcc +5

V

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of C9 is placed at 250 mil from AH125 RFout pin. (25.5 o @ 1845 MHz)

5. The edge of R1 is placed against the edge of C10.

6. The edge of C10 is placed at 30 mil from AH125 RFin pin. (3.1 o @ 1845 MHz)

15

16

17

18

19

20

1800 1820 1840 1860 1880 1900

|S21| (d B )

Frequency

(MHz)

Gain vs . Frequency

-30

-25

-20

-15

-10

-5

0

1.80 1.82 1.84 1.86 1.88 1.90

Return Loss (dB)

Frequency

(MHz)

Return Loss vs. Frequency

S11 S22

-65

-60

-55

-50

-45

-40

11 12 13 14 15 16 17 18 19 20 21

ACLR (dBc)

Output Power (dBm)

ACLR vs. Output Power

1805 MHz 1842 MHz 1880 MHz

W-CDMA 3GPP TM +64DPCH

PAR=1 0.2dB @ 0.01% probability

3.84 MHz BW

38

40

42

44

46

48

8 1012141618

OIP3 (dBm)

Output Power/T one (dBm)

OIP3 vs. Output Power per Tone

1805 MHz 1842 MHz 1880 MHz 24

25

26

27

28

29

30

1820 1830 1840 1850 1860 1870 1880

P1dB (dBm)

Frequency (MHz)

P1dB vs. Frequency

2.4 pF

1.1 pF

0

TLEAD=+25°C

1 MHz tone spacing

T

LEAD

=+25°C T

LEAD

=+25°C

T

LEAD

=+25°C

T

LEAD

=+25°C

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 7 of 12 April 2010

AH125

½W Hi

g

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y

InGaP HBT Am

p

lifier

C3

C4

C2R2

R4

L1

R1

C1

C9

C10

C8

C9

C10

R20

C20

1930-1990 MHz Reference Design (AH125-89PCB1960)

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

Typical W-CDMA Performance at 25°C

Frequency 1930 1960 1990 MHz

Gain 17 17 17 dB

Input Return Loss 12 16 23 dB

Output Return Loss 10 9 8 dB

ACLR

Pout=+18 dBm -53 -53 -53 dBc

Output P1dB +27.8 +27.8 +27.7 dBm

Output IP3

Pout=+14dBm/tone, 1MHz spacing +45 +47 +47 dBm

Noise Figure 4.5 4.6 4.6 dB

Quiescent Current, Icq 150 mA

Vcc +5 V

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of C9 is placed at 215 mil from AH125 RFout pin. (23.3 o @ 1960 MHz)

5. The edge of R1 is placed against the edge of C10.

6. The edge of C10 is placed at 80 mil from AH125 RFin pin. (8.7 o @ 1960 MHz)

14

15

16

17

18

19

1.90 1.92 1.94 1.96 1.98 2.00

|S21| (dB)

Frequency

(GHz)

Gain vs. Frequency

-40°C +25°C +85°C

-30

-25

-20

-15

-10

-5

0

1.90 1.92 1.94 1.96 1.98 2.00

|S 11 | ( dB )

Frequency (GHz)

Input Return Loss vs. Frequency

-40°C +25°C +85°C

-30

-25

-20

-15

-10

-5

0

1.90 1.92 1.94 1.96 1.98 2.00

|S22| (d B )

Frequency

(GHz)

Output Return Loss vs. Frequency

-40°C +25°C +85°C

-65

-60

-55

-50

-45

-40

-35

12 14 16 18 20 22

ACLR (dBc)

Output Power

(dBm)

ACLR vs. Output Power

1930 MHz 1960 M Hz 1960 MHz

W‐CDMA3GPPTestModel1+64DPCH

PAR=10.3dB@0.01%Probability

3.84MHzBW

35

40

45

50

55

10 11 12 13 14 15 16 17 18

OIP3 (dBm)

Output Powe r

(dBm)

OIP3 vs. Output Powe r/Tone

1930 MH z 1960 MHz 1990 MHz

35

40

45

50

55

1.93 1.94 1.95 1.96 1.97 1.98 1.99

OIP3 (dBm)

Frequenc y (GHz)

OIP3 vs. Frequency

24

25

26

27

28

29

30

1.93 1.94 1.95 1.96 1.97 1.98 1.99

P1dB (dBm)

Frequenc y (GHz)

P1dB vs. Frequency

100

120

140

160

180

200

10 12 14 16 18 20 22

Icq (mA)

Output Power

(dBm)

Current vs. Output Power

4.75 V 5.00 V 5.25 V

2.0

3.0

4.0

5.0

6.0

1.90 1.92 1.94 1.96 1.98 2.00

NF (dB)

Frequency (GHz)

Noise Figure vs. Frequency

-40°C +25°C +85°C

TLEAD=+25°C

1 MHz tone spacing

T

LEAD

=+25°C TLEAD=+25°C

1 MHz tone spacing

Pout/tone

=+

14 dBm

T

LEAD

=+25°C T

LEAD

=+25°C

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 8 of 12 April 2010

AH125

½W Hi

g

h Linearit

y

InGaP HBT Am

p

lifier

2010-2025 MHz Reference Design

TD-SCDMA 3 Carrier, PAR = 10 dB @ 0.01% Probability, 1.28 MHz BW

Typical TD-SCDMA Performance at 25°C

Frequency 2010 2015 2025 MHz

Gain 16.3 16.3 16.4 dB

Input Return Loss 12.6 13.1 14.4 dB

Output Return Loss 8.2 8.1 7.9 dB

ACLR

Pout=+16 dBm -49.5 -50 -50.1 dBc

Output P1dB +28 +28.3 +28 dBm

Output IP3

Pout=+10 dBm/tone, 1MHz spacing +45 +45 +45 dBm

Quiescent Current, Icq 150 mA

Vcc +5

V

C3

C4

C2R2

R4

L1

R1

C1

C9

C10

C8

C9

C10

C20

R20

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of C9 is placed at 120 mil from AH125 RFout pin. (13.4o @ 2015 MHz)

5. The edge of C2 is placed 275 mil from the edge of C9. (30.7o @ 2015 MHz)

6. The edge of C10 is placed at 60 mil from AH125 RFin pin. (6.7o @ 2015 MHz)

7. The edge of R1 is placed next to the edge of C10.

14

15

16

17

18

19

2010 2015 2020 2025 2030

Gain (dB )

Frequency (MHz)

Gain v s. Frequency

-25

-20

-15

-10

-5

0

2010 2015 2020 2025 2030

Return L oss (dB)

Frequency (MHz)

Return Loss

S11 S22

-65

-60

-55

-50

-45

-40

-35

10 12 14 16 18 20

ACLR (dBc)

Output Power (dBm)

ACLR vs. Ou tput Average Power

2010 MHz 2015 MHz 2025 MHz

30

35

40

45

50

9 1011121314151617

OIP3 ( dBm )

Output Power /T one (dBm)

OIP3 vs. Output Power per Tone

2010 MHz 2015 MHz 2.7 GHz

140

160

180

200

220

240

260

280

300

320

10 12 14 16 18 20 22 24 26 28 30

Collector Current (mA)

Output Power (dBm)

Collector Current vs Outp ut Power

20

22

24

26

28

30

32

4 6 8 10 12 14 16

Output Power (dBm)

Input Power (dBm)

Output Power vs. Input Power

P1dB=+28.3 dBm

TLEAD=+25°C

1 MHz tone spacing

T

LEAD

=+25°C T

LEAD

=+25°C T

LEAD

=+25°C

T

LEAD

=+25°C T

LEAD

=+25°C

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 9 of 12 April 2010

AH125

½W High Linearity InGaP HBT Amplifier

C3

C4

C2R2

R4

L1

R1

C1

C9

C10

C8

C9

C10

2110-2170 MHz Reference Design (AH125-89PCB2140)

W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW

Typical W-CDMA Performance at 25°C

Frequency 2110 2140 2170 MHz

Gain 16.1 16.2 16.3 dB

Input Return Loss 10 12 15 dB

Output Return Loss 13 12 11 dB

ACLR

Pout=+18 dBm -52 -52 -52 dBc

Output P1dB +28 +28 +28 dBm

Output IP3

Pout=+12 dBm/tone, 1MHz spacing +49 +45 +47 dBm

Noise Figure 4.3 4.4 4.4 dB

Quiescent Current, Icq 150 mA

Vcc +5 V

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of C9 is placed at 120 mils from AH125 RFout pin. (14.2 o @ 2140 MHz)

5. The edge of C2 is placed at 280 mils from the edge of C9. (33.2 o @ 2140 MHz)

6. The edge of C10 is placed at 60 mils from AH125 RFin pin. (7.1 o @ 2140 MHz)

7. The edge of R1 is placed 10 mils from the edge of C10. (1.2 o @ 2140 MHz)

14

15

16

17

18

2.10 2.12 2.14 2.16 2.18 2.20

|S21| (dB)

Frequency

(GHz)

Gain vs. Frequency

-40°C +25°C +85°C

-25

-20

-15

-10

-5

0

2.10 2.12 2.14 2.16 2.18 2.20

|S 11 | ( d B)

Frequency

(GHz)

Input Return Loss

-40°C +25°C +85°C

-25

-20

-15

-10

-5

0

2.10 2.12 2.14 2.16 2.18 2.20

|S 22| (dB )

Frequency

(GHz)

Output Return Loss

-40°C +25°C +85°C

14

15

16

17

18

-40 -15 10 35 60 85

|S21| (dB)

Temperature (°C)

Gain vs. T emperature

2110 MHz 2140 MHz 2170 MHz

-65

-60

-55

-50

-45

-40

10 12 14 16 18 20

ACLR (dBc)

Output Powe r (dBm )

ACLR vs. Output Power

2110 MHz 2140 MHz 2170 MHz

W-CDMA 3GPP Test Model 1+64 DPCH

PAR = 10.3 dB @ 0.01% Probability

3.84 MHz BW

-65

-60

-55

-50

-45

-40

10 12 14 16 18 20

ACLR (dBc)

Output Powe r (dBm )

ACLR vs. Out put Power

-40°C +25°C +85°C

W-CDMA 3GPP Test Model 1+64 DPCH

PAR = 10.3 dB @ 0.01% Probability

3.84 MHz BW

35

40

45

50

55

8 9 10 11 12 13 14 15 16 17 18

OIP3 (dBm)

Pout/Tone (dBm)

OIP3 vs. Output Power/Tone

2110 MHz 2140 MHz 2170 MHz

24

25

26

27

28

29

30

2.11 2.12 2.13 2.14 2.15 2.16 2.17

P1dB (dBm)

Frequency (GHz)

P1dB vs. Frequency

0

1

2

3

4

5

6

7

8

2.10 2.12 2.14 2.16 2.18 2.20

NF (dB)

Frequency (GHz)

Noise Fi gure vs. Frequency

-40°C +25°C +85°C

T

LEAD

=+25°C

TLEAD=+25°C

1 MHz tone spacing T

LEAD

=+25°C

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 10 of 12 April 2010

Application Note

½W High Linearity InGaP HBT Amplifier

2.5-2.7 GHz Reference Design

802.16-2004 O-FDMA, 64QA M-1/2, 1024-FFT, 20 sy mbols and 30 subchannels, 5 MH z Carrier B W

Typical Performance at 25°C

Frequency (GHz) 2.5 2.6 2.7 Units

Gain 13.9 14.0 13.7 dB

Input Return Loss 9.5 13.1 12.9 dB

Output Return Loss 9.4 8.7 8.2 dB

EVM

Pout=+19 dBm 1.5 1.25 1.3 %

Output P1dB +28 +28 +28 dBm

Output IP3

Pout=+16 dBm/tone, 1MHz spacing +49 +48 +47 dBm

Quiescent Current, Icq 150 mA

Vcc +5

V

Notes:

9. The primary RF microstrip line is 50 Ω.

10. Components shown on the silkscreen but not on the schematic are not used.

11. 0 Ω jumpers can be replaced with copper trace in target application.

12. Distance from side edge of C10 to side edge of U1 pin 1 is 55 mils (7.9°@2600 MHz).

13. Distance from end edge of R1 to side edge of U1 pin 1 is 110 mils (15.8°@2600 MHz)..

14. Distance from side edge of C9 to side edge of U1 pin 3 is 90 mils (13.0°@2600 MHz)..

10

11

12

13

14

15

2.40 2.50 2.60 2.70 2.80

Gain (dB)

Frequency (GHz)

Gain vs. Frequency

-20

-15

-10

-5

0

2.40 2.50 2.60 2.70 2.80

Return Lo ss (dB )

Frequency (GHz)

Return Loss vs. Frequency

S11 S22

0

1

2

3

4

5

12 14 16 18 20 22

EVM (%)

Output Power (dBm)

EVM vs. O ut pu t Pow er

2.5 GHz 2.6 GHz 2.7 GHz

802.16-2004 O-F DMA, 64QAM-1/2

1024-FFT, 20 symb o l s and 30 subchannels

5 MHz Carrier BW

-65

-60

-55

-50

-45

-40

-35

12 14 16 18 20 22

ACLR (dBc)

Output Power (dBm)

ACLR vs. Output Power

2.5 GHz 2.6 GHz 2.7 GHz

W-CDMA 3GPP Test Model 1+64 DPCH

PAR = 10.2 dB @ 0.01% Probabilit y

3.84 MHz BW

30

35

40

45

50

55

10 12 14 16 18 20 22

OIP3 (dBm)

Output Power/Tone (dBm)

OIP3 vs. Output Power/Tone

2.5 GHz 2.6 GHz 2.7 GHz



1

2

3



U1

R1

C1 R2 C2

C3

R4

C10

C9

L1

C4

C8

Circuit Board Material: 0.014” FR4, single layer, 1 oz copper, εr = 4.3,

Microstrip line details: width = .031”, spacing = .035”

T

LEAD

=+25°C T

LEAD

=+25°C

T

LEAD

=+25°C T

LEAD

=+25°C

J1 J2

C1

RF Input RF Output

R1 R2 R1

Z= 50 Ohm

L=55 mils Z= 50 Ohm

L=55 mils

1pF 0 O hms 22pF

0 Ohm s C10

0.8pF C9

0.6pF

U1

AH125-89PCB2600

1

2

3

Z= 50 Ohm

L=90 mils

R4

VCC

L1

0 Ohm s

C8

1uF

C4

1000pF

18nH

0805CS

C3

22pF

TLEAD=+25°C

1 MHz tone spacing

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 11 of 12 April 2010

Application Note

½W High Linearity InGaP HBT Amplifier

3.4-3.6 GHz Reference Design

802.16-2004 O-FDMA, 64QA M-1/2, 1024-FFT, 20 sy mbols and 30 subchannels, 5 MH z Carrier B W

Typical O-FDMA Performance at 25°C

Frequency 3.4 3.5 3.6 GHz

Gain 11.5 12.1 12 dB

Input Return Loss 8 15 21 dB

Output Return Loss 16 13 11 dB

EVM

Pout=+18 dBm 1.1 1.0 1.1 %

Output P1dB +27 +27.3 +27.5 dBm

Output IP3

Pout=+16 dBm/tone, 1MHz spacing +49.5 +45.7 45.2 dBm

Quiescent Current, Icq 150 mA

Vcc +5

V

C3

C4

C2R2

R4

L1

R1

C1

C9

C10

C8

C9

C10

Circuit Board Material: 0.014” FR4, single layer, 1 oz copper, εr = 4.3,

Microstrip line details: width = .031”, spacing = .035”

Notes:

1. The primary RF microstrip line is 50 Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. 0 Ω jumpers can be replaced with copper trace in target application.

4. The edge of C9 is placed at 60 mil from AH125 RFout pin. (11.6o @ 3.5 GHz)

5. The edge of C10 is placed at 45 mil from AH125 RFin pin. (8.7o @ 3.5 GHz)

6. The edge of L2 is placed next to the edge of C10.

8

9

10

11

12

13

3.30 3.40 3.50 3.60 3.70

Gain (d B)

Freque ncy (GHz)

Gain vs . Frequency

-30

-25

-20

-15

-10

-5

0

3.30 3.40 3.50 3.60 3.70

Return L oss (dB)

Frequency (GHz)

Return Loss vs. Frequency

S11 S22

0

1

2

3

4

5

10 12 14 16 18 20 22

EVM (%)

Output Power (dBm)

EVM vs. Ou tp u t Powe r

3.4 GHz 3.5 GHz 3.6 GHz

802.16-2004 O-FDMA, 64QAM-

1/2, 1024-FFT, 20 symbols and 30

subchannels, 5 MHz Carrier BW

140

150

160

170

180

190

10 12 14 16 18 20 22

Collector Current (mA)

Output Powe r (dBm)

Current vs Output Power

3.4 GHz 3.5 GHz 3.6 GHz

0

5

10

15

20

10 12 14 16 18 20 22

Collector Efficiency (%)

Output Power (dBm)

Efficiency vs Outp ut Power

3.4 GHz 3.5 GHz 3.6 GHz

35

40

45

50

55

12 14 16 18 20

OIP3 ( dBm )

Output Power /T one (dBm)

OIP3 v s. Output Powe r/Tone

3.4 GHz 3.5 GHz 3.6 GHz

Note: This reference design was constructed on FR4 to illustrate potential AH125 performance in the 3.4-3.6 GHz frequency range. For customer applications

of AH125 at these frequencies, we recommend the use of more suitable materials such as Rogers 3000 series.

T

LEAD

=+25°C T

LEAD

=+25°C T

LEAD

=+25°C

T

LEAD

=+25°C T

LEAD

=+25°C TLEAD=+25°C

1 MHz tone spacing

Specifications and information are subject to change without notice

TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: ww w.TriQuint.com Page 12 of 12 April 2010

AH125

½W Hi

g

h Linearit

y

InGaP HBT Am

p

lifier

Mechanical Information

This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded

(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.

Outline Drawing

Land Pattern

Product Marking

The AH125 will be marked with an

“AH125G” designator with a lot code marked

below the part designator. The “Y” represents

the last digit of the year the part was

manufactured, the “XXX” is an auto-

generated number, and “Z” refers to a wafer

number in a batch.

MSL / ESD Rating

ESD Rating: Class 2

Value: Passes 2000V to <4000V

Test: Human Body Model (HBM)

Standard: JEDEC Standard JESD22-A114

ESD Rating: Class IV

Value: Passes ≥ 2000V min.

Test: Charged Device Model (CDM)

Standard: JEDEC Standard JESD22-C101

MSL Rating: Level 3 at +260 °C convection reflow

Standard: JEDEC Standard J-STD-020

Mounting Config. Notes

1. Ground / thermal vias are critical for the proper performance of

this device. Vias should use a .35mm (#80 / .0135”) diameter

drill and have a final plated thru diameter of .25 mm (.010”).

2. Add as much copper as possible to inner and outer layers near

the part to ensure optimal thermal performance.

3. Mounting screws can be added near the part to fasten the board

to a heatsink. Ensure that the ground / thermal via region

contacts the heatsink.

4. Do not put solder mask on the backside of the PC board in the

region where the board contacts the heatsink.

5. RF trace width depends upon the PC board material and

construction.

6. Use 1 oz. Copper minimum.

7. All dimensions are in millimeters (inches). Angles are in

degrees.

YXXX-Z

AH125G