© 1997 IXYS All rights reserved
TO-264 AA
GCE
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Symbol Test Conditions Maximum Ratings
VCES TJ= 25 °C to 150°C 600 V
VCGR TJ= 25 °C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25 °C, limited by leads 75 A
IC90 TC= 90 °C50A
I
CM TC= 25 °C, 1 ms 200 A
SSOA VGE= 15 V, T VJ = 125°C, RG = 10 Ω ICM = 100 A
(RBSOA) Clamped inductive load, L = 30 µH @ 0.8 VCES
PCTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (M4) 0.9/6 Nm/lb.in.
Weight 10 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
HiPerFASTTM IXGK 50N60AU1 VCES = 600 V
IGBT with Diode IC25 = 75 A
VCE(sat) = 2.7 V
Combi Pack tfi = 275 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 500 µA, VGE = 0 V 600 V
VGE(th) IC= 500 µA, VCE = VGE 2.5 5.5 V
ICES VCE = 0.8 • VCES TJ = 25°C 250 µA
VGE = 0 V TJ = 125°C15mA
I
GES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 2. 7 V
Features
lInternational standard package
JEDEC TO-264 AA
lHigh frequency IGBT and anti-
parallel FRED in one package
l2nd generation HDMOSTM process
lLow VCE(sat)
- for minimum on-state conduction
losses
lMOS Gate turn-on
- drive simplicity
lFast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Applications
lAC motor speed control
lDC servo and robot drives
lDC choppers
lUninterruptible power supplies (UPS)
lSwitch-mode and resonant-mode
power supplies
Advantages
lSpace savings (two devices in one
package)
lEasy to mount with 1 screw
(isolated mounting screw hole)
lReduces assembly time and cost
lHigh power density
92821G (3/97)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK 50N60AU1
TO-264 AA Outline
Inductive load, T J = 25°°
°°
°C
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 2.7 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 25 35 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Qg200 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 50 nC
Qgc 80 nC
td(on) 50 ns
tri 210 ns
td(off) 200 ns
tfi 275 400 ns
Eoff 4.8 mJ
td(on) 50 ns
tri 240 ns
Eon 3mJ
t
d(off) 280 ns
tfi 600 ns
Eoff 9.6 mJ
RthJC 0.42 K/W
RthCK 0.15 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IC90, VGE = 0 V, 1 . 7 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRM IF = IC90, VGE = 0 V, -diF/dt = 480 A/µs1933A
t
rr VR = 360 V TJ =125°C 175 ns
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ =25°C35 50ns
R
thJC 0.75 K/W
Inductive load, TJ = 125°°
°°
°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 2.7 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
© 1997 IXYS All rights reserved
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV / VCE(sat) - No rm aliz ed
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VGE - Volts
012345678910
I
C
- Amperes
0
10
20
30
40
50
60
70
80
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
VCE(sat) - Normalized
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
VGE - Volts
4 5 6 7 8 9 10 11 12 13 14 15
VCE - Volts
0
1
2
3
4
5
6
7
8
9
10
VCE - Volts
02468101214161820
I
C
- Amperes
0
50
100
150
200
250
300
350
5V
7V
9V
11V
13V
VCE - Volts
012345
I
C
- Amperes
0
10
20
30
40
50
60
70
80 VGE = 15V
IC = 40A
IC = 20A
IC = 80A
IC = 40A
IC = 20A
TJ = 125°C
TJ = 25°C
VGE(th) @ 250µA
VCE = 100V
BVCES @ 3mA
TJ = 25°C
TJ = 25°C TJ = 25°C
VGE = 15V
13V
11V
9V
7V
5V
Fig. 3 Collector-Emitter Voltage Fig. 4 Temperature Dependence
vs. Gate-Emitter Voltage of Output Saturation Voltage
Fig. 5 Input Admittance Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
Fig. 1 Saturation Characteristics Fig. 2 Output Characterstics
IXGK 50N60AU1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK 50N60AU1
VCE - Volts
0 5 10 15 20 25
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Cies
Cres
Coes
VCE - Volts
0 100 200 300 400 500 600 700
IC - A mp eres
0.01
0.1
1
10
100
TJ = 125°C
dV/dt < 3V/ns
Total Gate Ch arge - (nC )
0 50 100 150 200 250
VGE - Volts
0
3
6
9
12
15
Pulse Width - seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
ZthJC (K/W)
0.001
0.01
0.1
1
D = Duty Cycle
Single Pulse
D=0.5
D=0.2
IC = 40A
VCE = 500V
D=0.1
D=0.05
D=0.02
D=0.01
Fig.10 Transient Thermal Impedance
Fig.9 Capacitance Curves
Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area
= IXGK 50N60AU1
© 1997 IXYS All rights reserved
IXGK 50N60AU1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK 50N60AU1
