Product Bulletin JANTX, JANTXV, 2N4854U September 1996 (SP, OPTEK Surface Mount NPN/PNP Complementary Transistors Type JANTX, JANTXV, 2N4854U 080 (2.03) .250 (6.35) . -240 .10)| 058 (1.47) | NTIFIER 175 175 (4.45) 45) 165 165 (4.19) 19) 4 | .028 (0.71) .022 (0.56) D Os MZ ae .055 (1.40) .045 (1.14) rT .105 (2. 105 (2.87) s_ | .095 1085 (2.41) 41) 098 (2.49) 070 (1.78) 082 (2.08) | 060 (1. 3) DIMENSIONS ARE IN INCHES (MILLIMETERS) COLLECTOR COLLECTOR * Uk EMITTER GASE BASE EMITTER Features e Ceramic surface mount package e Miniature package to minimize circuit Absolute Maximum Ratings (Ta = 25 C unless otherwise noted) NPN to PNP Isolation Voltage... 0... . ce cee eens Collector-Base Voltage... 2.0... ke cc tne e een eeees 60 V board area required Collector-Emitter Voltage 2.0... cece eee ene nn eees 40V e Hermetically sealed Emitter-Base Voltage ee enw eee eee tee ear aw renee serene 5.0V e Per MIL-PRF-19500/421 Collector Current-Continuous .......0.0. 00. c ccc cece teens 600 mA Operating Junction Temperature (Ty) ......00. 0.00 cee ee ee ee -65 C to +200 C Description Storage Junction Temperature (Tstg)... 6.0.02. e cece cece eens -65 C to +200 C : : Power Dissipation @ Ta = 25 C (both transistors driven equally) ........... 0.6 W The JANTX2N4854U is a hermetically Power Dissipation @ Tc = 25 C (both transistors driven equally) ......... 2.0 w") Sealed, ceramic surrace moun Soldering Temperature (vapor phase reflow for 30 sec.) ...........2-505- 215C SANTXONA8S4U consists ef an NPN Soldering Temperature (heated Collet for 5 sec.) .........2 00202 e eee eee 260 C transistor die and PNP transistor die Notes: 0 : : . (1) Derate linearly 3.4 mW C above 25 C. This surface mount package is the most recent addition to MIL-PRF-19500/421. The U designator denotes the 6 terminal (C-6) leadless chip carrier package option. The miniature six pin ceramic package is ideal for designs where board space and device weight are important design considerations. Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is Vcp = 30 V, Pp = 300 mW each transistor Ta = 25 C. Refer to MIL-PRF-19500/421 for complete requirements. When ordering parts without processing, do not use a JAN prefix. Optek Technology, Inc. 1215 W. Crosby Road = Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 15-12 ,Types JANTX, JANTXV, 2N4854U Electrical Characteristics (Ta = 25 C unless otherwise noted) See Note 3 SYMBOL | PARAMETER | min [MAX | UNIT | TEST CONDITIONS Off Characteristics ViprycBo |Collector-Base Breakdown Voltage 60 Vs jle = 10.0 pA, le = 0 Vieryceo |Collector-Emitter Breakdown Voltage 40 VV jIlc = 10.0 mA, Ig = 0 Vier)eBO | Emitter-Base Breakdown Voltage 5.0 V {le = 10.0 pA, Ic = 0 IcBo Collector-Base Cutoff Current 10.0 nA |Vcp=50V, le =0 10.0 nA |VcB=50 V, le =0, Ta = 150C lEBO Emitter-Base Cutoff Current 10.0} nA /|Vep=3.0V,Ic=0 On Characteristics NFE DC Current Transfer Ratio 50 - Vce = 1 V, Ic = 150 ma) 35 - Voce = 10.0 V, Ic = 0.1 mA 50 - Vce = 10.0 V, lo =1.0mA 75 - |Vce= 10.0 V, Io = 10 mA 100 | 300} - |Vce=10.0V, Ic = 150 mA 35 - |Vce = 10.0 V, ic = 300 ma 12 - |Vce = 10.0 V, Ic = 10 mA, Ta = -55 C?) Vcesat) |Collector-Emitter Saturation Voltage 0.40 Vs |Il = 150 mA, Ip = 15 mA?) VBE(sAT) |Base-Emitter Saturation Voltage 0.8 Vic = 150 mA, Ip = 15 mA) Small-Signal Characteristics hie Small Signal Common Emitter Input 1.5 9 kQ Impedance Noe Small Signal Common Emitter Output 50 | umho |VcE = 10 V, Ic = 1.0 mA, f = 1.0 kHz Admittance hfe Small Signal Current Transfer Ratio 60 | 300 - NF Noise Figure 8 db |f = 1.0 kHz, Re = 1.0 kQ, Ic = 0.1 mA, Vce = 10 V Ihtel Small Signal Current Transfer Ratio 2.0 8.0 - Voce = 20 V, Ic = 20 mA, f = 100 MHz Cobo Output Capacitance 8.0 PF iVcp = 10 V, 100 kHz