LM136-2.5-N
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SNVS749F –MAY 1998–REVISED APRIL 2013
LM136-2.5-N, LM236-2.5-N, LM336-2.5-NV Reference Diode
Check for Samples: LM136-2.5-N
1FEATURES The LM136-2.5-N series is useful as a precision 2.5V
2• Low Temperature Coefficient low voltage reference for digital voltmeters, power
• Wide Operating Current of 400 μA to 10 mA supplies or op amp circuitry. The 2.5V make it
• 0.2ΩDynamic Impedance convenient to obtain a stable reference from 5V logic
supplies. Further, since the LM136-2.5-N operates as
• ±1% Initial Tolerance Available a shunt regulator, it can be used as either a positive
• Specified Temperature Stability or negative voltage reference.
• Easily Trimmed for Minimum Temperature Drift The LM136-2.5-N is rated for operation over −55°C to
• Fast Turn-On +125°C while the LM236-2.5-N is rated over a −25°C
to +85°C temperature range.
DESCRIPTION The LM336-2.5-N is rated for operation over a 0°C to
The LM136-2.5-N/LM236-2.5-N and LM336-2.5-N +70°C temperature range. See the connection
integrated circuits are precision 2.5V shunt regulator diagrams for available packages.
diodes. These monolithic IC voltage references
operate as a low-temperature-coefficient 2.5V zener
with 0.2Ωdynamic impedance. A third terminal on the
LM136-2.5-N allows the reference voltage and
temperature coefficient to be trimmed easily.
Connection Diagram
TO-92 Plastic Package TO Metal Can Package
Figure 1. Bottom View Figure 2. Bottom View
See Package Number LP See Package Number NDV
SOIC Package
Figure 3. Top View
See Package Number D
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 1998–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM136-2.5-N
SNVS749F –MAY 1998–REVISED APRIL 2013
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Typical Applications
Figure 4. 2.5V Reference
†Adjust to 2.490V
*Any silicon signal diode
Figure 5. 2.5V Reference with Minimum Temperature Coefficient
Figure 6. Wide Input Range Reference
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SNVS749F –MAY 1998–REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)
Reverse Current 15 mA
Forward Current 10 mA
Storage Temperature −60°C to +150°C
Operating Temperature Range(3) LM136 −55°C to +150°C
LM236 −25°C to +85°C
LM336 0°C to +70°C
Soldering Information TO-92 Package (10 sec.) 260°C
TO Package (10 sec.) 300°C
SOIC Package Vapor Phase (60 sec.) 215°C
Infrared (15 sec.) 220°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified operating conditions.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) For elevated temperature operation, Tjmax is:
LM136 150°C
LM236 125°C
LM336 100°C
Thermal Resistance TO-92 TO SOIC
θja (Junction to Ambient) 180°C/W (0.4″leads) 440°C/W 165°C/W
170°C/W (0.125″lead)
θja (Junction to Case) n/a 80°C/W n/a
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Electrical Characteristics (1)
Parameter Conditions LM136A-2.5-N/ LM336B-2.5-N Units
LM236A-2.5-N LM336-2.5-N
LM136-2.5-N/
LM236-2.5-N
Min Typ Max Min Typ Max
Reverse TA=25°C, IR=1 mA LM136, LM236, LM336 2.440 2.490 2.540 2.390 2.490 2.590 V
Breakdown Voltage LM136A, LM236A, LM336B 2.465 2.490 2.515 2.440 2.490 2.540 V
Reverse TA=25°C, 2.6 6 2.6 10 mV
Breakdown 400 μA≤IR≤10 mA
Change With
Current
Reverse Dynamic TA=25°C, IR=1 mA, f = 100 Hz 0.2 0.6 0.2 1 Ω
Impedance
Temperature VRAdjusted to 2.490V 0°C≤TA≤70°C (LM336) 1.8 6 mV
Stability(2) IR=1 mAFigure 15 −25°C≤TA≤+85°C 3.5 9 mV
(LM236H, LM236Z)
−25°C ≤TA≤+85°C 7.5 18 mV
(LM236M)
−55°C≤TA≤+125°C (LM136) 12 18 mV
Reverse 400 μA≤IR≤10 mA 3 10 3 12 mV
Breakdown
Change With
Current
Reverse Dynamic IR=1 mA 0.4 1 0.4 1.4 Ω
Impedance
Long Term Stability TA=25°C ±0.1°C, IR=1 mA, 20 20 ppm
t = 1000 hrs
(1) Unless otherwise specified, the LM136-2.5-N is specified from −55°C ≤TA≤+125°C, the LM236-2.5-N from −25°C ≤TA≤+85°C and
the LM336-2.5-N from 0°C ≤TA≤+70°C.
(2) Temperature stability for the LM336 and LM236 family is specified by design. Design limits are ensured (but not 100% production
tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. Stability
is defined as the maximum change in Vref from 25°C to TA(min) or TA(max).
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Typical Performance Characteristics
Reverse Voltage Change Zener Noise Voltage
Figure 7. Figure 8.
Dynamic Impedance Response Time
Figure 9. Figure 10.
Reverse Characteristics Forward Characteristics
Figure 11. Figure 12.
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Typical Performance Characteristics (continued)
Temperature Drift
Figure 13.
APPLICATION HINTS
The LM136 series voltage references are much easier to use than ordinary zener diodes. Their low impedance
and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or
the temperature coefficient can be adjusted to optimize circuit performance.
Figure 14 shows an LM136 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the
addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device.
The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer
circuitry.
If minimum temperature coefficient is desired, two diodes can be added in series with the adjustment
potentiometer as shown in Figure 15. When the device is adjusted to 2.490V the temperature coefficient is
minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457.
For proper temperature compensation the diodes should be in the same thermal environment as the LM136. It is
usually sufficient to mount the diodes near the LM136 on the printed circuit board. The absolute resistance of R1
is not critical and any value from 2k to 20k will work.
Figure 14. LM136 With Pot for Adjustment of Figure 15. Temperature Coefficient Adjustment
Breakdown Voltage (Trim Range = ±70 mV typical)
(Trim Range = ±120 mV typical)
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*L1 60 turns #16 wire on Arnold Core A-254168-2
†Efficiency ≈80%
Figure 16. Low Cost 2 Amp Switching Regulator†
Figure 17. Precision Power Regulator with Low Temperature Coefficient
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Figure 18. 5V Crowbar
*Does not affect temperature coefficient
Figure 19. Trimmed 2.5V Reference with Temperature Coefficient Independent of Breakdown Voltage
Figure 20. Adjustable Shunt Regulator
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SNVS749F –MAY 1998–REVISED APRIL 2013
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REVISION HISTORY
Changes from Revision E (April 2013) to Revision F Page
• Changed layout of National Data Sheet to TI format .......................................................................................................... 11
12 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated
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PACKAGE OPTION ADDENDUM
www.ti.com 17-Dec-2014
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM136AH-2.5 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -40 to 125 ( LM136AH2.5 ~
LM136AH2.5)
LM136AH-2.5/NOPB ACTIVE TO NDV 3 1000 Green (RoHS
& no Sb/Br) Call TI Level-1-NA-UNLIM -40 to 125 ( LM136AH2.5 ~
LM136AH2.5)
LM136H-2.5 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -55 to 125 ( LM136H2.5 ~
LM136H2.5)
LM136H-2.5/NOPB ACTIVE TO NDV 3 1000 Green (RoHS
& no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 ( LM136H2.5 ~
LM136H2.5)
LM236H-2.5 ACTIVE TO NDV 3 1000 TBD Call TI Call TI -25 to 85 ( LM236H2.5 ~
LM236H2.5)
LM236H-2.5/NOPB ACTIVE TO NDV 3 1000 Green (RoHS
& no Sb/Br) Call TI Level-1-NA-UNLIM -25 to 85 ( LM236H2.5 ~
LM236H2.5)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
PACKAGE OPTION ADDENDUM
www.ti.com 17-Dec-2014
Addendum-Page 2
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
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continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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MECHANICAL DATA
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