1. Product profile
1.1 General description
Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
nSmall and flat lead SMD plastic package
nReverse voltage: VR≤200 V
1.3 Applications
nGeneral-purpose switching
1.4 Quick reference data
[1] Pulse test: tp≤300 µs; δ≤0.02.
[2] When switched from IF= 30 mA to IR= 30 mA; RL= 100 Ω; measured at IR= 3 mA.
BAS21H
Single high-voltage switching diode
Rev. 02 — 3 November Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IFforward current [1] - - 200 mA
VRreverse voltage - - 200 V
trr reverse recovery time [2] --50ns
BAS21H_2 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 3 November 2 of 10
NXP Semiconductors BAS21H
Single high-voltage switching diode
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
Table 2. Pinning
Pin Description Simplified outline Symbol
1 cathode [1]
2 anode 21
sym001
12
Table 3. Ordering information
Type number Package
Name Description Version
BAS21H - plastic surface-mounted package; 2 leads SOD123F
Table 4. Marking codes
Type number Marking code
BAS21H B2
BAS21H_2 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 3 November 3 of 10
NXP Semiconductors BAS21H
Single high-voltage switching diode
5. Limiting values
[1] Pulse test: tp≤300 µs; δ≤0.02.
[2] Tj=25°C prior to surge.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point of cathode tab.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse
voltage - 250 V
VRreverse voltage - 200 V
IFforward current [1] - 200 mA
IFRM repetitive peak forward
current tp= 1 ms;
δ= 0.25 - 625 mA
IFSM non-repetitive peak forward
current square wave [2]
tp=1µs-9A
tp= 100 µs-3A
tp=10ms - 1.7 A
Ptot total power dissipation Tamb ≤25 °C[3] - 375 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2] - - 330 K/W
Rth(j-sp) thermal resistance from
junction to solder point [3] - - 70 K/W
BAS21H_2 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 3 November 4 of 10
NXP Semiconductors BAS21H
Single high-voltage switching diode
7. Characteristics
[1] Pulse test: tp≤300 µs; δ≤0.02.
[2] When switched from IF= 30 mA to IR= 30 mA; RL= 100 Ω; measured at IR= 3 mA.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage IF= 100 mA [1] --1V
IF= 200 mA [1] - - 1.25 V
IRreverse current VR= 200 V - - 100 nA
VR= 200 V; Tj= 150 °C - - 100 µA
Cddiode capacitance VR=0V; f=1MHz - - 5 pF
trr reverse recovery time [2] - - 50 ns
BAS21H_2 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 3 November 5 of 10
NXP Semiconductors BAS21H
Single high-voltage switching diode
(1) Tamb = 150 °C; typical values
(2) Tamb =25°C; typical values
(3) Tamb =25°C; maximum values
Based on square wave currents.
Tj=25°C; prior to surge
Fig 1. Forward current as a function of forward
voltage Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
(1) VR=V
Rmax; maximum values
(2) VR=V
Rmax; typical values f = 1 MHz; Tamb =25°C
Fig 3. Reverse current as a function of junction
temperature Fig 4. Diode capacitance as a function of reverse
voltage; typical values
600
IF
(mA)
0
200
400
mbg384
021VF (V)
(1) (3)(2)
mbg703
10
1
102
IFSM
(A)
10−1
tp (µs)
110
4
103
10 102
mbg381
200
0 100 Tj (°C)
10
IR
(µA)
1
10−2
102
10−1
(1) (2)
mbg447
04862 VR (V)
1.0
0.8
0.2
0.6
0.4
Cd
(pF)
BAS21H_2 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 3 November 6 of 10
NXP Semiconductors BAS21H
Single high-voltage switching diode
8. Test information
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 15.
(1) IR=3mA
Fig 5. Reverse recovery time test circuit and waveforms
trr
(1)
+ IFt
output signal
trtpt
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50 ΩIF
D.U.T.
Ri = 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
Fig 6. Package outline SOD123F
04-11-29Dimensions in mm
1.2
1.0
0.25
0.10
3.6
3.4 2.7
2.5
0.55
0.35
0.70
0.55
1.7
1.5
1
2
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
BAS21H SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
BAS21H_2 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 3 November 7 of 10
NXP Semiconductors BAS21H
Single high-voltage switching diode
11. Soldering
12. Mounting
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 7. Reflow soldering footprint SOD123F
1.6
1.6
2.9
4
4.4
1.1 1.22.1
1.1
(2×)
solder lands
solder resist
occupied area
solder paste
PCB thickness = 1.6 mm
Fig 8. FR4 PCB, standard footprint SOD123F
006aaa670
40
1.2
1.2
0.5
1.2
43.4
1.2
Dimensions in mm
BAS21H_2 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 3 November 8 of 10
NXP Semiconductors BAS21H
Single high-voltage switching diode
13. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAS21H_2 20061103 Product data sheet - BAS21H_1
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Section 1.1 “General description”: amended
•Table 1 “Quick reference data”: IF forward current table note added
•Table 5 “Limiting values”: IF forward current table note added
•Table 5 “Limiting values”: IFRM repetitive peak forward current condition amended
•Table 5 “Limiting values”: IFSM non-repetitive peak forward current condition amended
•Table 6: Rth(j-sp) thermal resistance from junction to solder point table note added
•Table 7 “Characteristics”: VF forward voltage unit amended
•Figure 2: figure title and figure note amended
•Figure 3: amended
•Section 12 “Mounting”: added
•Section 14.4 “Trademarks”: added
BAS21H_1 20050411 Product data sheet - -
BAS21H_2 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 3 November 9 of 10
NXP Semiconductors BAS21H
Single high-voltage switching diode
14. Legal information
14.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BAS21H
Single high-voltage switching diode
© NXP B.V. 2006. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 November
Document identifier: BAS21H_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 6
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
15 Contact information. . . . . . . . . . . . . . . . . . . . . . 9
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
