Features
l
High UV sensitivity: QE 75 % (λ=200 nm)
l
Suppressed IR sensitivity
l
Low dark current
l
High reliability
Applications
l
Analytical equipment
l
Optical measurement equipment, etc.
PHOTODIODE
Si photodiode
For UV to visible, precision photometry; suppressed IR sensitivity
S1226 series
■ General ratings / absolute maximum ratings
Absolute maximum ratings
Package Active
area size
Effective
active area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material * (mm) (mm) (mm2) (V) (°C) (°C)
S1226-18BQ ➀/Q -20 to +60 -55 to +80
S1226-18BK ➀/K TO-18 1.1 × 1.1 1.2 -40 to +100 -55 to +125
S1226-5BQ ➁/Q -20 to +60 -55 to +80
S1226-5BK ➁/K 2.4 × 2.4 5.7 -40 to +100 -55 to +125
S1226-44BQ ➁/Q -20 to +60 -55 to +80
S1226-44BK ➁/K
TO-5
3.6 × 3.6 13 -40 to +100 -55 to +125
S1226-8BQ ➂/Q -20 to +60 -55 to +80
S1226-8BK ➂/K TO-8 5.8 × 5.8 33
5
-40 to +100 -55 to +125
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100 lx
Spectral
response
range
λ
Peak
sensi-
tivity
wave-
length
λpλp200 nm He-Ne
laser Min. Typ.
Dark
current
ID
V
R
=10 mV
Max.
Temp.
coeffi-
cient
of ID
TCID
Rise time
tr
VR=0 V
RL=1 kΩ
Terminal
capaci-
tance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Type No.
(nm) (nm) Min. Typ. 633 nm (µA) (µA) (pA)
(times/° C)
(µs) (pF)
Min.
(G
Ω
)
Typ.
(G
Ω
)
(W/Hz1/2)
S1226-18BQ
190 to 1000
0.10 0.12
S1226-18BK
320 to 1000
-- 0.5 0.66 2 0.15 35 5 50 1.6 × 10-15
S1226-5BQ
190 to 1000
0.10 0.12
S1226-5BK
320 to 1000
-- 2.2 2.9 5 0.5 160 2 20 2.5 × 10-15
S1226-44BQ
190 to 1000
0.10 0.12
S1226-44BK
320 to 1000
-- 4.4 5.9 10 1 380 1 10 3.6 × 10-15
S1226-8BQ
190 to 1000
0.10 0.12
S1226-8BK
320 to 1000
720 0.36
--
0.34
12 16 20
1.12
2 950 0.5 5 5.0 × 10-15
* Window material, K: borosilicate glass, Q: quartz glass
Si photodiode
S1226 series
RISE TIME
LOAD RESISTANCE (Ω)
(Typ. Ta=25 ˚C, V
R
=0 V)
10
2
10 ns 10
3
10
4
10
5
S1226-18BQ/BK
S1226-5BQ/BK
S1226-8BQ/BK
S1226-44BQ/BK
100 ns
1 µs
10 µs
100 µs
1 ms
■ Spectral response ■ Photo sensitivity temperature characteristic
KSPDB0106EA KSPDB0030EA
■ Rise time vs. load resistance ■ Dark current vs. reverse voltage
KSPDB0107EA KSPDB0108EA
0.1
0
PHOTO SENSITIVITY (A/W)
190 400 600 800 1000
WAVELENGTH (nm)
0.3
0.2
(Typ. Ta =25 ˚C)
0.4
0.5
0.6
0.7
S1226-BQ
S1226-BK
TEMPERATURE COEFFICIENT (%/˚C)
WAVELENGTH (nm)
(Typ. )
0
190 400 600 800 1000
+1.0
+0.5
+1.5
-0.5
DARK CURRENT
REVERSE VOLTAGE (V)
(Typ. Ta=25 ˚C)
0.01
100 fA
0.1 1 10
1 pA
10 pA
100 pA
1 nA
10 nA
S1226-8BQ/BK
S1226-5BQ/BK, -18BQ/BK
S1226-44BQ/BK
Si photodiode
S1226 series
■ Shunt resistance vs. ambient temperature
KSPDB0109EA
SHUNT RESISTANCE
AMBIENT TEMPERATURE (˚C)
(Typ. V
R
=10 mV)
-200 20406080
10 kΩ
100 kΩ
1 MΩ
10 MΩ
100 MΩ
1 GΩ
10 GΩ
100 GΩ
1 TΩ
S1226-18BQ/BK, -5BQ/BK
S1226-44BQ/BK
S1226-8BQ/BK
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
Si photodiode
S1226 series
Cat. No. KSPD1034E03
Oct. 2002 DN
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.
15 5.0 ± 0.2
1.9
0.45
LEAD
12.35 ± 0.1
13.9 ± 0.2
7.5 ± 0.2
WINDOW
10.5 ± 0.1
PHOTOSENSITIVE
SURFACE
MARK ( 1.4)
CONNECTED TO CASE
KSPDA0115EA
PHOTOSENSITIVE
SURFACE
14
2.4
3.6 ± 0.2
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
CONNECTED TO CASE
WINDOW
3.0 ± 0.2
0.45
LEAD
20 4.1 ± 0.2
2.9
0.45
LEAD
8.1 ± 0.1
WINDOW
5.9 ± 0.1
PHOTOSENSITIVE
SURFACE
9.1 ± 0.2
5.08 ± 0.2
CONNECTED TO CASE
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.
➂ S1226-8BQ/-8BK
KSPDA0113EB KSPDA0114EA
■ Dimensional outlines (unit: mm)
➀ S1226-18BQ/-18BK ➁ S1226-5BQ/K, S1226-44BQ/K
